FABRICATION PROCESS STEPS Search Results

ASL3C

Abstract: ALVCH16245 151x24
Contextual Info: TEXAS INSTRUMENTS Initial Notification for the ASL3C Process with Retrograde Well to the Freising, Germany Wafer Fabrication Site November 19, 1998 Abstract Texas Instrument’s Friesing, Germany Wafer Fabrication Facility is qualifying the ALS3C process with retrograde well. This process change will affect all products in the ALVCH product family.

68LC060

Abstract: F98S Motorola Mil Std. 883 xpc860 A113 J24A XPC850
Contextual Info: Reliability Report for Networking Communication Microprocessors XPC850 Rev 0.3 XPC860 XPC860T 0.42m Single Poly Wafer Fabrication Process Revision: 5/99 1.0 Purpose and Description This report summarizes the reliability data for Motorola communication microprocessors fabricated on the 0.42m single polysilicon process in our wafer

Contextual Info: TM September 2013 • What are Semiconductor Devices? • How Semiconductors are Made − Front-End Process − Back-End Process • Fabrication Facility and Equipment Issues • Business Aspects of Supplying Semiconductors TM 2 TM 4 A conductor carries electricity like a pipe

F98S

Abstract: xpc860 68LC060 A113 J24A XPC850 Motorola, HBM, 1kv
Contextual Info: Freescale Semiconductor, Inc. Reliability Report for Freescale Semiconductor, Inc. Networking Communication Microprocessors XPC850 Rev 0.3 XPC860 XPC860T 0.42m Single Poly Wafer Fabrication Process Revision: 5/99 For More Information On This Product, Go to: www.freescale.com

ed28 smd diode

Abstract: hv 102 mos fet transistor diagram of high frequency pvc welding machine schematic diagram of electric cookers Ultrasonic Cleaner schematic engel injection machines TEG 2423 40khz ULTRASOUND CLEANER ultrasonic generator 40khz for cleaning schematic of trigger 555 n-mosfet
Contextual Info: FAILURE MECHANISMS OF SEMICONDUCTOR DEVICES III. FAILURE MECHANISMS OF SEMICONDUCTOR DEVICES 1. INTRODUCTION 2. FAILURE MECHANISMS AND SCREENING 3. FAILURE MECHANISMS ATTRIBUTED TO WAFER FABRICATION PROCESS 3.1 HOT CARRIER 3.3.1.1 INTRODUCTION 3.3.1.2 HOT CARRIER MECHANISM

Contextual Info: APEX 20KC Programmable Logic Device April 2002 ver. 2.1 Features. Data Sheet • ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

Contextual Info: APEX 20KC Programmable Logic Device March 2002 ver. 2.0 Features. Data Sheet • ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

verilog prbs generator

Abstract: prbs pattern generator using vhdl AOI gate d flip flop
Contextual Info: ASIC Design Guidelines Introduction The Atmel ASIC Design Guidelines constitute a general set of recommendations intended for use by designers when preparing circuits for fabrication by Atmel. The guidelines are independent of any particular CAD tool or silicon process. They are

EP20K1000EFI672-2X

Abstract: EP20K100ETC144 EP20K100EFC324-3 EP20K100FC324-3V EP20K400EFC672-3
Contextual Info: APEX 20KC Programmable Logic Device April 2002 ver. 2.1 Features. Data Sheet • ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

EP20K1000C

Abstract: EP20K200C EP20K400C EP20K600C EPC16 FA12 APEX 20ke development board sram
Contextual Info: APEX 20KC Programmable Logic Device February 2004 ver. 2.2 Features. Data Sheet • ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

EP20K1000C

Abstract: EP20K200C EP20K400C EP20K600C EPC16 FA12 ep20k apex board
Contextual Info: APEX 20KC Programmable Logic Device February 2002 ver. 2.0 Features. Data Sheet • ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

EP20K1000C

Abstract: EP20K1500C EP20K200C EP20K400C EP20K600C EPC16
Contextual Info: APEX 20KC Programmable Logic Device October 2001, ver. 1.2 Features. Data Sheet • ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

Contextual Info: APEX 20KC Programmable Logic Device February 2004 ver. 2.2 Features. Data Sheet • ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

EP20K1000C

Abstract: EP20K200C EP20K400C EP20K600C EPC16 FA12
Contextual Info: APEX 20KC Programmable Logic Device March 2002 ver. 2.0 Features. Data Sheet • ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

digital clock using logic gates

Abstract: EP20K1000C EP20K100C EP20K1500C EP20K200C EP20K400C EP20K600C EPC16 epc1 configuration device
Contextual Info: APEX 20KC Programmable Logic Device April 2001, ver. 1.1 Data Sheet • Features. Preliminary Information ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

EP20K1000C

Abstract: EP20K1500C EP20K200C EP20K400C EP20K600C EPC16
Contextual Info: APEX 20KC Programmable Logic Device October 2001, ver. 1.2 Features. Data Sheet • Preliminary Information ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

ep20k160ebc

Abstract: ep20k400ef EP20K100F EP20K160EQ EP20K100EFC324-3 EP20K100FC324-3V EP20K200RC ep20k400CF672 EP20K100QI208-2
Contextual Info: APEX 20KC Programmable Logic Device March 2001, ver. 1.0 Data Sheet • Features. Preliminary Information ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices

KOWA

Abstract: 2014n J0123 vitramon 10C
Contextual Info: STYLE V J 0 4 0 2 M onolithic C eram ic Chip C apacitors _ FEATURES Vttramon* proprietary "wet fabrication* process lor manufacturing ceramic chip capacitors results in maximum capacitance per unit area. A full range of dielectrics and voltage ratings is available in

itr 9009

Abstract: R/Vitramon J0603 marking code k4t KOWA specification CECC 3009 VJ0603Y104KXXMT
Contextual Info: _ STYLE V J 0 6 0 3 M onolithic C eram ic Chip C apacitors Igtl Ji FEATURES Vitramon* proprietary "wet fabrication' process or manufacturing ceramic crup capacitors results in maximum capacitance per unit area. A full range ot dielectrics and voltage ratings is available in industry

Strain gage report

Abstract: with or without underfill flip SMT Texas "Strain Gage" ENIG strain rate texas instruments automotive flip chip underfill Texas alternative ENIG
Contextual Info: Application Report SPRAA55 - August 2004 Use and Handling of Semiconductor Packages with ENIG Pad Finishes Eddie Moltz DSP Packaging ABSTRACT Electroless Nickel/Immersion Gold plating, or ENIG, is a versatile process and enables fabrication of high-density flip chip BGA substrates needed for high-performance IC chips.

Contextual Info: 5410 series VCXO Module ICs with Built-in Varicap OVERVIEW The 5410 series are VCXO module ICs supported 20MHz to 62MHz fundamental oscillation. They employ a recently developed varicap diode fabrication process at fixation communication usage that provides a low phase noise characteristic and a wide frequency pulling

Vendome

Contextual Info: STYLE V J0 80 5 M onolithic C eram ic Chip C ap acitors FEATURES VHram on* proprietary "W et fabrication* process for m anufacturing ceram ic chip capacitors results in maximum capacitance per unit area. A fu ll range of dielectrics and voltage ratings is available in

Contextual Info: 5077 series VCXO Module ICs with Built-in Varicap OVERVIEW The 5077 series are LV-PECL output VCXO ICs that provide a wide frequency pulling range. They employ bipolar oscillator circuit and recently developed varicap diode fabrication process that provides a low phase noise characteristic and a wide frequency pulling range

Contextual Info: 5420 series VCXO Module ICs with Built-in Varicap OVERVIEW The 5420 series are LV-PECL output VCXO ICs that provide a wide frequency pulling range. They employ bipolar oscillator circuit and recently developed varicap diode fabrication process that provides a low phase noise characteristic and a wide frequency pulling range