FAST SWITCHING MOSFET Search Results

MOSfet 4362

Abstract: 4362n N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET SO-8 AF4362N
Contextual Info: AF4362N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

4825p

Abstract: 4825p 8 pin mosfet pin voltage 4825p mosfet 4835 so-8 mosfet 4835 D mosfet 4825p AF4825P AA MARKING CODE SO8 4835 mosfet
Contextual Info: AF4825P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

4407p

Abstract: AF4407
Contextual Info: AF4407P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

ultraFast Recovery Bridge Rectifier

Abstract: BYC10-600 BYC10B-600 BYV79E
Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC8B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

Contextual Info: SSM0903GMA N-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Simple drive requirement Lower gate charge SS Fast switching characteristics SG BV DSS 30V R DS ON 9mΩ ID 60A ESO-8 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

Contextual Info: SSM1203GMA N-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Simple drive requirement Lower gate charge SS Fast switching characteristics BV DSS 30V R DS ON 12mΩ 45A ID SG ESO-8 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

Contextual Info: SSM0603GMA N-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Simple drive requirement Lower gate charge SS Fast switching characteristics SG BV DSS 30V R DS ON 6mΩ ID 75A ESO-8 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

AP60L02P

Contextual Info: AP60L02S/P Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 25V RDS ON 12mΩ ID G 50A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

Contextual Info: AP60T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 12mΩ ID G 45A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

AP12L02J

Contextual Info: AP12L02H/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 25V RDS ON 85mΩ ID G 12A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

ap60t03

Abstract: AP60T03AH AP60T03AJ
Contextual Info: AP60T03AH/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 12mΩ ID G 45A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

60V 60A TO-252 N-CHANNEL

Abstract: ap70t03aj
Contextual Info: AP70T03AH/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

AP50L02P

Contextual Info: AP50L02S/P Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 25V RDS ON 17mΩ ID G 40A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

fast recovery diode 54

Abstract: BYC10-600CT BYC5-600 BYV29
Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

Contextual Info: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

Contextual Info: SSM4929M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low Gate Charge D2 D2 Simple Drive Requirement D1 D1 BV DSS 25V R DS ON 29mΩ ID Fast Switching 6.5A G2 S2 SO-8 G1 S1 Description D2 D1 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

ultrafast diode 10a 400v

Abstract: diode 500v 10A power diode 500v 10A diode 10a 400v DC DC converter 400V BYC10-600 ULTRAFAST 10A 600V mosfet 500v 10A half bridge converter Rectifier Diode 20A Vrrm 500V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC10-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE „ DESCRIPTION The UTC BYC10-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET.

MTP12P10

Abstract: AN569
Contextual Info: MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P–Channel TO–220 This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds – Switching Times Specified

240 AC to 12V AC transformer circuit diagram

Abstract: AC to DC smps circuit diagram M51977 M51995 circuit diagram of high power smps M51995AP SMPS CIRCUIT DIAGRAM USING TRANSISTORS M51995AFP ac dc m51995afp on line ups circuit diagrams
Contextual Info: MITSUBISHI Dig./Ana. INTERFACE M51995AP/FP SWITCHING REGULATOR CONTROL DESCRIPTION M51995A is the primary switching regulator controller which is especially designed to get the regulated DC voltage from AC power PIN CONFIGURATION (TOP VIEW) supply. This IC can directly drive the MOS-FET with fast rise and fast fall

M51996

Abstract: 220 ac voltage regulator without transformer circuit diagram of high power smps m51978 m51996afp schematic diagram 12v ac regulator m51978 on line ups circuit diagrams AC to DC smps circuit diagram Ic m51996 fly back transformer
Contextual Info: MITSUBISHI Dig./Ana. INTERFACE M51996AP/FP SWITCHING REGULATOR CONTROL DESCRIPTION M51996A is the primary switching regulator controller which is especially designed to get the regulated DC voltage from AC power PIN CONFIGURATION (TOP VIEW) supply. This IC can directly drive the MOS-FET with fast rise and fast fall

BYC8-600

Abstract: BYC8600
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC8-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE „ DESCRIPTION The UTC BYC8-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC8-600 is generally applied in continuous current

2PG001

Abstract: Panasonic IGBT TO220 2PG002 2PG003
Contextual Info: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These

FQP45N03L

Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves