FAIRCHILD S1A DIODE Search Results

FDN363N

Abstract: N6 marking diode marking n9
Contextual Info: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)

n13 sot 65

Abstract: FDT461N 29e8 RS80 marking 461 m067
Contextual Info: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode

m079

Abstract: HUFA75433S3S HUFA75433S3ST Marking N8 KP26
Contextual Info: HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16mΩ General Description Applications These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse

HUFA76404DK8T

Abstract: NL103
Contextual Info: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 5 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

13E1

Contextual Info: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode

AN7254

Abstract: AN7260 ITF86174SQT ITF86174SQT2 TB370
Contextual Info: ITF86174SQT Data Sheet 9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging TSSOP-8 Features • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = −10V - rDS(ON) = 0.024Ω, VGS = −4.5V - rDS(ON) = 0.027Ω, VGS = −4V • Gate to Source Protection Diode

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 MO-153AA
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

76404DK8

Abstract: HUFA76404DK8T RG103 KP108
Contextual Info: HUFA76404DK8T N-Channel Dual MOSFET 62V, 3.2A, 132mΩ Features Applications „ rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A „ Motor / Body Load Control „ Qg(tot) = 3.8nC (Typ.), VGS = 5V „ ABS Systems „ Low Miller Charge „ Powertrain Management „ Low QRR Body Diode

IRF530

Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
Contextual Info: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

KP-69

Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

ccd sensor back illuminated

Abstract: p31b ccd KE CCD424 linear CCD 512 ccd 512 x 512 E 1024 linear CCD-Sensor p2-1a fast linear ccd 512
Contextual Info: CCD424 1024 x 1024 Pixel Image Area Split Frame Transfer CCD Sensor FEATURES 1024 x 1024 Pixels Split Frame Transfer CCD 21 µm x 21 µm Pixel 21.50 mm x 21.50 mm Image Area 11.13 mm x 21.50 mm x2 Storage Areas 100% Fill Factor Back Illuminated Bi-directional Serial Registers

75542P

Abstract: AN9321 HUF75542P3 HUF75542S3S HUF75542S3ST TB334
Contextual Info: HUF75542P3, HUF75542S3S Data Sheet December 2001 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS ON = 0.014Ω, VGS = 10V GATE SOURCE DRAIN (FLANGE)

n20 n21 fet

Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Contextual Info: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital

ISL9N2357D3ST

Abstract: N2357 n2357d
Contextual Info: ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET UltraFET® Trench UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching

Contextual Info: FDP8874 N May 2008 FDP8874 tmM N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

TC124E

Abstract: 2e7 power diode KP350 46E-1 FDP8896 26e3 nl101 46e1
Contextual Info: FDP8896 N May 2008 FDP8896 tmM N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

IRF630N

Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
Contextual Info: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

FQP45N03LT

Abstract: FQP45N03L
Contextual Info: FQP45N03L N-Channel Logic Level MOSFETs 30V, 39A, 0.021Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

AN7254

Abstract: AN7260 AN9321 AN9322 HUF75321D3ST TA75321 TB334
Contextual Info: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75545P3, HUF75545S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 80 V, 75 A, 10 mΩ Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75545S3ST HUF75545P3 • Ultra Low On-Resistance

Contextual Info: HUF75652G3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 8 mΩ Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

mosfet SPICE MODEL

Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
Contextual Info: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET

67E-3

Abstract: FDI038AN06A0 FDP038AN06A0 n10 diode abs s1a NL104
Contextual Info: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge