FAST HIGH SIDE MOSFET DRIVER Search Results
FAST HIGH SIDE MOSFET DRIVER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| 54F573FM/B |
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54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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| 54F573/BSA |
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54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, CDFP20 - Dual marked (M38510/34604BSA) |
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| 54F373/BRA |
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54F373 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, CDIP20 - Dual marked (M38510/34601BRA) |
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FAST HIGH SIDE MOSFET DRIVER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MIC4100
Abstract: MIC4100BM MIC4101 MIC4101BM 74 Series Logic ICs gate diagrams 11uA input and output TTL converter
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MIC4100/1 MIC4100/1 MIC4100 MIC4101 MIC4100) MIC4101) M9999-102004 MIC4100BM MIC4101BM 74 Series Logic ICs gate diagrams 11uA input and output TTL converter | |
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Contextual Info: NJW4800 30V/4A Half Bridge Driver GENERAL DESCRIPTION PACKAGE OUTLINE The NJW4800 is a general purpose, half bridge power driver capable of supplying 4A current. The internal gate driver drives high-side/low-side power MOSFET; therefore, it has fast switching. |
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NJW4800 NJW4800 NJW4800GM1 | |
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Contextual Info: NJW4801 Small PKG Half Bridge Driver GENERAL DESCRIPTION PACKAGE OUTLINE The NJW4801 is a general purpose, half bridge power driver capable of supplying ±450mA current. The internal gate driver drives high-side/low-side power MOSFET, therefore, it has fast switching. |
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NJW4801 NJW4801 450mA NJW4801R 450mA 700kHz | |
NJW4801Contextual Info: NJW4801 Small PKG Half Bridge Driver • PACKAGE OUTLINE GENERAL DESCRIPTION The NJW4801 is a general purpose, half bridge power driver capable of supplying 450mA current. The internal gate driver drives high-side/low-side power MOSFET, therefore, it has fast switching. |
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NJW4801 NJW4801 450mA NJW4801R 450mA 700kHz | |
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Contextual Info: SC1302A/B/C Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description PRELIMINARY Features K +4.5V to +16.5V operation K Fast rise and fall times 20ns typical with 1000pf load K Dual MOSFET driver K 2A peak drive current K 40ns propagation delay |
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SC1302A/B/C SC1302A/B/C | |
12v dc to dual supply circuit diagrams
Abstract: land pattern for msOP 10 1600 v mosfet ina driver
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SC1302A/B/C SC1302A/B/C 12v dc to dual supply circuit diagrams land pattern for msOP 10 1600 v mosfet ina driver | |
7030BL
Abstract: 300 Volt mosfet schematic circuit 1205S 1N4148 LL42 SC1205 SC1205CS high speed mosfet driver Class-D DOUBLE FET
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SC1205 3000pf SC1205 3000pF 7030BL 300 Volt mosfet schematic circuit 1205S 1N4148 LL42 SC1205CS high speed mosfet driver Class-D DOUBLE FET | |
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Contextual Info: SC1302A/B/C/D/E/F Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features +4.5V to +16.5V operation Fast rise and fall times 20ns typical with 1000pf load Dual MOSFET driver 2A peak drive current 40ns propagation delay |
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SC1302A/B/C/D/E/F SC1302A/B/C SC1302A SC1302B SC1302C SC1302D/E/F SC1302A/ IPC-SM-782A, | |
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Contextual Info: SC1302A/B/C/D/E/F Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features +4.5V to +16.5V operation Fast rise and fall times 20ns typical with 1000pf load Dual MOSFET driver 2A peak drive current 40ns propagation delay |
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SC1302A/B/C/D/E/F SC1302A/B/C SC1302A SC1302B SC1302C SC1302D/E/F SC1302A/ MS-012, IPC-SM-782A, | |
SC1302E equivalentContextual Info: SC1302A/B/C/D/E/F Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features +4.5V to +16.5V operation Fast rise and fall times 20ns typical with 1000pf load Dual MOSFET driver 2A peak drive current 40ns propagation delay |
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SC1302A/B/C/D/E/F SC1302A/B/C SC1302A SC1302B SC1302C SC1302D/E/F SC1302A/ IPC-SM-782A, SC1302E equivalent | |
D8025
Abstract: SC1302A SC1302B SC1302C
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SC1302A/B/C/D/E/F 1000pf SC1302A/B/C/D/E/F MS-012, IPC-SM-782A, D8025 SC1302A SC1302B SC1302C | |
TR2015Contextual Info: SC1302A/B/C Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features u +4.5V to +16.5V operation u Fast rise and fall times 20ns typical with 1000pf load u Dual MOSFET driver u 2A peak drive current u 40ns propagation delay u 8-pin SOIC / MSOP packages |
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SC1302A/B/C 1000pf SC1302A/B/C TR2015 | |
LSI1013XT1GContextual Info: LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G P-Channel 1.8-V G-S MOSFET FEATURES TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns |
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LSI1013XT1G S-LSI1013XT1G AEC-Q101 SC-89 463C-01 463C-02. LSI1013XT1G | |
SC-89
Abstract: SC-75 SC-75A
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WTX1012 SC-89 SC-75A) 31-Mar-09 SC-89 50BSC SC-75 SC-75A | |
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110n2g
Abstract: t110n2 110N2 T110N2G 369D NTD110N02R NTD110N02RG NTD110N02RT4G
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NTD110N02R NTD110N02R/D 110n2g t110n2 110N2 T110N2G 369D NTD110N02R NTD110N02RG NTD110N02RT4G | |
MP2451DT
Abstract: Marking V7 MP2451
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MP2451 MP2451 MP245136V, OT23-6L MP2451DT Marking V7 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V G-S MOSFET LSI1013XT1G FEATURES D D D D D D TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns |
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LSI1013XT1G SC-89 463C-01 463C-02. | |
SXFB
Abstract: MARKING 09q k 246 transistor fet fdc6333 MUC10A marking SZDB ZXMP10 zxmp6A17 SS3H10-E3 ZXMP10A18KTC
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LM3409 LM3409N/ LM3409HV LM3409Q LM3409QHV LM3409HV/ LM3409QHV/ LM3409N SXFB MARKING 09q k 246 transistor fet fdc6333 MUC10A marking SZDB ZXMP10 zxmp6A17 SS3H10-E3 ZXMP10A18KTC | |
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Contextual Info: WTX1013 P-Channel 1.8-V G-S MOSFET P b Lead(Pb)-Free 3 FEATURES: 1 * TrenchFET@ Power MOSFET: 1.8-V Rated * Gate-Source ESD Protected: 2000V * High-Side Switching * Low On-Resistance: 1.2Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 14 ns * S-Prefix for Automotive and Other Applications Requiring |
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WTX1013 SC-89 06-Sep-2013 SC-89 50BSC | |
LSI1012XT1GContextual Info: LESHAN RADIO COMPANY, LTD. LSI1012XT1G S-LSI1012XT1G N-Channel 1.8-V G-S MOSFET FEATURES D D D D D D D TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns |
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LSI1012XT1G S-LSI1012XT1G AEC-Q101 SC-89 463C-01 463C-02. LSI1012XT1G | |
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Contextual Info: TPS2830, TPS2831 FAST SYNCHRONOUSĆBUCK MOSFET DRIVERS WITH DEADĆTIME CONTROL SLVS196C − JANUARY1999 − REVISED JANUARY 2001 D Floating Bootstrap or Ground-Reference D D D D D D D D D D D D PACKAGE TOP VIEW High-Side Driver Adaptive Dead-Time Control |
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TPS2830, TPS2831 SLVS196C JANUARY1999 50-ns 100-ns | |
LSI1012LT1GContextual Info: LESHAN RADIO COMPANY, LTD. LSI1012LT1G S-LSI1012LT1G N-Channel 1.8-V G-S MOSFET FEATURES D D D D D D D 3 TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns |
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LSI1012LT1G S-LSI1012LT1G AEC-Q101 OT-23 LSI1012LT1G | |
LSI1013LT1GContextual Info: LESHAN RADIO COMPANY, LTD. LSI1013LT1G S-LSI1013LT1G P-Channel 1.8-V G-S MOSFET FEATURES D D D D D D D 3 TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns |
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LSI1013LT1G S-LSI1013LT1G AEC-Q101 OT-23 LSI1013LT1G | |
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Contextual Info: TPS2830, TPS2831 FAST SYNCHRONOUSĆBUCK MOSFET DRIVERS WITH DEADĆTIME CONTROL SLVS196C − JANUARY1999 − REVISED JANUARY 2001 D Floating Bootstrap or Ground-Reference D D D D D D D D D D D D PACKAGE TOP VIEW High-Side Driver Adaptive Dead-Time Control |
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TPS2830, TPS2831 SLVS196C JANUARY1999 50-ns 100-ns | |