FAI 39 Search Results

110nF

Abstract: C1957_210_4_VAR_060316
Contextual Info: Medium Power Film Capacitors FAI RoHS Compliant TUNING The FAI series uses metallized polypropylene dielectric specifically designed for very high reactive power. The FAI's special design gives to this series a very low level of stray inductance. APPLICATIONS

Contextual Info: Medium Power Film Capacitors FAI RoHS Compliant TUNING The FAI series uses metallized polypropylene dielectric specifically designed for very high reactive power. The FAI's special design gives to this series a very low level of stray inductance. APPLICATIONS

FAI16J0334K

Abstract: FAI26I0245K FAI46I0245K Polypropylene CAPACITOR
Contextual Info: Medium Power Film Capacitors FAI TUNING The FAI series uses metallized polypropylene dielectric specifically designed for very high reactive power. The FAI's special design gives to this series a very low level of stray inductance. APPLICATIONS These capacitors have been designed principally for:

FAI26J0664K

Abstract: 8 kvar capacitor
Contextual Info: Medium Power Film Capacitors FAI TUNING The FAI series uses metallized polypropylene dielectric specifically designed for very high reactive power. The FAI's special design gives to this series a very low level of stray inductance. APPLICATIONS These capacitors have been designed principally for:

Contextual Info: Medium Power Film Capacitors FAI RoHS Compliant TUNING The FAI series uses metallized polypropylene dielectric specifically designed for very high reactive power. The FAI's special design gives to this series a very low level of stray inductance. APPLICATIONS

Contextual Info: Medium Power Film Capacitors FAI TUNING The FAI series uses metallized polypropylene dielectric specifically designed for very high reactive power. The FAI's special design gives to this series a very low level of stray inductance. APPLICATIONS These capacitors have been designed principally for:

8 kvar capacitor

Abstract: kvar circuit
Contextual Info: Medium Power Film Capacitors FAI TUNING The FAI series uses metallized polypropylene dielectric specifically designed for very high reactive power. The FAI's special design gives to this series a very low level of stray inductance. APPLICATIONS These capacitors have been designed principally for:

Contextual Info: Medium Power Film Capacitors FAI TUNING The FAI series uses metallized polypropylene dielectric specifically designed for very high reactive power. The FAI's special design gives to this series a very low level of stray inductance. APPLICATIONS These capacitors have been designed principally for:

1-800-4NEWARK

Abstract: 1-800-4-NEWARK newark Jackson Labs Technologies Uraco Technologies 876-3132
Contextual Info: MOTOROLA AUTHORIZED DISTRIBUTOR & WORLDWIDE SALES OFFICES NORTH AMERICAN DISTRIBUTORS UNITED STATES ALA B A M A H un tsville Allied Electronics, Inc. 205 721-3500 Arrow Electronics . (205)837-6955 FAI. (205)837-9209

WARIKAP

Abstract: dioda BBP602 CI 7412
Contextual Info: 14 - 74/2 WARIKAP BBP602 SWW 1156-151 Dioda krzemowa epiplanarna o zmiennej pojemnoáci. W arikapy BBP602 s$ przeznaczone do pracy w ukiadach automatycznej regulacji czçstotliwoàci odbiorników radiowych i telewizyjnych w zakresie fai ultrakrótkich. c X

WARIKAP

Abstract: BBP624
Contextual Info: 15 - 74/2 WARIKAP BBP624 SWW 1156-151 Dioda krzem ow a ep ip lan arn a o zmiiennej pojem nosci. W arikapy BBP624 sq przeznaczone do p racy w ukladach elektronicznego p rzestrajan ia czçstotliwosci w odbiornikach radiow ych w zakresie fai ultrak ró tk ich .

Contextual Info: 10 SIB NOTES 1. m s m ^ 52559-* I9 i¥ffl\Y3; C7 L ''TISEIE SD-52559-* I9 £#K8"Fai'„ IN THE PACK AGE, ACTUATOR OF PART NO.52559-* I9 SHOULD BE LOCKED RE DETAILED DIMENSIONS,SEE SD-52559-* I9 REEL 2. i_ji_ji_ji_ji_ji_ji_ji_ji_ji_ji_ji_ji 1 O O C H S / U — JL

Contextual Info: 01/21/2004 16:20 FAI 2194774856 OKAYA ELECTRIC 00 0 1 Okaya Electric America Inc. 503 Wall Street, Valparaiso, Indiana 4Ó363 Ph: 219-477-4488 / Fax: 21 9-477-4856 SPECIFICATION FOR APPROVAL MODEL TYPE: LCD MODULE MODEL N U M B E rT Î^ 6~ \ g l'? o ^ LQ S~ ~(\

DM113

Abstract: DM112 DM101 DM103 DM111 DM-112 DM102
Contextual Info: Foxconn D-Sub, Metal Shell, Non-Filtered DM Series P/N Description DM 1 1 3 2 3 - D4 1 I I fai Í3l [T| fil [il |~n [T ] Series Prefix: DM: Non-Filtered D-Sub m Termination Type A: |~3~| Contact Type 0: 1: Connector Performance: 19 Positions 9 Positions 15 Positions

JIS B 7512

Abstract: NOP998 taiyo yuden date code Taiyo 93-R information Taiyo 93 T
Contextual Info: 06/18/98 10:17 FAI 847 925 08flfl TAIYO YÜDEN CHICAGO @002 PRIORITY No. T9 5 7 F 2 1 SPECIFICATION HIGH-FREQUENCY CHIP INDUCTOR MULTI-LAYER IIK2125 TYPE SERIES TAIYO YUDEN CO. LTD. DATE: 27. Aug. 1997 I TAIYS00004 06/18/98 10 :17 FAX 847 925 0899 TAIYO YUDEN CHICAGO

87S3D

Abstract: HK-1-G
Contextual Info: 06/18/98 10:20 FAI 847 925 0899 TAIYO YUDEN CHICAGO 0019 No. T957F06 SPEC I F I CAT I O N I HIGfl-FKEQUENCY MULTI-LATTER CHIP INDUCTOR HK1608 TYPE SERIES TAIYO YUDEN CQ.LTDDATE: 21. Apr. 1997 T A IY S00003 06/18/98 10:20 FAX 847 925 0899 TAIYO YUDEN CHICAGO

2N1537A

Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type y kü y VCEO y y tao V ycc. y y„. y Min. CURRENT CA IN fai f VcE @ Max. V A s a t u r a t io n y y 1.50 y OL TAGES ¿e @ Ib A A &J-C ac / w 4 AMP GERMANIUM PNP 2N234A 2N235B 2N255A 2N256A 2N257 TO-3 TO-3

la 5531

Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
Contextual Info: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£

uc94v0

Abstract: gc 7137
Contextual Info: 10 2.5 D ±0. MIN. C ±0. I B I Qo6551 PITCH D E T A IL r-ov'j'juvo (mmm HS'G LO CK FOR SO LD E RIN G AREA lie : u lt t c : u t. (SEE T A B LE ) p c : □ ile : i f : 0 0.9±0.05 n\ \\ » fai UbUUb -bbbUdd- 00.8 00.6 °x! m l_ 0. I X 0O.T±O.O5 0.3 5M IN .

xeh 250 120

Abstract: T108 TC-6056 UUJK
Contextual Info: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E

78L82

Abstract: A78L00 A78L 78l82ac 78L62
Contextual Info: MA78L00 SERIES 3-TERMINAL POSITIVE VOLTAGE REGULATORS FAI RCHI L D LINEAR I N T E G R A T E D C I R C U I T S G E N E R A L D E S C R IP T IO N — The ¿¿A78LOO series o f 3-Term inal Positive Voltage Regulators is constructed using the F a irch ild Planar* e pita xial process. These regulators em plo y in ternal curre nt

IN5450

Abstract: IN5444 IN544 5lo300 IN5470 in5476
Contextual Info: FAI HO. ¡ ' S n 00000000000 - w - m f H IG H Q S IL IC O N V A R A C T R O N V O L T A G E ^ V A R !A B L E C A P A C IT A N C E D IO D E S GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN 546176 B A N D C > Q @ - 4 V t>C , 5 0 M H * to 6 0 0 • LOW LEAKAG E

F0534

Abstract: Hx460 H150 fa1l3n TC-6110 L82 NEC tfl06
Contextual Info: NEC C o m p o u n d T ra n sisto r m ^ T i x t x FAI L3N m / L f t M N P N i : cP # V j Ê £ J 3 £ X 'f 'y ? ‘ > Z X > Y ^ > Ï > * ? ? M m . & m m t : mm 2 .8 ± 0.2 ( R i = 4 .7 kG , 1.5 R 2 = 10 k i2 ) O F N 1 L 3 N t => > 7 " >j / > ? I) T ' f t ' f f l T ' ë £ 1 “ 0

aa2c

Abstract: 82c404 SBD03
Contextual Info: Pinouts % § 8 Û QS 5: oo 0Q«DQ03aQQû5<S< O fai 2 rj O J qS E uu wQ rTcu>y S S B § 5 S S S q S B p _ S 2 5 § |q u ^ QLüUgzftW<Û 3U _ . u 2 > jo ô o îz u »«*25 2 <î c /5 c /x /î0 0 0 0 0 0 0 '5 0 0 0 U U U U r0 O '0 0 a .C L .£ L .û .a .û .B .û .0 0 £ 0 < ffl<