F7101 Search Results

f7101

Abstract: MOSFET IRF7101 f-7101 MS-012AA
Contextual Info: SO-8 MS-012AA EXAMPLE: THIS IS AN F7101 (MOSFET) ñ ñ YWW ññ INTERNATIONAL RECTIFIER LOGO IOR xxxx O F7101 yyyy DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER

ic 94101

Abstract: innovative dro IRF7342D2
Contextual Info: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V

F7101

Abstract: IRF7101 IRF7311 MS-012AA
Contextual Info: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier

IRF7476

Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
Contextual Info: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance

IRF8113

Abstract: F7101 IRF7101
Contextual Info: PD - 94637 IRF8113 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

IRF 4310

Abstract: F7101 IRF7101 IRF7832
Contextual Info: PD - 94594A IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 4.0m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS

IRF7317

Abstract: MS-012AA
Contextual Info: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V

MS-012AA

Abstract: AN1001 EIA-541 F7101 IRF7101 IRF7491 IRF74
Contextual Info: PD - 94537 IRF7491 HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS RDS on max ID 80V 16mΩ@VGS = 10V 9.7A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

BQ2053

Contextual Info: BENCHMARQ Advance Information bq2053 Lithium ton Pack Supervisor Features General Description >- Protects two to four Lithium Ion series cells from overvoltage, undervoltage, and short circuit The bq2053 Lithium Ion Pack Supervisor is designed to control the

Contextual Info: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Contextual Info: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package

Contextual Info: IRF7416PbF-1 HEXFET Power MOSFET VDS -30 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.020 Ω 61 nC -10 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: PD – 91746D IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented

IRF7907PBF

Contextual Info: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications

irf7807pbf

Abstract: 10BQ040 EIA-541 F7101 IRF7101 IRF7807 IRF7807A hexfet pair
Contextual Info: PD – 95290 IRF7807PbF IRF7807APbF HEXFET Chip-Set for DC-DC Converters • • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description These new devices employ advanced HEXFET

irf6217trpbf

Abstract: AN 9525.2
Contextual Info: PD - 95252 SMPS MOSFET IRF6217PbF HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

Contextual Info: PD - 9.1559A International IG R Rectifier IRF9956 PRELIMINARY HEXFET Power MOSFET • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated

IRF9952

Contextual Info: PD - 9.1561 A International IG R Rectifier IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated N-CHANNEL M ÜSF ET

IRF7316

Abstract: tfr 586
Contextual Info: International lOR Rectifier PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V q ss = -30V Rds oh = 0.058Q Description Fifth Generation HEXFETs from international Rectifier

Smd code S08

Abstract: smd diode schottky code marking 2F
Contextual Info: International pd-9.i 4i 2C IwR Rectifier preliminary IR F 7 4 2 2 D 2 FETKY M OSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint a rrr-

LT 33 diode surface mount

Contextual Info: PD - 9.1238C International IG R Rectifier IRF7301 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V dss = 2 0 V

1N MARKING

Contextual Info: International I O R Rectifier PD - 9.1435B IRF7311 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 JD I g 1n r 3T3D1 ss a t 3 D D2 G2 or a # 3 D D2 Vdss = 20 V Ros on = 0.029Î2

Contextual Info: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier

Irf7314

Contextual Info: P D - 9.1436B International l R Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V T echnology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V dss = ^D S o n = -20V 0.058Î2 Description Fifth Generation HEXFETs from International Rectifier