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    F 527 H Search Results

    F 527 H Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM2907MX
    Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments
    LM2907N-8/NOPB
    Texas Instruments Frequency to Voltage Converter 8-PDIP -40 to 85 Visit Texas Instruments Buy
    LM2917MX-8/NOPB
    Texas Instruments Frequency to Voltage Converter 8-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907M
    Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments
    LM2917N/NOPB
    Texas Instruments Frequency to Voltage Converter 14-PDIP -40 to 85 Visit Texas Instruments Buy
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    Vishay Beyschlag MALIEYN07DF527H42K

    CAP ALUM 27000UF 20% 50V SNAP TH
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    Vishay Beyschlag MALIEYN07DF527H02K

    CAP ALUM 27000UF 20% 50V SNAP TH
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    Vishay Beyschlag MALIEYH07DF527H02K

    CAP ALUM 27000UF 20% 50V SNAP TH
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    Vishay Beyschlag MALIEYH07DF527H42K

    CAP ALUM 27000UF 20% 50V SNAP TH
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    Vishay Intertechnologies MALIEYN07DF527H02K

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    F 527 H Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    m24308 backshell

    Abstract: 527-019 8602A mil-c-24308 gasket mil-c-24308 SCREWLOCK f0 backshell 527-01
    Contextual Info: MIL-C-24308 D-Subminiature 527-019 EMI/RFI D-Subminiature Split Backshell for Individual and Overall Shielding with Strain Relief 527-019 M 02 03 R5 F 1 F F Basic Part No. F = Strain Relief, G = Gland Nut Cable Range Finish Symbol Page 3 0 = Without EMI Gasket


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    MIL-C-24308 m24308 backshell 527-019 8602A mil-c-24308 gasket mil-c-24308 SCREWLOCK f0 backshell 527-01 PDF

    osram topled

    Contextual Info: InGaN-High Brightness Lumineszenzdiode 527 nm, High Power InGaN High Brightness Light Emitting Diode (527 nm, High Power) F 0527B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 2.4mW @ 20 mA (im 5mm Radial Gehäuse)


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    0527B osram topled PDF

    527-019

    Abstract: m24308 backshell rear panel mount jackscrew d connector
    Contextual Info: MIL-DTL-24308 D-Subminiature 527-019 EMI/RFI D-Subminiature Split Backshell for Individual and Overall Shielding with Strain Relief 527-019 M 02 03 R5 F 1 F Basic Part No. F = Strain Relief, G = Gland Nut Finish Symbol Page 3 0 = Without EMI Gasket 1 = With EMI Gasket


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    M24308/26 GK134. MIL-DTL-24308 527-019 m24308 backshell rear panel mount jackscrew d connector PDF

    Contextual Info: InGaN-High Brightness Lumineszenzdiode 527 nm InGaN High Brightness Light Emitting Diode (527 nm) F 0287B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 1.3 mW @ 20 mA (im 5mm Radial Gehäuse) • Chipgröße 260 x 260


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    0287B 527nm PDF

    Miscellaneous Rectangular Backshells

    Abstract: 527 197 527-197
    Contextual Info: Miscellaneous Rectangular Backshells 527-197 Strain-Relief Backshell for Hughes MRS Connectors 527 197 212 08 N E Product Series E = Strain Relief Omit for Nut Basic No. Finish Symbol Table III Shell Size (Table I) Dash No. (Table II) 45° F .440 ( 11.2)


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    121ht Miscellaneous Rectangular Backshells 527 197 527-197 PDF

    Miscellaneous Rectangular Backshells

    Abstract: 527-002
    Contextual Info: Miscellaneous Rectangular Backshells 527-002 Split Backshell with Strain-Relief for MIL-DTL-83527/A Connectors 527-002 A08 C12 D12 NF Basic Part No. Entry Location A, B, C, D, E, F, G, H and Dash No. (Table I) - Note: 3 Entry Combinations Maximum Finish (Table II), Omit for Standard


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    MIL-DTL-83527/A Miscellaneous Rectangular Backshells 527-002 PDF

    Analog Voltage Comparators

    Abstract: s6527 SE/NE527
    Contextual Info: siynotics ANALOG VOLTAGE COMPARATOR 527 LINEAR INTEGRATED CIRCUITS DESCRIPTION PIN CONFIGURATION The SE/N E 527 is a high speed analog voltage com parator w h ich, fo r the fir s t tim e mates s ta te -o f-th e -a rt S c h o ttk y diode technology w ith the conventional linear process. This


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    SE527 NE527 Analog Voltage Comparators s6527 SE/NE527 PDF

    Contextual Info: [TTWVCEFiELD M A f Footprint D im e n sion s in. m m Standard P/N 517-95AB 527-45AB 527-24AB 518-95AB 528-45AB 528-24AB 2.28 2.28 2.28 2.40 2.40 2.40 (5 7.9) (5 7.9) (5 7.9) (6 1.0) (6 1.0) (6 1.0) x x x x x x 2.40 2.40 2.40 2.28 2.28 2.28 (61.0) (61.0)


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    517-95AB 527-45AB 527-24AB 518-95AB 528-45AB 528-24AB 17J29J- PDF

    Contextual Info: 6 4 5 A PPR O VED : D A T E :_ TITLE: .590 [15.00]' .467 [11.86 ]' I UUUUjUUUU | .535 [13.60] =F I "= f .527 [13.40] SPECIFICATIONS: Material: Insulator: Nylon 46, rated UL 94V—0 Insulator color: Black Contacts: Phosphor Bronze Plating:


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    MTJ-88YX1-T/R PDF

    Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 820 527 501 Datum / Date : Disk Varistor Standard WE-VD DIAM: 20 2010-07-19 ROHS Compliant mm A Elektrische Eigenschaften / Electrical Properties :


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    D-74638 PDF

    opr12

    Abstract: opr 12 Mosfet J49 9mfp 7291P TA8425H 8212F 7774P TA7363AP 24 dip "transistor array"
    Contextual Info: 1. FUNCTION INDEX General Information E quipm ent Model Package Max. rating Functions Page TC9142P DIP 16 - 8-bit D/A conversion-type F /V P/V converter incorporated, no adjustm ent required 527 TC9192P/F DIP 18 /F L P 2 0 - Double PLL controller incorporating 8-bit D/A


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    TC9142P SQP20P-300 TC9142P, TC9192P/F TC9203P/F TC5081AP TA7715P TA7712P/F TD62318AP 62803P opr12 opr 12 Mosfet J49 9mfp 7291P TA8425H 8212F 7774P TA7363AP 24 dip "transistor array" PDF

    Contextual Info: l i Ma jnm jf i.jninfii m Commerce Drive microsemi * «* Tel: 215 631-9840 Montgomeryvilie, P A 18936-1013 »"•«ÿ'WXPow ea-iijjy S U I 527-0 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS « DESIGNATED FDR HIGH POWER PULSE !FF AMD TACAN . 5.0 WATTS (min.IIF F 1030-1090MH2.


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    1030-1090MH2. SD1527-B 05S/f S45-S 132/S PDF

    280117

    Abstract: 119-RG174 Kings Electronics 110-RG302 JCA2138 JCA2139 M39012 RG302 260018 122325
    Contextual Info: OVER 3 -527 KINGS ELECTRONICS CO., INC., TUCKAHOE, NEW YORK CLAMP NUT ASSEMBLY CLAMP ASSEMBLY BRAID E A CENTER CONTACT* 1 CENTER CONDUCTOR " f OC LU LU LU cl m CL < co MILITARY PART NO. KINGS PART NO. M39012/ CABLE PART NO. M17/ A DIM ±.016 B DIM ±.016


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    M39012/ 111-RG303 110-RG302 113-RG316 119-RG174 RG316/RG174 JCA2139 280117 119-RG174 Kings Electronics 110-RG302 JCA2138 M39012 RG302 260018 122325 PDF

    D010

    Contextual Info: V I File No. SHEET 527 1/1 J Shell size A±0.13 B±0.10 C±0.13 D±0.10 AUK A M EM B ER O F A U K GRO UP AUK CONTRACTORS CO. LTD. CATEGORY Centronio Right PART No. CRZXXP DRAWING No. CRZXXP SCALE NONE APPROVED BY MEI CHECKED BY LHC DRAWING BY HZF REV. UNLESS OTHERWISE


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    PDF

    UL92V-0

    Abstract: 501527-3A39
    Contextual Info: 10 ].5 A ) 1.7 5 ) CL f t ì f ìtft J tL U W IT H O U T M E T A L C O M V E R (R E F E R E N C E ) 3 .3 4 M ETAL f it t in g C 0V ER x ' n a il SEC TION I' u - I' v - f TRADE 19.32 22.1 17.6 21.1 501527-093D 5 01 527-0939 90 17.32 20.1 15.6 19.1 5 0 1 5 2 7 - 0 8 3U


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    SD-501527-001 2005/K SD-501527-002 EN-02JAI021) UL92V-0 501527-3A39 PDF

    marconi electronic devices ltd

    Abstract: dtmf REPERTORY DIALLER telephone keypad interface circuit with dtmf LS356 LS656 MA5271 MA5272 MA5273 MA5274 marconi circuit ct
    Contextual Info: Marconi Electronic Devices SIN G LE C H IP P R O G R A M M A B LE LOOP D IS C O N N E C T /D T M F REPERTORY DIALLER M A 527 FA M ILY LD O N L Y F E A TU R E S * ♦ * * * * * * * * User s ele cta ble 'LO O P D IS C O N N E C T ' or 'D T M F ' dialler m odes.


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    MA527 300ms 400ms 800ms. LS356 LS656 MA527 LS656 marconi electronic devices ltd dtmf REPERTORY DIALLER telephone keypad interface circuit with dtmf MA5271 MA5272 MA5273 MA5274 marconi circuit ct PDF

    8-527

    Abstract: helicopter construction ELDEC Proximity Switch 8-527 MS21340 ms21340-05 ELDEC eldec Crane MS25081 "boeing 767" BOEING
    Contextual Info: ELDEC CORPORATION MODEL 8-527 HERMETICALLY SEALED PROXIMITY SWITCH All-Metal Sensing, Sinking Output NU T MS2 13 40 -0 5 WAS HER MS2 508 1 -0 5 .62 5 -2 4 UNE F -2 A SENSING FACE MIL-C -3 89 9 9 SER IES III CO NN ECTO R .75 19.1 .72 (18.3) 3 x ø .0 4 7 ( 1. 19 )


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    DO-160 8-527 helicopter construction ELDEC Proximity Switch 8-527 MS21340 ms21340-05 ELDEC eldec Crane MS25081 "boeing 767" BOEING PDF

    Contextual Info: MITSUBISHI LSIs M 5 M 5 2 7 9 P , J - 1 5 , - 2 0 , - 2 5 , - 3 5 294912-BIT 32768-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5 M 527 9 is a fam ily o f 32768-w ord by 9-bit static RAMs, fabricated w ith the high-performance CMOS silicon-


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    294912-BIT 32768-WORD 32768-w 5279P M5M5279P PDF

    M74ALS174P

    Abstract: dd15m 2113M
    Contextual Info: MITSU B IS HI íDGTL LOGIC} TI » F l ^5^527 DD15M3t. t I m m iiiauB i a u B IISH S I I ALSTTLs M74ALS174P 6 2 49 82 7 MITSUBISHI DGTL LOGIC ' 91D 12436 D HEX D-TYPE FLIP FLOP W ITH RESET DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M74ALS174P is a sem iconductor integrated circuit


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    DD15M3t. M74ALS174P M74ALS174P 16P2P 16-PIN 150mil T-90-20 20P2V 20-PIN 300mil dd15m 2113M PDF

    Contextual Info: OPERATING CHARACTERISTICS AT 25° C AMBIENT LED CHARACTER 1S 1T 1CS LUMINOUS I NT E N S I T Y PEAK WAVELENGTH DOMINANT WAVELENGTH VI EWING ANGLE 2 0 1 / 2 FORWARD VOLTAGE REV MIN TYP MAX UNITS TEST CONDITION 2500 4200 7200 mcd I f = 20 mA nm 518 nm 520 527 535


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    85TOLERANCES: PDF

    haier

    Abstract: 010AB
    Contextual Info: . 542 522 389 369 D • q D 517 507 □ . 220 . 210 . . 527 507 107 097 VIEW E - E VIEW D - D F R E E S C A L E SEMICONDUCTOR, A L L R IG H TS RESERVED. INC. T IT L E : HAIER 4 LEAD SENSOR MECHANICAL OUTLINE P R IN T VERSION NOT TO SCALE DOCUMENT NO: 98ASA10581D


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    98ASA10581D 5M-1994. haier 010AB PDF

    Contextual Info: P4 LEDs F e at u r e s a p p l i c at i o n s  Size mm :  Amusement  7.6 x 7.6  Color and Typical Dominant Wavelength (nm):       Red: Green: Blue: Bluish Green: Amber: White (624 and 628) (527) (470) (505) (591)   


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    LP377 LP476 LP377EWH1-60G LP377PWN1-60G LP377EWH1-90G LP377PWN1-90G LP476 LP476THR1-90G-01 PDF

    2SB528

    Abstract: 2SB527 2sb526 2SD358 2SD357 2SD356 2S0358
    Contextual Info: -> | J n > N P N 2SD356, 2SD357, 2S0358 + v t J l- f j^ 4 0 ~ 7 0 W ffl* i mm il- ffi 0 8.2 MAX. •¡ » E V ceo = 8 0V , 100V , 1 2 0 V o • h FEO I l | g t i ^ S ^ ' o • 2SB 526, 2 S B 5 2 8 £ a y / y /. v 9 y 2SB 527, i-c-t-o ! 25°C ) u 9 f i • ^ —.* PbJIEE


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    2SD356, 2SD357, 2S0358 70Wffl^ 2SB526, 2SB527, 2SB528Â 2SD356 2SD357 2SD358 2SB528 2SB527 2sb526 2SD358 2S0358 PDF

    BUW40

    Abstract: BUW40A BUW40B 27e- transistor 33SSS
    Contextual Info: Power Transistors F ile N u m b e r 1308 BUW40, BUW40A, BUW40B HARRIS SEMICOND SECTOR E7E D 43G 527 1 QD202GS 5 B H A S - r a - 3 - i 1 - A S ä m tg M J ä a if V E R S A W A T T T r a n s is t o r s High-Voltage N-P-N Types for O ff-Line Power Supplies and Other


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    BUW40, BUW40A, BUW40B 43G2271 QD202GS O-220AB RCA-BUW40. together15 BUW40 BUW40A 27e- transistor 33SSS PDF