FAIRCHILD DC 41A Search Results

tip42

Abstract: TIP42BTU transistor tip41 tip42c
Contextual Info: TIP42 SERIES TIP42/42A/42B/42C TIP42 SERIES(TIP42/42A/42B/42C) Medium Power Linear Switching Applications • Complement to TIP41/41A/41B/41C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

OF TRANSISTOR tip41

Abstract: transistor cross reference
Contextual Info: TIP41 Series TIP41/41A/41B/41C TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

fairchild dc 41A

Contextual Info: TIP41 Series TIP41/41A/41B/41C TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

TIP41C

Abstract: TIP41 TIP41A TIP41B tip41 transistor
Contextual Info: TIP41 Series TIP41/41A/41B/41C TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor TIP42

Abstract: TIP42C TIP42 TIP42A TIP42B
Contextual Info: TIP42 SERIES TIP42/42A/42B/42C TIP42 SERIES(TIP42/42A/42B/42C) Medium Power Linear Switching Applications • Complement to TIP41/41A/41B/41C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

FDP3672

Abstract: diode marking 41a on semiconductor marking n6
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 107V, 41A, 33mΩ Features Applications • r DS ON = 26mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

MOSFET S1A

Abstract: M060 45E-2
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

fdp3672

Abstract: diode marking 41a on semiconductor 100E30
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

tip42

Abstract: transistor TIP42 of TIP41
Contextual Info: TIP42 SERIES TIP42/42A/42B/42C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP41/41A/41B/41C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Symbol : TIP42

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • rDS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

of TIP41

Abstract: data transistor tip41 OF TRANSISTOR tip41 TIP41 TIP41C
Contextual Info: TIP41 SERIES TIP41/41A/41B/41C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Symbol VCBO : TIP41

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit

TIP41

Abstract: tip41c TRANSISTOR TC 100 TIP41C EQUIVALENT NPN Transistor VCEO 80V 100V hfe 100 TRANSISTOR tip41c TIP41A TIP41B NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V
Contextual Info: TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor Features • Complementary to TIP42/TIP42A/TIP42B/TIP42C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage: TIP41

TC143E

Abstract: T 105 micro 25E3
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit

FQP45N03L

Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

10.7A

Contextual Info: FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

76132S

Contextual Info: HUF76132P3, HUF76132S3S Data Sheet December 2002 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

76132P

Abstract: AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334 76132S
Contextual Info: HUF76132P3, HUF76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

76132P

Abstract: TA7613 AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334
Contextual Info: HUF76132P3, HUF76132S3S Data Sheet December 2001 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: TIP41 SERIES TIP41/41 A/41 B/41C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C om plem ent to TIP 42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage Rating Unit 40 V TIP41A 60 V TIP41B

Contextual Info: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,

118E-2

Abstract: KP120 TC292
Contextual Info: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,