FAST SWITCHING MOSFET Search Results
FAST SWITCHING MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| ICL7662MTV/B |
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ICL7662 - Switched Capacitor Converter, 10kHz Switching Freq-Max, CMOS |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| CA3130AT/B |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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FAST SWITCHING MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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70N03
Abstract: on 70n03 diode marking 33a on semiconductor diode marking 33A on 70N03 DATASHEET diode marking 33A marking 33a on semiconductor N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V AF70N03
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AF70N03 O-252 O-252 70N03 70N03 on 70n03 diode marking 33a on semiconductor diode marking 33A on 70N03 DATASHEET diode marking 33A marking 33a on semiconductor N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V AF70N03 | |
4835p
Abstract: 4835p mosfet 4835 mosfet mosfet 4835 4835P Datasheet AF4835P 4835 D 4835 aa RD
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AF4835P 015x45 4835p 4835p mosfet 4835 mosfet mosfet 4835 4835P Datasheet AF4835P 4835 D 4835 aa RD | |
9503PContextual Info: AF9503P P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-Resistance - Fast Switching Performance - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, rugged |
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AF9503P 015x45 9503P | |
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Contextual Info: AF9515P P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-Resistance - Fast Switching Performance - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, rugged |
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AF9515P 015x45 | |
85n08Contextual Info: AF85N08 N-Channel Enhancement Mode Power MOSFET Features General Description - Low Gate Charge - Simple Drive Requirement - Fast Switching - RoHS Compliant - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, |
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AF85N08 O-263 O-220) O-220 85n08 | |
AF4971
Abstract: 4971N
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AF4971N 4971N information33 AF4971 | |
4953p
Abstract: max5390 mosfet 4953
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AF4953P 4953p max5390 mosfet 4953 | |
4835p mosfet
Abstract: 4835P 4835 so-8
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AF4835P 4835P 4835p mosfet 4835 so-8 | |
60n03
Abstract: 60N03 mosfet 60N03 m N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET 60N03 AF60N03 510 MOSFET 60N03 to TO-252 N-channel MOSFET IDA45
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AF60N03 O-252 O-252 60N03 60n03 60N03 mosfet 60N03 m N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET 60N03 AF60N03 510 MOSFET 60N03 to TO-252 N-channel MOSFET IDA45 | |
A1 SOT323 MOSFET P-CHANNEL
Abstract: marking G SOT323 Transistor SOT323 MOSFET P 12V P-Channel Power MOSFET AF1333P
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AF1333P OT323) -550mA 1333P OT323 A1 SOT323 MOSFET P-CHANNEL marking G SOT323 Transistor SOT323 MOSFET P 12V P-Channel Power MOSFET AF1333P | |
MOSfet 4362
Abstract: 4362n N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET SO-8 AF4362N
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AF4362N MOSfet 4362 4362n N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET SO-8 AF4362N | |
AA MARKING CODE SO8Contextual Info: AF4811P P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and |
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AF4811P 4811P AA MARKING CODE SO8 | |
AA MARKING CODE SO8Contextual Info: AF9410N N-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and |
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AF9410N 9410N AA MARKING CODE SO8 | |
4825p
Abstract: 4825p 8 pin mosfet pin voltage 4825p mosfet 4835 so-8 mosfet 4835 D mosfet 4825p AF4825P AA MARKING CODE SO8 4835 mosfet
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AF4825P 4825P 4825p 8 pin mosfet pin voltage 4825p mosfet 4835 so-8 mosfet 4835 D mosfet 4825p AF4825P AA MARKING CODE SO8 4835 mosfet | |
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9435 so8
Abstract: MOSFET code 9435 9435 mosfet 9435p 9435 so package
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AF9435P 9435P 9435 so8 MOSFET code 9435 9435 mosfet 9435 so package | |
AF8958C
Abstract: P-Channel MOSFET code L 1A P-Channel MOSFET code 1A N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N and P MOSFET
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AF8958C AF8958C P-Channel MOSFET code L 1A P-Channel MOSFET code 1A N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N and P MOSFET | |
SSM9475MContextual Info: SSM9475M N-channel Enhancement-mode Power MOSFET D Simple drive requirement BVDSS 60V Lower gate charge R DS ON 40mΩ ID 6.9A G Fast switching characteristics S DESCRIPTION D D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, |
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SSM9475M SSM9475M | |
ssm20p02jContextual Info: SSM20P02H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement D 2.5V gate drive capability Fast switching BV DSS -20V R DS ON 52mΩ ID G -18A S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, |
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SSM20P02H O-252 SSM20P02J) O-251 ssm20p02j | |
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Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET |
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BYC10-600 O220AC) BYC10-600 | |
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Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC5B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET |
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BYC5B-600 OT404 BYC5B-600 OT404 | |
ultraFast Recovery Bridge Rectifier
Abstract: BYC10-600 BYC10B-600 BYV79E
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BYC10B-600 OT404 BYC10B-600 OT404 ultraFast Recovery Bridge Rectifier BYC10-600 BYV79E | |
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Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC8B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET |
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BYC8B-600 OT404 BYC8B-600 OT404 | |
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Contextual Info: SSM0903GMA N-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Simple drive requirement Lower gate charge SS Fast switching characteristics SG BV DSS 30V R DS ON 9mΩ ID 60A ESO-8 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, |
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SSM0903GMA SSM0903GMA | |
ssm9987gh
Abstract: SSM99
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SSM9987GH O-252 SSM9987GH) O-251 ssm9987gh SSM99 | |