F3 SMD Search Results

716296

Abstract: 6 PIN SMD IC FOR SMPS f3 double diode smd 1812B104K501 Finepower 716296 ICE3A0365 smd diode p80 650V-CoolMOS pin SMD IC FOR SMPS circuits zener diode 6w
Contextual Info: Application Note, V1.1, Apr 2006 AN-EVALM-ICE3A0365 6W 12.5V SMPS Evaluation Board with CoolSETTM F3 ICE3A0365 CoolBIAS-F3 Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2006-04-11 Published by Infineon Technologies Asia Pacific, 168 Kallang Way,

Contextual Info: Bill of Materials for the NCN7200MTGEVB Evaluation Board Designator Quantity Description U1, U2 J1, J2, J3 J4, J5 J6 J7, J8, J9, J10 J11, J12, J13, J14, J15, J16, J17, J18 C1, C9 C2, C3, C4, C5, C6, C7, C8, C10, C11, C12, C13,C14, C15, C16 F1, F2, F3, F4 F1, F2, F3, F4

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP KP-1608F3C Features Description ! 1.6mmx0.8mm ! LOW SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. POWER CONSUMPTION. ! WIDE ! IDEAL VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. ! VARIOUS ! PACKAGE

APL3015F3C

Abstract: L3015F
Contextual Info: 3.0x1.5mm SMD CHIP LED LAMP APL3015F3C Features Description z3.0mmx1.5mm SMT LED, 1.4mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting zLOW POWER CONSUMPTION. diodes. zWIDE VIEWING ANGLE. zIDEAL FOR BACKLIGHT AND INDICATOR. z VARIOUS COLORS AND LENS TYPES AVAILABLE.

Contextual Info: 3.5x2.8 mm SMD CHIP LED LAMP KA-3528F3C Features Description !SINGLE COLOR. F3 Made with Gallium Arsenide Infrared Emitting ! SUITABLE diodes. FOR ALL SMT ASSEMBLY AND SOLDER PROCESS. !IDEAL FOR BACKLIGHTING. ! AVAILABLE !PACKAGE ON TAPE AND REEL. : 1500PCS / REEL.

KPL-3015F3C

Contextual Info: 3.0x1.5mm SMD CHIP LED LAMP KPL-3015F3C Features Description !3.0mmx1.5mm SMT LED, 1.4mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting !LOW POWER CONSUMPTION. diodes. !WIDE VIEWING ANGLE. !IDEAL FOR BACKLIGHT AND INDICATOR. ! VARIOUS COLORS AND LENS TYPES AVAILABLE.

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP AP1608F3C Features l 1.6mmx0.8mm l LOW l WIDE SMT LED, 1.1mm THICKNESS. POWER CONSUMPTION. l IDEAL Description F3 Made with Gallium Arsenide Infrared Emitting diodes. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. l VARIOUS l PACKAGE

AA3528F3C

Abstract: F3 smd
Contextual Info: 3.5x2.8 mm SMD CHIP LED LAMP AA3528F3C Features Description zSINGLE COLOR. F3 Made with Gallium Arsenide Infrared Emitting z SUITABLE diodes. FOR ALL SMT ASSEMBLY AND SOLDER PROCESS. zIDEAL FOR BACKLIGHTING. z AVAILABLE zPACKAGE ON TAPE AND REEL. : 1500PCS / REEL.

Contextual Info: ECS-P8 F3 X /P8 F5 X Low Voltage HCMOS Industry Standard Footprint PLL technology RoHS Compliant SM D PROGRAM M ABLE OSCI LLAT OR ECS-P8F3X 3.3V and ECS-P8F5X (5V) J-Lead SMD PLL based programmable crystal oscillators. OPERATING CONDITIONS / ELECTRICAL CHARACTERISTICS

AA3021F3S-100MAV

Contextual Info: 3.0x2.0mm INFRARED EMITTING DIODE Part Number: AA3021F3S-100MAV Features Description z 3.0mm x 2.0mm, 1.4mm high, only minimum space required. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor.

AA3528F3S

Contextual Info: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.

AA3528F3S

Abstract: smd diode f3
Contextual Info: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.

Contextual Info: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.

AP3216F3C

Abstract: diodes v6 16
Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: AP3216F3C Features Description z 3.2mmx1.6mm SMT LED, 1.1mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Low power consumption. z Wide viewing angle. z Ideal for backlight and indicator. z Various colors and lens types available.

Contextual Info: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.

Contextual Info: Series MCX - 50 Q Winkelkuppler Right Angle Jack Part Number I Footprints Remarks SMD Packing Unit 100 29 K 203-40M F3 on request Abschluss-Stecker Termination Plug Part Number Remarks Packing Unit 29 S 15R-0.5 E3 0.5 W; 0 - 4 GHz, VSWR < 1.2 1 14.2 Termination Jack

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C 2 3 RELEASED FOR PUBLICATION LOC 1.27 TYP 3 REVISIONS DIST H ALL RIGHTS RESERVED. COPYRIGHT 1 - P DESCRIPTION LTR F3 DATE APPLICATION SPECIFICATION NUMBER ADDED DWN KJK 24JUL2013 APVD RP D D PACKAGING/REELING DIRECTION 3:1

mosfet 12w smd

Abstract: ICE3B0565J transistor SMD 12W MOSFET 12W SMD MOSFET ICE3B0365J transistor SMD 12W schematic diagram AC to DC converter 12W .68k 275V-X2 ICE3B0565 equivalent transistor sl100
Contextual Info: Application Note, V1.0, Sep 2005 AN-EVALSF3-ICE3B0565J 12W 5.0V SMPS Evaluation Board with CoolSETTM F3 ICE3B0565J Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2005-09-26 Published by Infineon Technologies Asia Pacific, 168 Kallang Way,

ICE3A1065LJ

Abstract: smd diode r4a 24V 3A SMPS circuit diagram 24V 4A SMPS circuit diagram .68k 275V-X2 zener diode application capacitor 4.7uF 400V 0.1u 275V x2 capacitor 47uF/400V ICE2xXXX
Contextual Info: Application Note, V1.0, Sep 2006 AN-EVALSF3-ICE3A1065LJ 15W 5.0V SMPS Evaluation Board with CoolSETTM F3 ICE3A1065LJ Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2006-09-29 Published by Infineon Technologies Asia Pacific, 168 Kallang Way,

1048C

Contextual Info: Specifications ispLSI and pLSI 1048C ispLSI and pLSI 1048C ® High-Density Programmable Logic Functional Block Diagram Output Routing Pool Output Routing Pool F7 F6 F5 F4 F3 F2 F1 F0 E7 E6 E5 E4 E3 E2 E1 E0 D7 A2 A4 IG N D Q Logic Global Routing Pool GRP

smd u2.8

Abstract: FBMA-L11-201209-221LMA30T 7W48000078 FBMA-L11 LS-354BP compal k2 board Compal Electronics DC02000 J11P1 SMD K13
Contextual Info: 5 ZZZ1 4 3 2 ZZZ2 1/24 modified to DC02000E400 PCB 9/20 Place closed to L007 +1.8V_I +A1.8V +PA1.8V +PA3.3V +3.3V_I FFC 45@ F3 RX_MODE PAD PAD PAD G14 K11 L11 L12 L13 F11 K12 J11 OSDCKI OSDE OSDI OSDI OSDI OSDCKO OSDVSBO OSDHSBO T1 T2 T3 TEST0 TEST1 TEST2

1048C

Contextual Info: ispLSI and pLSI 1048C ® High-Density Programmable Logic Functional Block Diagram Output Routing Pool Output Routing Pool F7 F6 F5 F4 F3 F2 F1 F0 E7 E6 E5 E4 E3 E2 E1 E0 D7 A2 A4 IG N D Q Logic Global Routing Pool GRP A5 A6 A7 D B0 B1 B2 B3 B4 B5 B6 B7

smd diode marking F1

Abstract: CDST193-G QW-B0028 SMD diode NC f3 diode sot23 DIODE smd marking A3
Contextual Info: coiUCHir SMD Switching Diode SMD Diodes S pecialist ♦ CDST193-G RoHS Device Features -L o w fo rw a rd v oltage: V f = 0.9V Typ. -F a s t reverse re co ve ry tim e: t r r = 1 .6nS (Typ.) Polarity: 1. a n o d e 2. N.C. 3. C AT H O D E M a r k i n g : F3

Contextual Info: 5MK MINI JACK*POWER JACK PHONE JACK DC POWER JACK/PLUG • E IA J $ te R C - 5 3 2 0 A lC « U T U n -l'U - -£ f3 ;l, tc LGA 2519-3200 • LGA 2519-3101 S p e c ific a tio n s • C ontact Resistance!30mQ max. • Insulation Resistance! 100MD min. at 500V DC