FAST DIOD Search Results

MA2DF60

Abstract: 600v 10A ultra fast recovery diode fast recovery diode 600v 5A
Contextual Info: Typ.15ns Utra fast trr Newly developed 600V/5A Fast recovery diode MA2DF60 „ Overview Unit : mm MA2DF60 is a fast recovery diode which realized Typ.15ns ultra fast trr with the ultra-fast process and the new structure designing. It demonstrates high performance at primary side PFC circuit of

Contextual Info: APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

APT60GF120JRDQ3

Abstract: APT10035LLL
Contextual Info: APT60GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

d 6283 ic

Abstract: APT10035LLL APT50GF120JRDQ3
Contextual Info: APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT60GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

FYPF2004DN

Abstract: FFPF30U60DN fairchild korea ffpf30u20s FFPF04F150S 81663-9 FYPF2006DN FFPF14X150S *F30U60DN
Contextual Info: Fast Recovery/Schottky Diodes Product Line Card Fast Recovery Diodes FRDs Schottky Barrier Diodes (SBDs) Fairchild's broad portfolio of Fast Recovery Diodes has been specifically designed to address Ultra Fast Soft Recovery, high-speed and high-voltage design

Contextual Info: APT11GF120BRD 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

92000

Contextual Info: APT11GF120BRD 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

IN60A

Abstract: PR30A IC270
Contextual Info: APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT11GF120BRD 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT11GF120BRDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO -2 47 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.

RY 227 Tf 227 10A

Abstract: APT40GF120JRD IGBT 1200V 60A
Contextual Info: APT40GF120JRD 1200V 60A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

RY 227 Tf 227 10A

Abstract: pearson 411 IGBT 1200V 60A igbt 60a
Contextual Info: APT60GF120JRD 1200V 100A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

IGBT 1200V 60A

Contextual Info: APT50GF120JRD 1200V 75A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

of 8404

Contextual Info: APT60GF120JRD 1200V E E Fast IGBT & FRED G The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed

Fast Recovery Diode catalog

Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC SURFACE MOUNT IGBTs WITH A FAST REVERSE RECOVERY DIODE HYPER FAST IGBT DEVICES WITH A FAST REVERSE RECOVERY DIODE IGBT CHARACTERISTICS VcES PART NUMBER CONTINUOUS COLLECTOR CURRENT CONTINUOUS COLLECTOR CURRENT

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: □ Non-lsolated Package □ Planar Chips

Module, Diode 200A, 600V Single,

Abstract: CS241020 D-18
Contextual Info: CS241020 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Single Diode Module 200 Amperes/1000 Volts Description: Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast

1N4151

Abstract: MCL4151
Contextual Info: MCL4151 Vishay Telefunken Fast Switching Diode Fast Switching Diode Features D Silicon Epitaxial Planar Diodes D Electrical data identical with the device 1N4151 D Micro Melf package Applications 96 12315 Extreme fast switches Order Instruction Type MCL4151

7272

Abstract: CS641230
Contextual Info: CS641230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Single Diode Module 300 Amperes/1200 Volts Description: Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: □ Non-lsolated Package □ Planar Chips

Contextual Info: LL4150 Fast Switching Surface Mount Diode MINI MELF Features Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductance Mechanical Data Case: MiniMELF, Glass Marking: Cathode Band Only Polarity: Cathode Band Weight: 0.12 grams approx.

Contextual Info: QRS1240T30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy