F5V90HVX2 Search Results

2SK2669

Abstract: MOSFET 900V TO-220 F5V90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS F5V90HVX2 Case : TO-220 (Unit : mm) 900V 5A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

2SK2669

Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS F5V90HVX2 Case : TO-220 (Unit : mm) 900V 5A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2669

Abstract: F5V90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS F5V90HVX2 Case : TO-220 (Unit : mm) 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2669

Abstract: F5V90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS Case : TO-220 F5V90HVX2 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

2SK2188

Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Contextual Info: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)

Contextual Info: HVX-ÏÏVU-vÇ /X 9-M 0S FE T HVX-H SERIES POWER MOSFET N - Î O U T L IN E D IM E N S IO N S 2SK2669 F5V90HVX2 900V 5 a • R A TIN G S ■ ÎÊ ÎÎJ I^ /È fë A b s o lu te m M a x im u m s R a tin g s ¡>2 /~i S ym b ol Item S to ra g e T e m p e ra tu re

Contextual Info: H V X - ï ï v U —X /t 9 - M O S F E T H V X -H SERIES POWER MOSFET N -^ -V * ;U . • W fé \f-îiB I O U T L IN E D IM E N S IO N S 2SK2669 F5V 90H V X 2 ■ Æ ÎS * R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item (T c = 2 5 °C ) 3k ft Conditions

IRF250N

Abstract: ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714
Contextual Info: STI Type: 2N5881 Notes: *BVCBO Polarity: NPN Power Dissipation: 160 Tj: 200 VCEV: 60* VCEO: 60 hFE min: 20 hFE max: 100 hFE A: 6.0 VCE: 1.0 VCE A: 7.0 fT: 4.0 Case Style: TO-204AA/TO-3 Industry Type: 2N5881 STI Type: DTS4067 Notes: Polarity: NPN Power Dissipation: 100