FAR UV PHOTODIODE Search Results

far uv photodiode

Contextual Info: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.

far uv photodiode

Abstract: Radiation Detector
Contextual Info: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.

Contextual Info: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz

ic 555 use with metal detector

Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Contextual Info: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.

Contextual Info: In Comlinear Corporation Overdrive-Protected Wideband Op Amp APPLICATIONS: FEATURES: • • • • • • • • • • • • • • fast, precision A/D conversion autom atic test equipm ent input/output amplifiers photodiode, CCD pream ps IF processors

500/250/arc xenon flash lamps

Contextual Info: Electron Tube Products Condensed Catalog HAMAMATSU PHOTONICS K.K. Development and production centers for light sensors, light sources, and application-specific products utilizing light to support a wide range of needs in medical diagnosis/treatment, chemical analysis,

5962-8997301PA

Abstract: wideband ampifiers CLC401 CLC401AJ-MLS CLC401AJ-QML J08ARL MNCLC401A-X CLC401 PRIME DIE
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/24/98 Last Update Date: 03/09/99 Last Major Revision Date: 11/24/98 MNCLC401A-X REV 0B0 FAST SETTLING, WIDEBAND HIGH-GAIN MONOLITHIC OP AMP General Description The CLC401 is a wideband, fast-settling operational amplifier designed for applications

TLC27M4IN

Abstract: tlc27m4cn
Contextual Info: TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS093C – OCTOBER 1987 – REVISED MAY 1999 D D D D D D D D D D 1OUT 1IN – 1IN + VDD 2IN + 2IN – 2OUT 1 14 2 13 3 12 4 11 5 10 6 9 7 8 4OUT 4IN – 4IN +

Contextual Info: Technology introduction CHAPTER 13 1 Semiconductor process technology 1-1 Silicon process technology 1-2 Compound semiconductor process technology 2 Assembly technology 2-1 2-2 2-3 2-4 2-5 Packages for diverse needs Flip chip bonding Dicing Module products

LSK389

Abstract: L83-105 LT 6242 PKGS MURATA LTC6240 LTC6241 LTC6242 74C9 LSK389 equivalent CRHV2512AF1007G
Contextual Info: LTC6240/LTC6241/LTC6242 Single/Dual/Quad 18MHz, Low Noise, Rail-to-Rail Output, CMOS Op Amps DESCRIPTION FEATURES n n n n n n n n n n n n 0.1Hz to 10Hz Noise: 550nVP-P Input Bias Current: 0.2pA Typ at 25°C 1pA Max (LTC6240) Low Offset Voltage: 125 V Max

Contextual Info: TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS093C – OCTOBER 1987 – REVISED MAY 1999 D D D D D D D D D D 1OUT 1IN – 1IN + VDD 2IN + 2IN – 2OUT 1 14 2 13 3 12 4 11 5 10 6 9 7 8 4OUT 4IN – 4IN +

TLC27M2MFK

Contextual Info: TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS051C – OCTOBER 1987 – REVISED MAY 1999 D D D D D Trimmed Offset Voltage: TLC27M7 . . . 500 µV Max at 25°C, VDD = 5 V Input Offset Voltage Drift . . . Typically

LDR sensor light dark sensor

Abstract: dark light sensor using LDR AND transistor sensor LDR ldr sensor uv light PHOTO detector FillFactory Photoresistor uv pyro sensor InGaAs apd photodiode CCD and CID Technology
Contextual Info: Silicon versus Film CMOS versus CCD Units of sensitivity Color sensitivity B. Dierickx - FillFactory • • • • Photonics West 2000 Short Course Methods of scanning Methods of light detection in Silicon / CMOS Floor plan of a CMOS image sensor Basic CMOS pixels

TLC27M2MFK

Contextual Info: TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS051C – OCTOBER 1987 – REVISED MAY 1999 D D D D D Trimmed Offset Voltage: TLC27M7 . . . 500 µV Max at 25°C, VDD = 5 V Input Offset Voltage Drift . . . Typically

C10500

Abstract: linear CCD 512 TDI cmos image sensor
Contextual Info: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide

S10604

Contextual Info: 2008 Vol.1 NEWS 2008 Vol.1 E x h i b i t i o n s NEWS Belgium / Denmark / France / Germany / Italy / Japan / Netherlands / Northern Europe / Poland / Portugal / Russia / South Africa / February USGEB 2008 Meeting Lausanne / Switzerland Emerging Technologies in Diagnostic Imaging

reed relay spice model

Abstract: AD549 1117 AT AN-280 MC6801 SN7474 77ti Mixed Signal Circuit Techniques AD549 spice
Contextual Info: P | ANALjOG U d e v ic e s AN-280 application note ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 M ixed Signal Circuit Techniques I n t r o d u c t io n There are considerably more problems involved in the successful design of Mixed

TSSP4038

Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2

circuit diagram blood gas analyzer

Abstract: Light Detector laser
Contextual Info: CHAPTER 14 APPLICATIONS Photomultiplier tubes PMTs are extensively used as photodetectors in fields such as chemical analysis, medical diagnosis, scientific research and industrial measurement. This chapter introduces major applications of photomultiplier tubes and describes the principle and

IR photodiode

Abstract: Photodiode Amplifiers - Op Amp Solutions bill validator machine circuit
Contextual Info: LMV861,LMV862 LMV861/LMV862 30 MHz Low Power CMOS, EMI Hardened Operational Amplifiers Literature Number: SNOSAZ5A LMV861/LMV862 30 MHz Low Power CMOS, EMI Hardened Operational Amplifiers General Description Features National’s LMV861 and LMV862 are CMOS input, low power

S288P

Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of

S11108

Abstract: C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar
Contextual Info: NEWS 02 2009 LASER PRODUCTS PAGE 08 Gas detection: New Quantum Cascade Infrared Lasers SOLID STATE PRODUCTS PAGE 18 Infrared LED L10822, L10822-01, L10823, L10823-01 ELECTRON TUBE PRODUCTS PAGE 37 Flat panel PMT assemblies H10966A-100/H10966B-100 SYSTEMS PRODUCTS

national instruments piezoelectric pressure sensor

Abstract: temperature control system using LM35 AB5A Wheatstone Bridge wheatstone bridge with thermocouple 202-0212
Contextual Info: LMV851,LMV852,LMV854 LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers Literature Number: SNOSAW1 LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers General Description Features National’s LMV851/LMV852/LMV854 are CMOS input, low

reed relay spice model

Abstract: AD549 spice chob Faraday Technology cable clone 1N914 74F32 AD549 ADSP-2100 AN-280 Magnetic Field Sensor FLC 100
Contextual Info: r a ANALOG U DEVICES AN-280 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Mixed Signal Circuit Techniques I n t r o d u c t io n There are considerably more problems involved in the successful design of Mixed