F2 DIODE Search Results

SKKD 80

Abstract: skkd 330 skkd80 sknd 40
Contextual Info: SEMIKRDN Section 2: SEMIPACK Fast Diode/Thyristor Modules Summary of Types Type Circuit V drm V rrm Itrm s Ifrms Ita v Tease I fav 10 ms 25 °C •New Type SKKD 40 F SKKD 42 F SKKD 50 E • SKKD 60 F2* • SKKD 75 F2* • SKKD 80 F2* SKKD 105 F SKKD 115 F

Contextual Info: SANKEN ELECTRIC CO., LTD. SJPX-F2 1. Scope The present specifications shall apply to an SJPX-F2. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 060414 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

Contextual Info: DBI 25 KN<YS KNNY KKNY< $P W >F 8 E^- W ]> ABG B, C N,/1 K >@@ M@@ ¥@@ J>@@ K JM@ >¥@ F?@ ¥@@ ^95*% PH$ >F2@> PH$ >F2@M PH$ >F2@¥ PH$ >F2J> TU _ @SJF @S] @SZ J J?@@ J@@@ PH$ >F2J? Symbol Conditions Values Units $P ^( W M? ABS VJ[J>@S 1( 63(' -&&'/1; ^( W M? ABS -0(%%/%>G

"infrared led" 980 nm

Abstract: "infrared led" 800 nm 980 nm IR908-7P infrared LED white Infrared Emitting Diode Pink
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIR-090-175 REV : 1.0 PAGE : 1/7 Infrared LED MODEL NO : IR908-7P/F2
Features :
Low forward voltage
Peak wavelength p=940nm
High reliability
Description :
The IR908-7P/F2 is a GaAs GaAlAs infrared emitting diode. The miniature side-facing

"infrared led" 800 nm 980 nm

Abstract: "infrared led" 980 nm infrared DIR-090-041
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIR-090-041 REV : 1.2 PAGE : 1/7 Infrared LED MODEL NO : IR908-6C/F2
Features :
Low forward voltage
Peak wavelength p=940nm
High reliability
Description :
The IR908-6C/F2 is a GaAs GaAlAs infrared emitting diode. The miniature side-facing

426L1

Abstract: 721L1 409L1 620L1 621L1 412a 432I2 726L1 620-L1 410G2
Contextual Info: 4. Options Overview All versions: High-side switch, input protection, ESD protection, reverse battery protection monolithic devices with 150 Ω in GND connection Type 307 308 412A 413A 412B 410D/D2 410E/E2 410F/F2 410G 410H 432I2 409L1 707 412B2 432D/D2 432E/E2 432F/F2 410G2 410H2

Contextual Info: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datash eet <Revision 2.5>, 21.01.2013 Indust rial Po wer & Con trol Edition 21.01.2013 Published by Infineon Technologies AG

CIRCUIT DIAGRAM FOR gsm modem with sim 300

Abstract: gsm modem with sim full schematic circuit diagram gsm circuit diagram project sim 300 gsm module sim gsm modem circuit diagram microcontroller interface with gsm module gsm modem sim 900 IEC 68-2-29 MS 1307 sim card holder smd
Contextual Info: GSM/GPRS Embedded Data/Fax/Voice Wireless Modem MTMMC-G-F1 MTMMC-G-F2 Developer’s Guide ModemModule Developer’s Guide MTMMC-G-F1 and MTMMC-G-F2 PN S000295A, Version A 07/15/03 Copyright This publication may not be reproduced, in whole or in part, without prior expressed written permission from

Contextual Info: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datash eet <Revision 2.4>, 04.09.2012 Indust rial Po wer & Con trol Edition 04.09.2012 Published by Infineon Technologies AG

6ED003L06F2

Abstract: 6ED003L02-F2 6ED003L06-F2 PG-TSSOP-28
Contextual Info: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datash eet <Revision 2.3>, 21.08.2012 Indust rial Po wer & Con trol Edition 21.08.2012 Published by Infineon Technologies AG

Contextual Info: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datash eet <Revision 2.2>, 16.03.2012 Indust rial Po wer & Con trol Edition 16.03.2012 Published by Infineon Technologies AG

6ED2

Contextual Info: EI CE D RI V ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 6EDL04I06PT 6EDL04I06NT 6EDL04N06PT 6EDL04N02PR EICEDRIVER™ Preli mina r y datas he et <Revision 1.1>, 08.08.2011 Preliminary

6EDL04N02

Abstract: PG-TSSOP-28 MIPI bridge 6EDL04I06P
Contextual Info: EI CE D RI V ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 6EDL04I06PT 6EDL04I06NT 6EDL04N06PT 6EDL04N02PR EICEDRIVER™ datash eet <Revision 1.2>, 28.08.2011 Preliminary AS IC & P owe r I C

Contextual Info: Eic e DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datas h eet <Revision 2.5>, 21.01.2013 Indus t rial Po wer & Con trol Edition 21.01.2013 Published by Infineon Technologies AG

IL-C9-0512

Abstract: Dalsa tdi IL-C2-0512 tdi ccd dalsa tdi ccd tdi ccd 512 F2 Series IL-C3-0256 Dalsa line scan sensor
Contextual Info: MSE D y' y / V i/ • s b is im ooooaas DALSA INC. oti « hals IL-E1/F2 Series TDI QUIETSENSOR CCD Image S e n s o rs IL-E1/IL-F2 Series Two Dimensional Image Sensors for TDI Applications mlsa inc • 2048, 1024 & 512 Pixels with 96 TDI Stages • Bi-directional operation in the

Contextual Info: DACO SEMICONDUCTOR CO., LTD. M U R F2 0 0 0 5 R THRU M U R F2 0 0 6 0 (R ) SUPER FAST DIODE MODULE TYPES 200A 200 Amp Rectifier 50-600 Volts Features High Surge Capability T y p e s Up to 6 0 0 V V rrm Full Pack A 4 - Maximum Ratings Storage T e m p e ra tu re :-55 C to + 1 7 5 ° C

coolsettm-f2

Abstract: ICE2A380 ICE2A380P2 coolsettmf2 K X365
Contextual Info: D a t a s h e e t V e r s i o n 0 .0 , 2 3 S e p 2 00 4 CoolSET -F2 ICE2A380P2 Off-Line SMPS Current Mode Controller with integrated 800V CoolMOS™ Power Management & Supply N e v e r s t o p t h i n k i n g . CoolSET™-F2 ICE2A380P2 Revision History:

50A ZENER

Abstract: 32V zener E50A37VPS alternator diode 50a alternator diode
Contextual Info: SEMICONDUCTOR E50A37VPS, E50A37VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES E Average Forward Current : IO=50A. Zener Voltage : 37V Typ. L2 F1 POLARITY E50A37VPR (+ Type) (- Type) B L1 G E50A37VPS

Contextual Info: SEMICONDUCTOR E35A2CPS, E35A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. E L2 Reverse Voltage : 200V Min. F1 L1 G POLARITY B E35A2CPS (+ Type) E35A2CPR (- Type)

L2 zener

Abstract: E30A23VPR E30A23VPS
Contextual Info: SEMICONDUCTOR E30A23VPS, E30A23VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. E L2 Zener Voltage : 23V Typ. F1 POLARITY E30A23VPR (+ Type) (- Type) B L1 G E30A23VPS

Contextual Info: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. POLARITY L2 E F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)

Contextual Info: SEMICONDUCTOR E35A21VPS, E35A21VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. L2 E Zener Voltage : 21V Typ. F1 POLARITY E35A21VPS (+ Type) B L1 G E35A21VPR (- Type)

E25A2CPR

Abstract: E25A2CPS
Contextual Info: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. E POLARITY L2 F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)

alternator diode

Abstract: alternator diode 50a E50A2CPS
Contextual Info: SEMICONDUCTOR E50A2CPS, E50A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=50A. E L2 Reverse Voltage : 200V Min. F1 L1 G POLARITY E50A2CPS (+ Type) B E50A2CPR (- Type)