F 7962 Search Results

R2A15218FP

Abstract: R2S15201 r2s15904sp R2S15205FP R2A15218 R2A15108SP R2S15201DD r2a15108fp R2A15906SP R2A15106NP
Contextual Info: 2007.10 Everywhere you imagine. ^ ICs for audio products w w w .re n e sa s.co m JUT'ltTviD^ —x -f :* IC R e n e s a s I C s for a u d io p r o d u c t s p ro v id e y o u r s y s t e m w ith o p tim u m p r e s e n c e . I7 > 5 1' y ^ ' i b T < D ^ S s f f i j g * « * f c f c f c 5 3 / « '> 7 > ^

r2s30201fp

Abstract: R2S30208SP M63043FP R2S30207SP R2s30202fp r2s30206sp r2s30201 R2S30200FP M66005 r2s3
Contextual Info: 2006.10 Everywhere you Imagine. www.renesas.com % 9 4 7s V 0 ffi m • ffiI» Jf i t £ ft j£ t %> Renesas ICs for optical discs supporting the high-speed and high-precision performance. á S á ' S 4 ' 1 f l S f é l r t ^ ^ 7 ¿ : U T f i J f f l ^ / S ^ o T U ^ ^ 7 ?' r 7 . ^ m * o C D - R / R W ^ D V D 4 ' ¿ : V = l - ^ \

Contextual Info: HKT100*F/HKT100Y01F µ-Chip RFID REJ03P0002-0100 Rev.1.00 Feb 16, 2006 Overview • HKT100*F/HKT100Y01F is RFID (Radio Frequency Identification) for 2.45 GHz. • It has a unique ID inside, then it is applicable for management of individual object. Note: "*" or "Y01" is a ROM code.

BB506M

Contextual Info: BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise NF = 1.4 dB typ. (f = 900 MHz)

Contextual Info: EL7962C/EL7972C/EL7982C F e a tu r e s G en era l D e sc r ip tio n • P r o g r a m m a b le d e la y T h e E L 7 9 6 2 /7 2 /8 2 p r o v id e s 1.0A o f p e a k c u r r e n t f o r m a n y d r iv e r a p p lic a tio n s . T h e r i s i n g e d g e o f t h e o u t p u t c a n b e d e ­

stk 412 -410

Abstract: stk 412 -420 StK 412 230 Am2942 TLC-292A stk 490 110 programmable pipeline microcode memory STK 412 microprogram stk 412 220
Contextual Info: ^ /V / Am29112 ' ? 5y n c /w rrw cTl^ -i A £^t i'V u i? _ i ^ ^•9 - f ' r-A" 4 s ^ x 4 ,-th ¿ " V ij i£ ^ 0 | 'n — <£f j u y . f tv A High-Performance 8-Bit Slice Microprogram Sequencer . ADVANCED INFORMATION ->2 fc^ p n o o /£ _

OV7962

Abstract: SOL 28 m TDA 7962
Contextual Info: EL7962C/EL7972C/EL7982C r liin t r r ! >v.v.'i' ••■.t ■ f i . - _ D ual R isin g Lidtjc D cloy H rii ct_ | Features General D escription • • • • • • • • T he E L 7962/72/82 provides 1.0A of peak cu rren t for m any

dk qw

Contextual Info: 9ROW7KH/RJLF+LJKZD\9ROW VXEQVRQO\ $/% 6SHHGPD[QV 'ULYHP$ 3RZHUX$P$  SHU%XIIHU :LGHEXV VXEQVRQO\ $%7 QV 6SHHGPD[ RFWDOV PD[ :% 'ULYHP$ 3RZHUX$P$ 2FWDOV:LGHEXV70

bosch servo module SM 10/20

Abstract: HD6432612 ndr 550 HD64F2612 mar 552 Nippon capacitors 3 phase ac Induction motor speed controller ic bosch sm ac drive bosch sm drive PCR 406 J
Contextual Info: REJ09B0211-0600 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2612 Group, H8S/2612 F-ZTAT

H8/3052

Abstract: mar 808 HD64F3052BF HD64F3052F p-qfp100-14x14-0.50 mar 552 PCR 406 J transistor pcr 606 j HD64F3052BTE HD64F3052BVF
Contextual Info: REJ09B0302-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8/3052B F-ZTAT Hardware Manual

RQA0009TXDQS

Abstract: RQA0009 RQA0009TXTL-E REJ03G1520-0100
Contextual Info: RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting

4435* mos

Abstract: A18E PCR 406 J put 1 transistor pcr 606 j HD64F2667 MOV RDN 240/ 12 PCR 606 J ng52 Hitachi DSA00247
Contextual Info: REJ09B0281-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2668 Group, H8S/2667 F-ZTAT

811 0305 01

Abstract: ic 747
Contextual Info: HSG2004 SiGe HBT High Frequency Medium Power Amplifier REJ03G0484-0400 Rev.4.00 Jun 21, 2006 Features • High Transition Frequency fT = 30 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +14.5 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

2SK2595AXTB-E

Abstract: 2SK2595AXTB 2sk2595 2SK2595AX b 857 RENESAS marking code u 172 zo 107
Contextual Info: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0401 Rev.4.01 Jan 30, 2006 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. f = 836.5 MHz • Compact package capable of surface mounting

Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting

Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting

RQA0009SXAQS

Abstract: RQA0009 RQA0009SXTL-E RQA0009SX c5 marking code 1747 C13
Contextual Info: RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting

P54DR

Abstract: ir receiver module sj 1838 mmc 304 SANDISK 16bit RFT Semiconductors gsm model DBAS 74 61 SERVICE MANUAL SANYO sram book free transistor equivalent book Sanyo
Contextual Info: REJ09B0286-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2158 Group, H8S/2158 F-ZTAT

30S124

Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

Contextual Info: Preliminary RKZ-KV Series Silicon Planar Zener Diode for Constant voltage regulator REJ03G1700-0100 Rev.1.00 Feb 10, 2010 Features • These diodes are delivered taped. • Small Resin Package Flat lead type SRP-F is suitable for compact and high-density surface mount design.

TAPE RECORDER bias application

Abstract: op amp ua 745 H1016 pal 007B ANA 618 HD R 433 M 2199 MCU TO-92 4 bits microcontroller BPL TV tuner CMT54
Contextual Info: REJ09B0329-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2199R Group, H8S/2199R F-ZTAT

RQA0001DNS

Abstract: A0001 RQA0001DNSTR-E
Contextual Info: RQA0001DNS Silicon N-Channel MOS FET REJ03G0582-0200 Rev.2.00 Aug 03, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz • Small Outline Package (WSON0303-2: 3.0 x 3.0 × 0.8mm) Outline

Contextual Info: RKP410KS Composite Pin Diode for Antenna Switching REJ03G1544-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)

HVL147M

Abstract: PUSF0012ZA-A RKP201KN RKP409KS
Contextual Info: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)