F3 SOT23 Search Results

F5 MARK

Abstract: marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3
Contextual Info: KST1009F1/F2/F3/F4/F5 KST1009F1/F2/F3/F4/F5 AM/FM RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units VCBO Collector-Base Voltage

KDS193

Abstract: marking F3 sot23
Contextual Info: SEMICONDUCTOR KDS193 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 F3 1 2 Item Marking Description Device Mark F3 KDS193 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

716296

Abstract: 6 PIN SMD IC FOR SMPS f3 double diode smd 1812B104K501 Finepower 716296 ICE3A0365 smd diode p80 650V-CoolMOS pin SMD IC FOR SMPS circuits zener diode 6w
Contextual Info: Application Note, V1.1, Apr 2006 AN-EVALM-ICE3A0365 6W 12.5V SMPS Evaluation Board with CoolSETTM F3 ICE3A0365 CoolBIAS-F3 Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2006-04-11 Published by Infineon Technologies Asia Pacific, 168 Kallang Way,

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS193 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time 1 MARKING: F3 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit VRM 85 V

1SS193

Contextual Info: 1SS193 Switching Diodes SOT-23 1. ANODE 2. N.C. 3. CATHODE Features — — Low forward voltage : VF 3 =0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: F3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits

f3 diode sot23

Abstract: marking code F3 diode MARKING F3 marking f3 sot-23
Contextual Info: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM

marking code F3

Abstract: diode MARKING F3
Contextual Info: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)

ISS193

Abstract: ISS193 F3 marking f3 sot-23 1SS193
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS193 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. ANODE MARKING: F3 2. N.C. 3. CATHODE Maximum Ratings @TA=25℃

KSC3488

Abstract: KSC853 KSA953 KSC815
Contextual Info: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )

KSC815

Contextual Info: TRANSISTORS FUNCTION GUIDE SOT-23 Transistors Continued Device and Polarit(Marking) Condition NPN PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) BCW 29(Ct) BCW31(D1) 1.1.2 (V) 25 25 25 25 25 20 20 V ce lc (A) (V) 3 3 3 3 1 (mA) MIN

74AHC14

Abstract: MINISMDC110-2 BLADJ U420 J507 UB5112C-S1
Contextual Info: 1 2 3 4 5 6 7 8 USB CONNECTOR + 5VS +5V J1 VMAIN F3 D/USB_PWR0 MINISMDC110-2 POLYSW_MINISMDC110 C10 10U 10V 1210 R22 100K 0603B A 12 USB_OC0# BEAD_120Z/100M 0805C GND 24 L9 9 ENABKL_VGA L5 20 BLADJ BEAD_120Z/100M 0805C C9 1000P 0603B R40 20,22 LID# AC_POWER#

Contextual Info: Si2343DS New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) -30 0.053 @ VGS = -10 V -4.0 APPLICATIONS D Load Switch D PA Switch TO-236 (SOT-23) G 1 3 S D 2 Top View Si2343DS (F3)*

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

BA811

Contextual Info: MOTOROLA r SC -CXSTRS/R F3- 6367254 MOTOROLA SC ÌF | b 3 b 7 E S 4 XSTRS/R MAXIMUM RATINGS F G D finaS 96D 8 1 9 8 5 . Sym bol Value Collector-Emitter Voltage v CEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage Veb o 5.0 Vdc ic 50 mAdc

2N6426

Contextual Info: “Tb MOTOROLA SC -CXSTRS/R F3- 6367254 M OTO RO LA SC CXSTRS/R D if J b3 t ,7 2S H OGflEDSl S 96D F i 82051 7 21 5 - M A XIM U M RATINGS I i » I Sym bol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 2SC3194 2sc3226 C4369 kta949 2sc3192
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No V CEO A M RF 30 20 fT (T Y P M IN MAX NF (m W ) ^CE (V) (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 V CE (V) (dB) I 5.0 6 - 1 100 50 TO-92(M) F5 50 TO-92(C) F3 6 - 1 100

2SC3207

Abstract: 2sc3205 KTC2075 2SC3228 2SC3226 2SC3229 2SA1273 KTC2230A Y kta949 2SC3194
Contextual Info: Electrical Characteristics T a - 2 5 0O (m W V CEO N PN F M /R F. M IX O SC PN P (T Y P ) M IN (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 MAX NF Ic (mA) V CE •e f (dB) (V) (mA) (M H z ) I 5.0 6 - 1 50 TO-92(M) F5 100 50 TO-92(C) F3

T3D81

Abstract: SE090 A3CG pwa-5026 g33 mlf 3E090 RPS09 c621 ses Q603B TL931
Contextual Info: p. C 1 8 9 lOOGP ^ C219 1* C 2 1 1 •>. C 2 1 4 Z lO O O P 0 . 1 U /t n 1 0 0 U / 6 . 3 V 0603B I CP7243 C218 0.1U 0603B ■s, C 1 9 5 “ 1000P C 2 1 6 *0.1U 0603B C220 0.1U 0603B p n f Q - - 631 K 34 G3 5 •J3ÌS G33 F3 6 Fà4 E3 5 E33 D3 4 \ ""c7 T \

Contextual Info: NJU7704/05 VOLTAGE DETECTOR GENERAL DESCRIPTION The NJU7704/05 is a low quiescent current voltage detector featuring high precision detection voltage. The detection voltage is internally fixed with an accuracy of 1.0%. The NJU7704/05 are useful for preventing malfunction of

f45a

Abstract: NJU7705 SC88A NJU7704 NJU7704F F48a f43a F19A
Contextual Info: NJU7704/05 VOLTAGE DETECTOR GENERAL DESCRIPTION The NJU7704/05 is a low quiescent current voltage detector featuring high precision detection voltage. The detection voltage is internally fixed with an accuracy of 1.0%. The NJU7704/05 are useful for preventing malfunction of

Contextual Info: NJU7704/05 VOLTAGE DETECTOR GENERAL DESCRIPTION The NJU7704/05 is a low quiescent current voltage detector featuring high precision detection voltage. The detection voltage is internally fixed with an accuracy of 1.0%. The NJU7704/05 are useful for preventing malfunction of

f43a

Abstract: f45a NJU7704 NJU7704F NJU7705 SC88A F19A
Contextual Info: NJU7704/05 VOLTAGE DETECTOR GENERAL DESCRIPTION The NJU7704/05 is a low quiescent current voltage detector featuring high precision detection voltage. The detection voltage is internally fixed with an accuracy of 1.0%. The NJU7704/05 are useful for preventing malfunction of