FAIRCHILD TOP MARKING Search Results

FDMS2506SDC

Contextual Info: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

Contextual Info: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

FDMC2514SDC

Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

Contextual Info: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

FDMC7660DC

Abstract: PQFN
Contextual Info: PRELIMINARY DATASHEET FDMC7660DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 22 A, 2.2 mΩ Features „ Dual Cool TM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

3006S

Abstract: 10-6327-01
Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

FDMS2510SDC

Abstract: 10-L41B-11
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

L41B

Abstract: 10-L41B-11 FDMS2504SDC
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

2510s

Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

7660D

Abstract: L41B 10-L41B-11 FDMC7660DC
Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package

10-L41B-11

Contextual Info: FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

MARKING 3020

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package

Contextual Info: FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package

Contextual Info: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

fdms86500

Abstract: FDMS86500dc
Contextual Info: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 60 A, 2.3 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

FDMS86300

Contextual Info: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 60 A, 3.1 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

schottky diode cross reference

Abstract: FYV0203DSMTF FAIRCHILD DIODE
Contextual Info: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted

l4p diode

Abstract: marking L4P SOT23 BAT54_NL L42 SOT23-3 SOT-23 marking l4p fairchild s sot-23 Device Marking
Contextual Info: BAT54/A/C/S Schottky Diodes Connection Diagram BAT54 BAT54A 3 3 3 3 L4P 2 1 1 2 MARKING BAT54 = L4P BAT54A = L42 BAT54C = L43 BAT54S = L44 1 SOT-23 BAT54C 2NC 3 3 2 1 Absolute Maximum Ratings * Symbol 2 1 BAT54S 2 1 Ta = 25°C unless otherwise noted Parameter

A 798 transistor

Abstract: SOT89 MARKING CODE B1 MARKING G3 Transistor 2W marking
Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings