F JR Search Results

Contextual Info: C O IL : @ 2 5 °C R NCF n FCSjIS l j TI A MINLu NOMINA! VOI T A O F 26 5 VDC 1^ ‘2 VDC MUST O P F R A T F ^ .3 VDC MAX- O A T F T U R N -O F F ° '5 VDC MAX- r f if a s f 8 -0 VDC M A X , 1 .3 0 V D C 10 SHO CK 75 t f m p f r a t i jr f rp s to g 's -6 5

Contextual Info: £ ^ # íS r s s í i S f p 4 ? i H jr ^ - n a ft. m & - * P f f l ï » 5 ï 3 . « K O f f l t f Æ ï É B , fê fc lÆ T Æ Ê ffiB - mmñ ,8 iü * ft & 8 . « í é e j p w •J î î l l ^ T O p æ t l ^ f f f . —s c 0,ÛS-20 1 -2 0.06 0.1 o.os o.os

bf 0252

Abstract: 07754 75115 31-157 X963 HP T108 T930
Contextual Info: MP A 20 SfëlÉïIUliÉ&Sl^ NEC pPA 20 i t DTL -y y - X c O ' f - b Jr~ F r i" { X " t o y / - t L'"C§£jf- - K Ä ä O Ä i S ^ 'f „ f - v W 7 / K 8 f@i ¡9 & 9 /¿PB 1, /¿PB 2 fe J; xß /¿PB 8 O A Í I t - -9.4 -8.5- * - K t, s r f f t 7 T v - f v * i g - f I f t K i f ê Æ - c t * - to S í

L1753

Contextual Info: • ON %-n b DATE JR f t REV. 3ZZ8É0PS 1.Nov.2010 2 ONIMVüa ##Ma DCN NO. REVISED W. M f l & D E S C R IP T IO N PLA TIN A S P E C IF IC A T IO N « £ H APPD . m i CHK. m DR. u APPD. K.H ISAMATSU 071003 V ± .3 3 8 .8 5 25 ±o. 1 5 ± 0 .1 5 29 No.1 L t t j w j ì f w I f w w w ì f ì f w w W t f I f i r w w t i" r f w i f w i f t f n - n - r f T frfj^ :

Contextual Info: REV. 0 DCO 141423 COIL: @ 25°C CUSTOMER DATA SHEET 2000 OHMS ±10% M UST O P F R A T F 2 6 5 VDC 14.2 VDC M UST R FI F A S F 8.0 VDC MAX. 1.37 VDC MIN. NOMINAI V f!! T A R F ENVIRONMENT: VIB R A TIO N 10 shock 75 T F M P F R A T I JRF M DTFS- CPS TO n' n

sext

Abstract: tlcs-870 series instruction set TLCS-870 0013DH C12AH D61CH nmm-11 tlcs-870 series instruction set toshiba tlcs 870 c series call TLCS-870 MNEMONIC
Contextual Info: TO SH IB A TLCS-870/X 6 JUMP MNEMONIC JRS T, a JRS F, a JR JR T, a F, a JR EQ, a or JR Z, a JR NE, a or JR NZ, a cY FLAG OBJECT CODE c OPERATION Binary j f : z f :c f :h f : s f :v f EL Hex-decimal 1: 3/2 if JF = 1 then PC«—PC + d else null 100d dddd

NJM2208

Abstract: 74LS04 CNJM2208 NJH2208 NJM2208D NJM4560 NJMZ208 NJN12208
Contextual Info: NJM2208 Ç jR < g 3 R F ï ÿ a U — ^ s 1 w • ÍI NJM2208 l i NT SC * 7 —TVffl £ L T l x I t è ftfcSGSliHïffl I C T '- f o 3.58MHzfêÎI?5, 4.5MHzSSiIS§, 3.58 M H z ÿ P 7 + f ' J 7 ' J - K 7 ^ ' y Y ^ - f , RFflÎMSI, R F S ü it l X i f f a - f - f i t & I H Ü i ' t ' # %i T T L 3 > y\zF -7' J l-? □ "j 9 K 7 - f ^ <

R1-R12

Abstract: SDMP30 NJM2184 NJM2184L NJM2184M SDIP28 S M filter HF
Contextual Info: Ej r NJM2184 <3 FC# CUS BY S R S A / V L A B S F o c u s F i i f — il' I • x L / K — £/ 3 > ;j- — = r4 ■#1> » NJM2184 l i N SRS Focus & Îl5 £ f ê f f l L f= A/V Focus F i l t e r t°— * u * - '>3 >Jr- 7 :'r*J'n-tv+)-<;\ ÏÏ&ÊiÉé&*,±tf&z

2SK1953

Abstract: TRANSISTOR BH RW ic 7905 7905 aj 55 ng nec 7905 7905 nec KA 7905
Contextual Info: M O S f fi^ J I ^ ^ ^ - M O S FET M O S F ie ld E ffe c t P o w e r T ra n s is to r 2SK1953 N f t ^ / '° 7 -M O S FET I i f f l 2SK1953 ¡i N f- ^ — MOS F E T T" Jr >ffiÎÆ *s'ffi < -y j- > £ > ,W,JI]&X -i 7 f > ^ " I l i l ^ D C - D C a > ' < — ÿ lz-Hk$.X"-fo

IR3M02A

Abstract: 1R3M02 IR3M02 ir3m02an IR3M02N IR9494 S-25 rsS85
Contextual Info: - 25 5 “ IR3M02,IR3M02N,IR3M02A,IR3M02AN x-f — t 'f t W t E 1S& • * * ; & v f y j ' ' *8*11 5 . « l6 W I ' — F ee C ± I R 9 4 9 4 C f f i A * B # e i ! e f / P E S jh [a ]i& F m K jr r 4 - # in U fc fc < D X -* S . I R 3 M 0 2 / N i I R 3 M 0 2 A / A N ( i H f » * * t l « 0 8 t t Ä ‘' S i : 2> .

2SA1650

Abstract: transistor 7929
Contextual Info: V U = 3 > / \ ° '7 - h 7 > v 7 $ Silicon Pow er Transisto r 2SA1650 nmm 2SA 1650& , Ü i S ^ ' f •I S S I S I fâ jR W Œ ^ ttC / J v S < £ 3 ÿ>v7.$?t0 ï- ÿ F 7 'f ^ , ü ffi : m m K a ”7 - h vïX/MM, DC-DC=i> / < - * , V U / - f h 'K 7 - f * « > 1 X - f- y ? >

dj rm

Contextual Info: NJM2606/2606 A E jR < d 3 V, NJM 2606 là , 'M Ü DC 6 V f f l ï - ^ - 3 y h □ -/H ilft ? c 7 ü S iJ fP ffl» W m S & T t o « ] f É ® ; I I ® ± S Ë f f l t f j £ < 3 V f f l, e V J K a ' J 'M D C i - ÿ O T â J t S I tito , / J 'ÿ •4t NJM2606 A l i ,

4 digit up down counter

Abstract: TC5054P BCD-TO-7-SEGMENT DECODER
Contextual Info: - 240 — 5054 4 Digit Up/Down Decade C ounter Q f -J ^ # 8 S -t» 3*' 7 A io ìì 4ftr t ftr & 7 'jr H r 'j- f e / h tc L 3 A f— h pnn m x a v + 's r m • 7 - t ^ y t - « n S f f i» T 3 - / t H 7 'f ^ 'S r r t * U c 4 # f » r '/ 7 - ■ r - / r t f fl ' y n 7 - a ~ , 9

Contextual Info: fÊTfc# -f LB-602 AK2 Series K /L ig h t Emitting Diodes LB-602 A K 2 S e rie s • LB -602 v ' J - X « , High-Efficiency Numeric Displays /Dim ensions Unit : mm R B S t 'S f if r T f c t e f f lT ' £ 5 Jr 9 C x i f < > £ t i t L E D S S S T t. (0 .6 O

Contextual Info: D O F —O—212 E 0 3 . 0 8 s-n b JR f t REV. DON DAT E W. K ñ S DESCRI PTI ON NO. n m DR. % s m APPD. C HK . T A B L E- 1 E1. S U F F I X R1 0 0 0 ’ O F W R - F L * * P-H F-HD-A 1 E THE L E V E L . IN WHICH PART FEED PITC H ARE MARKED IS 3. R E FE R

Contextual Info: 5BULGIN FUSEHOLDERS In-Line PCI and In-Line Sealed to IP66, PCI »% ^ i f f Mt Jr F X 0180, F X 0 2 8 0 , F X 0380 £ 4 § %# * $ $ § $ • * * * • ^ # 1 $ ? ’* * m »i " •* " V * I * fifes • Protection Category PCI ■ Fuse Sizes 5 x 20 m m ,

NJM2116

Abstract: NJM2116M NJMZ116V
Contextual Info: NJM2116 g jR C l 6 mm, 0 S 9 NJM2ii6ii, & A U s j ì :s S Ì S , « i h ìo ì 1 * « b s M *>! 6 l a s s i l i » s n f c i c x - T o itz, f i t i s 7 ? f - f ^ 7 - f J b nmTTnritt&ìM, K & r v t im ?, i f (fax , 7 - r > F 7 < / i , H D T V ^ ? r ( i l : * i ; L T X K Ift;PJJffl(7)-9-

NJM2115M

Abstract: NJM2115V NJM2115 NJM2115D NJM2115L NJNI2115 LIF 4117
Contextual Info: NJM2115 C JR c l l i 'f tti&WBLWifE NJNI2115 +I.OVMIN , 2.5 V « S ' T ' ± 2.0VP_ p ) £ W M 1 1 % 5 v ip .— 9 ~f JlsCD, fc 7v*-b C D , ii £ m £ f§ * n t H * iiJ ± ^ T > 7 °X’t % (+ . x r j + f r t £ f t t i <m j ± * M W t r & t f - r f - ? y j U D A T ^ O T x V i t ? J l s * — 7 , '(

AL5V

Abstract: NJM317DL1A NJM317F NJM317DL1 NJM317
Contextual Info: NJM317 E jR < g 3 NJM317t í , ^ i U I ^ • y y c H W L f c f c H * « J Œ ô r ü S ! < 7 iE t H * 3 S * ^ - U - ^ i c T - f o v . tati a 1^ TO -220F) ( T O -2 5 2 ) i. 25 V ( m m ) f c C <t U I . 5 A ? 7 * <7) A ' b 37V S T - o I ^ T - # , HtJ * « ¿T l (Z T f ê f f l B i t I 'V t o

CA927

Abstract: NJM2189 NJM2189L NJM2189M SDIP30 SDMP30 1KS3 5C833
Contextual Info: NJM2189 F « C U S BY 5 R S A / V m m L A B S F O C U S Fi I t e r t t ^ r X t°— f i — x i s K — i / 3 >;J-— a n m Jr J r Z f n - t e y y - % Ltz A/V FOCUS F i I t e r t t ^ X N J M 2 1 8 9 liS R S FOCUS & iff i t . ¿b K A / V FOCUS F i l t e r £ f l « E L T f c y ,

F0236

Abstract: PA33 T108 T460 ALF LI 1-4 NY AA1L3Z HE1 NEC 611EG
Contextual Info: NEC - jr S — ’ S '— S Com pound T ran sisto r m * = jr l\X J , if # AA1 L3Z » o 7 ' < >f £ f t jg j L T ^ £ 1 ~ t R i = 4 .7 k£> 'O A N 1 L 3 Z t 3 > 7 ° ij / > 9 'J T ' f ê f f l T ' ë i f , » # * * £ » ( T a = 3 •X ; -y ^ °C ) »& @

M57962AL

Abstract: applications of ujt IGBT with V-I characteristics UJT APPLICATION TDS340A PC817 ujt transistor am503s IGBT 10 A igbt high power
Contextual Info: 2000 * m 5 gj IGBT Miihfc B p A -^ i f c t f c l * # 200331 tt# Ä . * à iitfc T Î* IÇ Â Æ + W a * # « , $ f t i 3 IGBT & £ £ # £ : ! * 3B# tfTC, 1 31 la & ä fc # jR S J I f r f IGBT (Insulated Gate Bipolar Transistor) ;êlÉJ BIT MOSFET älj&ÖilSi'ä'

MB47833

Abstract: LM833A LM833N LM833 833n LM833-N diode zener c26 AN1833 NJM2041 PC4570
Contextual Info: - 258 - LM833/A 2 » , i * f National Semiconductor •H 5nV/^Hz # X ; l / - U - I- : 7 V /u s • T H D : 0 . 002* S W LM833A S f i V s= ± 1 5 V t i T a = 2 5 ‘C a - ft m - f f i iJl f t ff S M m n a HOT:LM833 g±ffi:MB47833 &T:AN1833 m JRC:NJM2041

NJM2262

Abstract: NJM2508
Contextual Info: N J M 191 - JRC 2 2 6 2 Iffit m N JM 2 2 6 2 [ä, -f > rK— XHrf.cTD Y f e '< i^ 4 M Î & , 2 A* C 1 H '« r^ 1 • X —' tr- r':* • x -f y • -f > ,-ft — -tflC. £ J*3i 4 # « • *#«• C f r T 'J - M l l ü l S S i O t ' - r ^ • X ^ y f ^ i * ] ! .