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    F1001C Search Results

    F1001C Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    F1001C
    Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF 33.51KB 2
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    F1001C Price and Stock

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    Cal-Chip Electronics RM04F1001CT

    RES 1K OHM 1% 1/16W 0402
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    DigiKey RM04F1001CT Reel 60,000 10,000
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    Component Electronics, Inc RM04F1001CT 1,500
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    Panasonic Electronic Components ERJ-1GJF1001C

    RES SMD 1K OHM 1% 1/20W 0201
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    DigiKey () ERJ-1GJF1001C Digi-Reel 26,249 1
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    ERJ-1GJF1001C Cut Tape 26,249 1
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    ERJ-1GJF1001C Reel 15,000 15,000
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    Mouser Electronics ERJ-1GJF1001C 29,337
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    TTI ERJ-1GJF1001C Reel 15,000 15,000
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    Master Electronics ERJ-1GJF1001C
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    Cal-Chip Electronics RM10F1001CTG

    RES0805 1% 1K OHM
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    DigiKey () RM10F1001CTG Digi-Reel 20,000 1
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    RM10F1001CTG Reel 20,000 20,000
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    Cal-Chip Electronics RM10F1001CT

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    DigiKey () RM10F1001CT Digi-Reel 7,520 1
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    RM10F1001CT Cut Tape 7,520 1
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    RM10F1001CT Reel 5,000 5,000
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    Bristol Electronics () RM10F1001CT 32,984
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    RM10F1001CT 5,000 45
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    RM10F1001CT 3,500
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    Component Electronics, Inc RM10F1001CT 7,000
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    Cal-Chip Electronics CAS10F1001CT

    ANTISULF RES0805 1% 1K OHM
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    DigiKey () CAS10F1001CT Reel 5,000 5,000
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    CAS10F1001CT Digi-Reel 5,000 1
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    CAS10F1001CT Cut Tape 5,000 1
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    F1001C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F1001C

    Contextual Info: polyfet rf devices F1001C General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier


    Original
    F1001C F1001C PDF

    Contextual Info: polyfet rf devices F1001C PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


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    F1001C 1110AvenidaAcaso, PDF

    RESISTOR NETWORK SMD 8 PIN array isolated 2512

    Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
    Contextual Info: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011


    Original
    88EM8011 MV-S104861-00, 88EM8011 MV-S104861-00 RESISTOR NETWORK SMD 8 PIN array isolated 2512 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606 PDF

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 PDF