FAST RECOVERY Search Results
FAST RECOVERY Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54F253/B2A |
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54F253 - Multiplexer, F/FAST Series, 2-Func, 4 Line Input - Dual marked (M38510/33908B2A) |
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| 54F573FM/B |
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54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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| CLC400A/BPA |
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CLC400 - OP AMP, WIDEBAND, FAST SETTLING, CURRENT FEEDBACK - Dual marked (5962-8997001PA) |
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| 54F253/BFA |
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54F253 - Multiplexer, F/FAST Series, 2-Func, 4 Line Input - Dual marked (M38510/33908BFA) |
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| 54F573/BSA |
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54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, CDFP20 - Dual marked (M38510/34604BSA) |
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FAST RECOVERY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
7272
Abstract: CS641230
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CS641230 Amperes/1200 125oC 7272 CS641230 | |
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Contextual Info: Tem ic BYT87 TELEFUNKEN Semiconductors Ultra Fast Recovery Silicon Power Rectifier Features • • • • • • Multiple diffusion High voltage High current Glass passivated junction Ultra fast forward recovery time Ultra fast reverse recovery time Applications |
OCR Scan |
BYT87 | |
10a 400V ultra fast diode d2pak
Abstract: schottky diode 60V 80A diode schottky 600 volt smb diode trr 100ns sod-123 diode schottky 1000V 10a CMSH3-40 sod-123 trr 75ns cbrhdsh1-40l CMR3U-06 SOT923
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OD-123F OT-89 OT-223 CMMR1-02 CMR1-02M CMR1-02 CMR2-02 CMR3-02 CMMR1-04 CXR1-04 10a 400V ultra fast diode d2pak schottky diode 60V 80A diode schottky 600 volt smb diode trr 100ns sod-123 diode schottky 1000V 10a CMSH3-40 sod-123 trr 75ns cbrhdsh1-40l CMR3U-06 SOT923 | |
CS640525
Abstract: D-19 D-20 e 1220 diode
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CS640525 Amperes/500 CS640525 -200A/s, D-19 D-20 e 1220 diode | |
VSK.F180.P
Abstract: k20s TA7000
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E78996 2002/95/EC 11-Mar-11 VSK.F180.P k20s TA7000 | |
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Contextual Info: B U R R - B R O W N <i [ OPA689 ] Wideband, High Gain VOLTAGE LIMITING AMPLIFIER APPLICATIONS FEATURES • FAST RECOVERY FROM OVERDRIVE: 2.4ns TRANSIMPEDANCE WITH FAST OVERDRIVE RECOVERY • LIMITING VOLTAGE ACCURACY: ±15mV FAST LIMITING ADC INPUT DRIVER |
OCR Scan |
OPA689 280MHz OPA688 OPA689 | |
1F8A
Abstract: telefunken ta 250 telefunken ta 350 6 dip smps ic
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OCR Scan |
BYT08P/600A/800A 1F8A telefunken ta 250 telefunken ta 350 6 dip smps ic | |
IDT74FCT299
Abstract: IDT74FCT299A IDT74FCT299C
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IDT74FCT299 ID74FCT299A IDT74FCT299C IDT74FCT299/A/C IDT74FCT299A/C IDT74FCT299F P20-1) IDT74FCT299A | |
ysi4Contextual Info: TEMIC BYTI 15/200/400 T EL E FU N K E N Sem iconductors Ultra Fast Recovery Silicon Power Rectifier Features • M ultiple diffusion • Epitaxial - planar • Ultra fast forward recovery time • Ultra fast reverse recovery time • L ow reverse current • |
OCR Scan |
BYT115/200/400 ysi4 | |
6AI diodeContextual Info: International IS Rectifier 4Ö5545E Oülb?^ 32fl H I N R SERIES IRK.F152 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate |
OCR Scan |
5545E 4ASS452 10ohm 10ohms- 6AI diode | |
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Contextual Info: RM35HG-34S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode 35 Amperes/1700 Volts B F D A G - DIA. K L 2 1 H C J 3 Description: Powerex Super Fast Recovery Diodes are designed for use in applications requiring fast |
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RM35HG-34S Amperes/1700 300ns -500A/Â | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYV4100 Fast soft-recovery controlled avalanche rectifier Product specification 1996 Oct 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV4100 |
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M3D118 BYV4100 | |
BYD57M
Abstract: SOD87 marking
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M3D121 BYD57 135002/04/pp12 BYD57M SOD87 marking | |
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Contextual Info: FSM101 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FSM107 SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Fast switching Glass passivated device Ideal for surface mounted applications |
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FSM101 FSM107 FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 | |
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byg21mContextual Info: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time |
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BYG21K BYG21M DO-214AC J-STD-020, 2002/95/EC 2002/96/EC DO-21s 08-Apr-05 byg21m | |
SF101
Abstract: SF106
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SF101 SF106 DO-41 MIL-STD-750, SF106 | |
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Contextual Info: PR6001 - PR6005 6.0A FAST RECOVERY RECTIFIER Features Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 300A Peak Low Reverse Leakage Current Plastic Material: UL Flammability |
OCR Scan |
PR6001 PR6005 MIL-STD-202, | |
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Contextual Info: 1F1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1F7 FAST RECOVERY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Fast switching Low leakage Low forward voltage drop High current capability High currenf surge High reliability |
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MIL-STD-202E | |
BYD31
Abstract: BYD31D BYD31G BYD31J BYD31K BYD31M
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M3D122 BYD31 BYD31D BYD31G BYD31J BYD31K BYD31M | |
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Contextual Info: Temic Semiconductors Ultra-Fast Rectifiers - Soft Recovery 116 Issue: 11.96 |
OCR Scan |
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Contextual Info: 2NH45 SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : VRRf.j=1000V . Average Forward Current : If AV =2.0A . Very Fast Reverse-Recovery Time : trr=200ns(Max.) MAXIMUM RATINGS |
OCR Scan |
2NH45 200ns C60Hz) | |
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Contextual Info: 1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5NH41 SWITCHING MODE POWER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage: VRRM = 1000V • Average Forward Current: IF AV = 1.5A • Very Fast Reverse Recovery Time: trr = 400ns (Max) |
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1R5NH41 400ns | |
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Contextual Info: BYG21K, BYG21M www.vishay.com Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time |
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BYG21K, BYG21M J-STD-020, AEC-Q101 DO-214AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
018pFContextual Info: POWER GENERATION DIODES Step recovery diodes SRD STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: • very short pulse generation, • ultra fast waveform shaping, |
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EH541 DH541 DH542 DH543 DH544 DH545 DH546 018pF | |