FAST RECOVERY DIODE HITACHI Search Results
FAST RECOVERY DIODE HITACHI Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CS-USB2AMBMMC-001 |
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Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') | |||
CS-USB2AMBMMC-002 |
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Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') | |||
CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet |
FAST RECOVERY DIODE HITACHI Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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diode hitachi
Abstract: LS190N 1000-1 POWER MODULE
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SR2-SP-10001 MDM800H45E2-H diode hitachi LS190N 1000-1 POWER MODULE | |
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09005 R6 P1 MDM1200H45E2-H FEATURES Low Reverse Recovery Loss diode module. Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. |
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SR2-SP-09005 MDM1200H45E2-H | |
Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. |
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SR2-SP-10001 MDM800H45E2-H MDM800H45r | |
Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R2 P1 MDM800H45E2-H Target Specification FEATURES Low Reverse Recovery Loss diode module. Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. |
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SR2-SP-10001 MDM800H45E2-H | |
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09001 R1 P1 MDM800H45E2 Target Specification OUTLINE DRAWING FEATURES Low VF diode module. Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. |
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SR2-SP-09001 MDM800H45E2 MDM800E45E2 | |
Hitachi DSA00281
Abstract: MBN1200H45
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SR2-SP-09006 MDM1200H45E2 Hitachi DSA00281 MBN1200H45 | |
MBN1200H45E2-HContextual Info: DIODE MODULE Spec.No.SR2-SP-09006 R2 P1 MDM1200H45E2 FEATURES Low VF diode module. Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. Isolated heat sink terminal to base . |
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SR2-SP-09006 MDM1200H45E2 MBN1200H45E2-H | |
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09006 R1 P1 MDM1200H45E2 FEATURES ∗ Low VF diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . |
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SR2-SP-09006 MDM1200H45E2 | |
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R4 MDM750H65E2 FEATURES Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. Isolated heat sink terminal to base . |
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SR2-SP-09003 MDM750H65E2 | |
MDM80
Abstract: MDM800H45E2 Hitachi DSA00281
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-SP-09001 MDM800H45E2 MDM800E45E2 MDM80 MDM800H45E2 Hitachi DSA00281 | |
P4 diode
Abstract: MBN500H65E2 p5 diode
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SR2-SP-09007 MDM500H65E2 P4 diode MBN500H65E2 p5 diode | |
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R2 MDM750H65E2 TENTATIVE Datasheet FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . |
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SR2-SP-09003 MDM750H65E2 | |
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R3 MDM750H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . |
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SR2-SP-09003 MDM750H65E2 | |
MDM750H65E2
Abstract: 50uM
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SR2-SP-09003 MDM750H65E2 MDM750H65E2 50uM | |
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3AG1AContextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R2 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . |
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SR2-SP-09007 MDM500H65E2 3AG1A | |
MBN1200E33E
Abstract: gate turn-off igbt control
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MBN1200E33E 000cycles) MBN1200E33E gate turn-off igbt control | |
Contextual Info: FAST RECOVERY DIODE DFM1MF FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. ABSOLUTE MAXIMUM RATINGS Item Type DFM1MF2 Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F AV |
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Contextual Info: FAST RECOVERY DIODE DFM3MF FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. ABSOLUTE MAXIMUM RATINGS Item Type DFM3MF2 Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F AV |
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ic 7400
Abstract: MBB100A6 MBB50A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6
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OCR Scan |
MBM75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBB50A6 MBB75A6 MBB100A6 MBN200F12 MBN300F12 ic 7400 MBB100A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6 | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04023 R3 P1 MBN1800E17DD Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) |
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IGBT-SP-04023 MBN1800E17DD 000cycles) | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10002 R3 MBN1500E33E3 FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode. |
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IGBT-SP-10002 MBN1500E33E3 000cycles) | |
Measurement of stray inductance for IGBT
Abstract: Hitachi DSA00281
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IGBT-SP-04023 MBN1800E17DD 000cycles) Measurement of stray inductance for IGBT Hitachi DSA00281 | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04023 R3 P1 MBN1800E17DD Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) |
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IGBT-SP-04023 MBN1800E17DD 000cycles) | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08020 R4 MBM500E33E2 Preliminary Specification FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode. |
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IGBT-SP-08020 MBM500E33E2 000cycles) |