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F1060
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Polyfet RF Devices
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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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37.82KB |
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F1060
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Polyfet RF Devices
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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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37.74KB |
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F10-600
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Triad Magnetics
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Transformers - Power Transformers - XFRMR LAMINATED THRU HOLE |
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67.31KB |
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F10-600
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MagneTek
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TRANSFORMER, SPLIT BOBBIN, PC MOUNT, SINGLE PRIMARY, 6.0VA, 10.0V CT |
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56.88KB |
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F10-600-C2
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Triad Magnetics
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Transformers - Power Transformers - XFRMR LAMINATED 6VA THRU HOLE |
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151.86KB |
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F10-600-C2-B
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Triad Magnetics
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Power Transformers, Transformers, XFRMR LAMINATED 6VA THRU HOLE |
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MURF1060CT
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JCET Group
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MUR1060CT and MURF1060CT are super fast recovery rectifiers in a TO-220F package, with a 600 V peak repetitive reverse voltage, 10 A average rectified output current, 35 ns reverse recovery time, and 1.3 V typical forward voltage at 125 °C. |
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SBDF1060CT
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JCET Group
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SBD1060CT and SBDF1060CT are 60 V Schottky barrier rectifiers in TO-220-3L/TO-220F packages, with 10 A average rectified output current, low forward voltage drop of 0.56 V at 125°C, and non-repetitive surge current up to 120 A. |
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SF1060CT
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Microdiode Semiconductor
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Reverse Voltage: 100-600V, Forward Current: 10.0A, Low leakage, High surge, 250°C soldering, TO-220AB, 2.24g. |
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MURF1060CT
