FAIRCHILD MARKING FORMAT Search Results

marking code 749

Abstract: fairchild 748 marking code 749 fairchild 1N4370A 1N4372A semiconductor band color code DIODE 1N749A Color code diode DO-35 marking code fairchild 1N749A
Contextual Info: Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Value 500 Units mW 4.0 mW/°C -65 to +200 °C Derate above 75°C

1N963B

Abstract: MARKING 182 DO-35 zener diode IN 963 B zener diode
Contextual Info: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200

MARKING 182 DO-35 zener diode

Contextual Info: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200

55C 3V0 ZENER DIODE

Abstract: marking 5c diode zener diode 5C 3v3 5C diode bzx55c5v6 55C 6v8 ZENER DIODE Marking 5c 55C 3V9 ZENER DIODE 5C MARKING BZX55-C24
Contextual Info: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG

1N967B

Abstract: 1N967B FAIRCHILD
Contextual Info: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200

marking E3 sot89

Abstract: my marking code sot 89 sot89 E3
Contextual Info: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

BZX55C10

Abstract: 55C 3V9 ZENER DIODE BZX55C12 55C 2v4 BZX55C18 BZX55C3V9 BZX55C6V2
Contextual Info: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG

DIODE 85c 5V1

Abstract: BZX85C18
Contextual Info: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Derate above 50°C TJ, TSTG

1N5985B

Abstract: 1N5988B 1N6006B 1N5994B 1N5995B 1N5993B 1N6020B 1N5996B
Contextual Info: Zeners 1N5985B - 1N6025B Zeners 1N5985B - 1N6025B Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Derate above 75°C

LL4148

Abstract: FAIRCHILD DIODE FAIRCHILD LL4148 SOD80
Contextual Info: LL4148 Small Signal Diode COLOR BAND MARKING 1ST BAND Black SOD80 2ND BAND Green The 1st Band indicates the cathode band Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VRRM IF AV if IFSM Maximum Repetitive Reverse Voltage

Contextual Info: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T

Y3010DN

Abstract: rectifier diode reference voltage list fairchild top marking y3010 Fairchild marking change diode FYA3010DN application FULL WAVE RECTIFIER FYA3010
Contextual Info: FYA3010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1. Anode 2.Cathode 3. Anode

marking 606

Abstract: diode marking EY
Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.

Contextual Info: LL4148 Small Signal Diode COLOR BAND MARKING 1ST BAND Black SOD80 2ND BAND Green The 1st Band indicates the cathode band Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VRRM IF AV if IFSM Maximum Repetitive Reverse Voltage

Contextual Info: LL4148 Small Signal Diode Cathode Band COLOR BAND MARKING 1ST BAND Black SOD80 The 1st Band indicates the cathode band the 1st Band indicates the cathod Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity Color Band Marking

A 798 transistor

Abstract: SOT89 MARKING CODE B1 MARKING G3 Transistor 2W marking
Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

GENERAL SEMICONDUCTOR SM 3b diode

Abstract: 1N5985B 1N5988B 1N6020B 1N5990B 1N5993B 555 fairchild 1N5996B 1N5987B 1N5991B
Contextual Info: 1N5985B - 1N6025B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA=25°C unless otherwise noted Value Units Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Parameter 500 mW Derate above 75°C

Contextual Info: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Contextual Info: BDW94CF PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93CF Respectively 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor 1203

Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

F20UP30DN

Abstract: ultrafast diode 10a 300v F20UP30
Contextual Info: FFB20UP30DN Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 45ns @IF=10A • High Reverse Voltage : VRRM = 300V • Avalanche Energy Rated • Planar Construction Applications • General purpose • Switching Mode Power Supply

Contextual Info: KSC2859 KSC2859 Low Frequency Power Amplifier • Complement to KSA1182 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value

Contextual Info:
 N-Channel QFET MOSFET 400 V, 30 A, 140 mΩ Description   This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to