FAST HIGH SIDE MOSFET DRIVER Search Results

MIC4100

Abstract: MIC4100BM MIC4101 MIC4101BM 74 Series Logic ICs gate diagrams 11uA input and output TTL converter
Contextual Info: MIC4100/1 100V Half Bridge MOSFET Drivers PRELIMINARY SPECIFICATION General Description Features The MIC4100/1 are high frequency, 100V Half Bridge MOSFET driver ICs featuring fast 30ns propagation delay times. The low-side and high-side gate drivers are independently controlled and matched to within 3ns

Contextual Info: NJW4800 30V/4A Half Bridge Driver GENERAL DESCRIPTION PACKAGE OUTLINE The NJW4800 is a general purpose, half bridge power driver capable of supplying 4A current. The internal gate driver drives high-side/low-side power MOSFET; therefore, it has fast switching.

Contextual Info: NJW4801 Small PKG Half Bridge Driver GENERAL DESCRIPTION PACKAGE OUTLINE The NJW4801 is a general purpose, half bridge power driver capable of supplying ±450mA current. The internal gate driver drives high-side/low-side power MOSFET, therefore, it has fast switching.

NJW4801

Contextual Info: NJW4801 Small PKG Half Bridge Driver • PACKAGE OUTLINE  GENERAL DESCRIPTION The NJW4801 is a general purpose, half bridge power driver capable of supplying 450mA current. The internal gate driver drives high-side/low-side power MOSFET, therefore, it has fast switching.

Contextual Info: SC1302A/B/C Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description PRELIMINARY Features K +4.5V to +16.5V operation K Fast rise and fall times 20ns typical with 1000pf load K Dual MOSFET driver K 2A peak drive current K 40ns propagation delay

12v dc to dual supply circuit diagrams

Abstract: land pattern for msOP 10 1600 v mosfet ina driver
Contextual Info: SC1302A/B/C Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description PRELIMINARY Features u +4.5V to +16.5V operation u Fast rise and fall times 20ns typical with 1000pf load u Dual MOSFET driver u 2A peak drive current u 40ns propagation delay

7030BL

Abstract: 300 Volt mosfet schematic circuit 1205S 1N4148 LL42 SC1205 SC1205CS high speed mosfet driver Class-D DOUBLE FET
Contextual Info: SC1205 High Speed Synchronous Power MOSFET Driver POWER MANAGEMENT Description Features K Fast rise and fall times 15ns typical with 3000pf The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns

Contextual Info: SC1302A/B/C/D/E/F Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features ‹ +4.5V to +16.5V operation ‹ Fast rise and fall times 20ns typical with 1000pf load ‹ Dual MOSFET driver ‹ 2A peak drive current ‹ 40ns propagation delay

Contextual Info: SC1302A/B/C/D/E/F Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features ‹ +4.5V to +16.5V operation ‹ Fast rise and fall times 20ns typical with 1000pf load ‹ Dual MOSFET driver ‹ 2A peak drive current ‹ 40ns propagation delay

SC1302E equivalent

Contextual Info: SC1302A/B/C/D/E/F Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features ‹ +4.5V to +16.5V operation ‹ Fast rise and fall times 20ns typical with 1000pf load ‹ Dual MOSFET driver ‹ 2A peak drive current ‹ 40ns propagation delay

D8025

Abstract: SC1302A SC1302B SC1302C
Contextual Info: SC1302A/B/C/D/E/F Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features ‹ +4.5V to +16.5V operation ‹ Fast rise and fall times 20ns typical with 1000pf load ‹ Dual MOSFET driver ‹ 2A peak drive current ‹ 40ns propagation delay

TR2015

Contextual Info: SC1302A/B/C Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features u +4.5V to +16.5V operation u Fast rise and fall times 20ns typical with 1000pf load u Dual MOSFET driver u 2A peak drive current u 40ns propagation delay u 8-pin SOIC / MSOP packages

LSI1013XT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G P-Channel 1.8-V G-S MOSFET FEATURES TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns

SC-89

Abstract: SC-75 SC-75A
Contextual Info: WTX1012 N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: * Power Mosfet : 1.8V Rated * Gate-Source ESD Protected: 2000 V * High-Side Switching * Low On-Resistance: 0.7Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 10 ns SC-89

110n2g

Abstract: t110n2 110N2 T110N2G 369D NTD110N02R NTD110N02RG NTD110N02RT4G
Contextual Info: NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

MP2451DT

Abstract: Marking V7 MP2451
Contextual Info: MP2451 36V, 2MHz, 0.6A Step-Down Converter DESCRIPTION FEATURES The MP2451 is a high frequency 2MHz stepdown switching regulator with integrated internal high-side high voltage power MOSFET. It provides single 0.6A (or less) highly efficient output with current mode control for fast loop

Contextual Info: LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V G-S MOSFET LSI1013XT1G FEATURES D D D D D D TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns

SXFB

Abstract: MARKING 09q k 246 transistor fet fdc6333 MUC10A marking SZDB ZXMP10 zxmp6A17 SS3H10-E3 ZXMP10A18KTC
Contextual Info: February 14, 2012 PFET Buck Controller for High Power LED Drivers General Description Features The LM3409/09N/09HV/09Q/09QHV are P-channel MosFET PFET controllers for step-down (buck) current regulators. They offer wide input voltage range, high-side differential current sense with low adjustable threshold voltage and fast

Contextual Info: WTX1013 P-Channel 1.8-V G-S MOSFET P b Lead(Pb)-Free 3 FEATURES: 1 * TrenchFET@ Power MOSFET: 1.8-V Rated * Gate-Source ESD Protected: 2000V * High-Side Switching * Low On-Resistance: 1.2Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 14 ns * S-Prefix for Automotive and Other Applications Requiring

LSI1012XT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LSI1012XT1G S-LSI1012XT1G N-Channel 1.8-V G-S MOSFET FEATURES D D D D D D D TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns

Contextual Info: TPS2830, TPS2831 FAST SYNCHRONOUSĆBUCK MOSFET DRIVERS WITH DEADĆTIME CONTROL SLVS196C − JANUARY1999 − REVISED JANUARY 2001 D Floating Bootstrap or Ground-Reference D D D D D D D D D D D D PACKAGE TOP VIEW High-Side Driver Adaptive Dead-Time Control

LSI1012LT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LSI1012LT1G S-LSI1012LT1G N-Channel 1.8-V G-S MOSFET FEATURES D D D D D D D 3 TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns

LSI1013LT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LSI1013LT1G S-LSI1013LT1G P-Channel 1.8-V G-S MOSFET FEATURES D D D D D D D 3 TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns

Contextual Info: TPS2830, TPS2831 FAST SYNCHRONOUSĆBUCK MOSFET DRIVERS WITH DEADĆTIME CONTROL SLVS196C − JANUARY1999 − REVISED JANUARY 2001 D Floating Bootstrap or Ground-Reference D D D D D D D D D D D D PACKAGE TOP VIEW High-Side Driver Adaptive Dead-Time Control