FAH DIODE Search Results

VBUS052CD-FAH

Contextual Info: V ishay I n tertech n o l o g y, I n c . Diodes - ESD Array with Flow-Through Design AND TEC I INNOVAT O L OGY VBUS052CD-FAH, VBUS054CD-FHI N HN Diodes O 19 62-2012 ESD Bus Port Protection Array in Ultra-Small LLPxx13 Plastic Package FEATURES • • • •

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . DIODES VBUS052CD-FAH, VBUS054CD-FHI ESD Bus Port Protection Array in Ultra-Small LLPxx13 Plastic Package FEATURES • • • • - and 4-line ESD protection with flow-through design 2 Capacitance Cd = 0.8 pF

FAH diode

Abstract: K375 DIODE FAH 45
Contextual Info: OM6OL6OPB OM50F60PB Prelim inary Data Sheet OM45L120PB OM35F120PB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES H ig h C u r r e n t . Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 75 A m p Dual I G B T s W it h F R E D D i o d e s FEATURES • Includes Internal FRED Diode

FAH 37

Abstract: SSOP16 TD62706 TD62706P TD62706A-H
Contextual Info: TD62706P-H/FA-H TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62706P−H,TD62706FA−H 6CH HIGH−VOLTAGE SOURCE−CURRENT DRIVER The TD62706P−H and TD62706FA−H are comprised of six source current Transistor Arrays. These drivers are specifically designed for fluorescent display

Contextual Info: TD62706P-H/FA-H TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62706P−H,TD62706FA−H 6CH HIGH−VOLTAGE SOURCE−CURRENT DRIVER The TD62706P−H and TD62706FA−H are comprised of six source current Transistor Arrays. These drivers are specifically designed for fluorescent display

TD62706

Abstract: TD62706FA-H TD62706P-H fah 06
Contextual Info: TOSHIBA TD62706P-H/FA-H TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62706P-H, TD62706FA-H 6ch HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62706P-H is and TD62706FA-H are comprised of six TD62706P-H source current Transistor Array. This driver is specifically designed for fluorescent display

Contextual Info: TO SHIBA TD62706P-H/FA-H TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tr>fi57flfiP-H Tu n fi? 7a n<*mtfiF• mA»-H■ ■ ■ ■ m ug m 6ch HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62706P-H is and TD62706FA-H are comprised of six source current Transistor Array.

FAH diode

Abstract: D617 M/diode fah 23
Contextual Info: Bulletin 12063/A bitemational I»i]Rectifier SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 1.0 to 1.5 ps recovery tim e ■ High voltage ratings up to 1600V ■ High current capability ■ O ptim ized turn on and turn o ff ch a ra cte ristics

51001Z

Abstract: siemens VFT i314 laserdiode application
Contextual Info: SIEMENS 1300 nm Laser in Coaxial TO-Paekage STH 510Q1Z Designed for application In fiber-optic networks Laser diode with MUiu-Qüâiîîüirïi We!! structure Suitable for bit rates up îo 1 Gbiys * Ternary photodiode at rear mirror for monitoring and control of radiant power

FAH diode

Abstract: STL 1550 STT 3 SIEMENS AOO E Q62702-P3042 EE-70 552 diode m 552 diode
Contextual Info: SIEM EN S 1550 nm Laser in Receptacle Package, Low Power STL 81ÜQ7X * * * * Designed or application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodindfl at rear mirror tor monitoring and

Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.

Contextual Info: @ OPTEK Product Bulletin OP266A June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP266A, OP266B, OP266C, OP266D Features • Narrow irradiance pattern • Mechanically and spectrally matched to the O P 5O6 series devices • Significantly higher power output than

FAH DIODE

Abstract: FAH diode 28
Contextual Info: 3GE D N EC J • b427525 ‘0051240 1 ■ ELECTRONICS INC T^-O? LASER DIODE N D L5 0 0 9 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N N D L5009 is a long wavelength laser diode especially designed for longdistance high capacity transmission systems. The

KSD5001

Abstract: KSD5002 tv samsung samsung tv T 33 16AF
Contextual Info: SAMSUNG SEMICO NDU CTO R 1ME D INC | Q 0 0 ?b 3 fl 7 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5001 T-33-1 3 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN HIGH Collector-fiaM Voltage' Vcao=1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25° C)

Contextual Info: -fid?Z£25 N E C ELECTRONICS l í S l u « DD1 . I Î , L r INC 98D “ 185:21 T~y/-a^ TA S H E IT P c lim im n l NEC LASER DIODE ELECTRON DEVICE NDL3110 830 nm OPTICAL DISK MEMORY APPLICATION AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE D ESCR IPTIO N

QS 100 NPN Transistor

Abstract: KSD5013 KSD5014 samsung tv C 3311 transistor
Contextual Info: SAMSUNG SEMICONDUCTOR INC D | GOQ?bbfl 5 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5013 T-33-11 CO LO R TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN High Collector-Base Voltage V c b o = 1 5 0 0 V A b s o l u t e m a x i m u m r a t i n g s (Ta=25°c)

FAH diode

Abstract: nec re M/diode fah 42
Contextual Info: N E C ELECTRONICS INC bZE D • b 42? 5 S5 D 0 3 B Q 35 SÛT H N E C E DATA SHEET N E C L A S E R D I O D E NDL5800D ELECTRON DEVICE 1 3 1 0 n m OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .5 Gb/s DESCRIPTION NDL5800D is 1310 nm DFB Distributed Feed-back laser diode chip on carrier w ith ribbon lead. This device is designed

transistor 9014

Abstract: TRW POWER 0PI3150 transistor 9014 C npn MW131 0PI3250 OPI3150 OPI315Q QPI3250 9014 npn
Contextual Info: OPTEK TECHNOLOGY INC DbE D | hT^âSÛO 0000a4t. 1 | Optoelectronics Division TRW Electronic Components Group 1987 Cost Saver Product! C a | , TRW f jr mofe information! Product Bulletin 5221 January 1 9 8 5 # - MX.WW ^ y Optically Coupled Isolators Types QPI3150, OPI325Q

Contextual Info: TOSHIBA TLP200D TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP200D PBX MODEM *FAX CARD MEASUREMENT INSTRUMENT The TOSHIBA TLP200D consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 pin SOP. The TLP200D is a 2-Form-A switch which is suitable for

ADB13

Contextual Info: DATA SHEET LASER DIODE NDL7001 1310 nm FIBER OPTIC COMMUNICATIONS InGaAsP M OW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1310 nm laser diode for fiber optic com m unications and have a M u ltip le Quantum W e ll M Q W structure and built-in InGaAs m onitor photo diode.

87C42

Abstract: keyboard matrix using 8051 IC laptop keyboard schematic matrix 8042 pinout keyboard schematic xt 4*4 matrix keypad 8051 laptop keyboard schematic intel 8042 microcontroller, ibm pc keyboard pinout laptop 88h-8Fh
Contextual Info: TECHNICAL USER’S MANUAL FOR: Digital-Logic AG MultiKey/42L Technical Reference V1.11 R:\HANDBUCH\DIVERSE\DIGITAL-LOGIC MultiKey.doc Nordstr. 4F, CH-4542 Luterbach Tel.: +41 0 32 681 53 36 - Fax: +41 (0)32 681 53 31 DIGITAL-LOGIC AG MultiKey/42L Manual V1.11

OPI3150

Abstract: MW131 0PI3150 0PI3250 OPI3250 QPI3150
Contextual Info: OPTEK TECHNOLOGY INC OL.E D | b7^flS00 000024t. 1 | O p to e le c tro n ic s D iv is io n T R W Electronic Components Group 1 9 8 7 C o s t S a v e r P ro d u c t! C a |, T R W f r m o fe in fo r m a tio n ! M a r A A H 'j u j r M W W Product Bulletin 5 2 2 1

2FAH-C20R

Abstract: b2 diode
Contextual Info: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection

Contextual Info: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection