F 527 H Search Results

osram topled

Contextual Info: InGaN-High Brightness Lumineszenzdiode 527 nm, High Power InGaN High Brightness Light Emitting Diode (527 nm, High Power) F 0527B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 2.4mW @ 20 mA (im 5mm Radial Gehäuse)

527-019

Abstract: m24308 backshell rear panel mount jackscrew d connector
Contextual Info: MIL-DTL-24308 D-Subminiature 527-019 EMI/RFI D-Subminiature Split Backshell for Individual and Overall Shielding with Strain Relief 527-019 M 02 03 R5 F 1 F Basic Part No. F = Strain Relief, G = Gland Nut Finish Symbol Page 3 0 = Without EMI Gasket 1 = With EMI Gasket

Contextual Info: InGaN-High Brightness Lumineszenzdiode 527 nm InGaN High Brightness Light Emitting Diode (527 nm) F 0287B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 1.3 mW @ 20 mA (im 5mm Radial Gehäuse) • Chipgröße 260 x 260

Miscellaneous Rectangular Backshells

Abstract: 527 197 527-197
Contextual Info: Miscellaneous Rectangular Backshells 527-197 Strain-Relief Backshell for Hughes MRS Connectors 527 197 212 08 N E Product Series E = Strain Relief Omit for Nut Basic No. Finish Symbol Table III Shell Size (Table I) Dash No. (Table II) 45° F .440 ( 11.2)

Miscellaneous Rectangular Backshells

Abstract: 527-002
Contextual Info: Miscellaneous Rectangular Backshells 527-002 Split Backshell with Strain-Relief for MIL-DTL-83527/A Connectors 527-002 A08 C12 D12 NF Basic Part No. Entry Location A, B, C, D, E, F, G, H and Dash No. (Table I) - Note: 3 Entry Combinations Maximum Finish (Table II), Omit for Standard

Analog Voltage Comparators

Abstract: s6527 SE/NE527
Contextual Info: siynotics ANALOG VOLTAGE COMPARATOR 527 LINEAR INTEGRATED CIRCUITS DESCRIPTION PIN CONFIGURATION The SE/N E 527 is a high speed analog voltage com parator w h ich, fo r the fir s t tim e mates s ta te -o f-th e -a rt S c h o ttk y diode technology w ith the conventional linear process. This

Contextual Info: 6 4 5 A PPR O VED : D A T E :_ TITLE: .590 [15.00]' .467 [11.86 ]' I UUUUjUUUU | .535 [13.60] =F I "= f .527 [13.40] SPECIFICATIONS: Material: Insulator: Nylon 46, rated UL 94V—0 Insulator color: Black Contacts: Phosphor Bronze Plating:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 820 527 501 Datum / Date : Disk Varistor Standard WE-VD DIAM: 20 2010-07-19 ROHS Compliant mm A Elektrische Eigenschaften / Electrical Properties :

opr12

Abstract: opr 12 Mosfet J49 9mfp 7291P TA8425H 8212F 7774P TA7363AP 24 dip "transistor array"
Contextual Info: 1. FUNCTION INDEX General Information E quipm ent Model Package Max. rating Functions Page TC9142P DIP 16 - 8-bit D/A conversion-type F /V P/V converter incorporated, no adjustm ent required 527 TC9192P/F DIP 18 /F L P 2 0 - Double PLL controller incorporating 8-bit D/A

marconi electronic devices ltd

Abstract: dtmf REPERTORY DIALLER telephone keypad interface circuit with dtmf LS356 LS656 MA5271 MA5272 MA5273 MA5274 marconi circuit ct
Contextual Info: Marconi Electronic Devices SIN G LE C H IP P R O G R A M M A B LE LOOP D IS C O N N E C T /D T M F REPERTORY DIALLER M A 527 FA M ILY LD O N L Y F E A TU R E S * ♦ * * * * * * * * User s ele cta ble 'LO O P D IS C O N N E C T ' or 'D T M F ' dialler m odes.

8-527

Abstract: helicopter construction ELDEC Proximity Switch 8-527 MS21340 ms21340-05 ELDEC eldec Crane MS25081 "boeing 767" BOEING
Contextual Info: ELDEC CORPORATION MODEL 8-527 HERMETICALLY SEALED PROXIMITY SWITCH All-Metal Sensing, Sinking Output NU T MS2 13 40 -0 5 WAS HER MS2 508 1 -0 5 .62 5 -2 4 UNE F -2 A SENSING FACE MIL-C -3 89 9 9 SER IES III CO NN ECTO R .75 19.1 .72 (18.3) 3 x ø .0 4 7 ( 1. 19 )

Contextual Info: MITSUBISHI LSIs M 5 M 5 2 7 9 P , J - 1 5 , - 2 0 , - 2 5 , - 3 5 294912-BIT 32768-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5 M 527 9 is a fam ily o f 32768-w ord by 9-bit static RAMs, fabricated w ith the high-performance CMOS silicon-

Contextual Info: OPERATING CHARACTERISTICS AT 25° C AMBIENT LED CHARACTER 1S 1T 1CS LUMINOUS I NT E N S I T Y PEAK WAVELENGTH DOMINANT WAVELENGTH VI EWING ANGLE 2 0 1 / 2 FORWARD VOLTAGE REV MIN TYP MAX UNITS TEST CONDITION 2500 4200 7200 mcd I f = 20 mA nm 518 nm 520 527 535

2SB528

Abstract: 2SB527 2sb526 2SD358 2SD357 2SD356 2S0358
Contextual Info: -> | J n > N P N 2SD356, 2SD357, 2S0358 + v t J l- f j^ 4 0 ~ 7 0 W ffl* i mm il- ffi 0 8.2 MAX. •¡ » E V ceo = 8 0V , 100V , 1 2 0 V o • h FEO I l | g t i ^ S ^ ' o • 2SB 526, 2 S B 5 2 8 £ a y / y /. v 9 y 2SB 527, i-c-t-o ! 25°C ) u 9 f i • ^ —.* PbJIEE

0.01 K100

Abstract: aeg rectifier AEG d 60 n 800 BY527 AEG T 25 N 1000
Contextual Info: A E G C ORP 17E O O B ci 4 H b D O D Q ‘1775 T BY 527 TTilLllPlOGOTilM e le ctron ic Creative Technologies o i- ir Silicon Mesa Diodes Applications: Power rectifier Features: • Controlled avalanche characteristics • Low reverse current • Glass passivated junction

ADSP-BF527BBCZ-5AX

Abstract: ABE 802 ADSP filter algorithm implementation bf526 ADSP-BF52x
Contextual Info: Blackfin Embedded Processor ADSP-BF522/523/524/525/526/527 Preliminary Technical Data FEATURES PERIPHERALS Up to 600 MHz high-performance Blackfin processor Two 16-bit MACs, two 40-bit ALUs, four 8-bit video ALUs, 40-bit shifter RISC-like register and instruction model for ease of

Contextual Info: ♦.,V oo T Cathode (2) Dummy t oo m o o O rn < N r n Polarity reference for (J), (3 ) (A ; V F(V) Emission Color LED Material Ip(mA) Typ- Max. 100 2.20 2.79 AlInGaP Red HT-P168USDJ 100 2.20 2.79 Amber AlInGaP HT-P168UYJ 150 3.40 3.99 InGaN Green HT-P168NGH

Contextual Info: oroi 1 Cathode (2 ) Dummy T oo CO o o o O CO C4 CO Polarity reference for , @ k(V) Part Number HT-P166USDJ HT-P166UYJ HT-P166NGH HT-P166NBH HT-P166USDT HT-P166UYT HT-P166NGU HT-P166NBU HT-P266USDS HT-P266UYS HT-P266NGV HT-P266NBV HT-P366USDY HT-P366UYY

led 5mm 20ma

Abstract: LED 5mm green 40 mcd LC503TPG1-15G-A LC503TPG1-15H-A LC503TPG1-30G-A LC503TPG1-30H-A LO566TPG4-60G-A silicon carbide LED
Contextual Info: TPG Green LEDs ULTRABRIGHT LEDs LED The Cotco TPG Green Series LEDs utilize the most recent advances in InGaN/SiC technology. The die process combines highly efficient InGaN materials with a Silicon Carbide SiC substrate in a geometrically enhanced Epidown chip design to maximize light extraction efficiency.

937 ke

Abstract: KT 816 937 ke equivalent components K1255 kd 637
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 K Series Revised 1-04 Knobs, Machined Aluminum K SERIES Model K700B1/4 F NO. 6-32 SET SCREW 2 PLACES .281 7.14 .157 (3.99) .500 (12.70) 120° CD B F

Contextual Info: Part Num ber Em ission C olor LED M aterial l F m A F lu x (Im ) T yp. A (n m ) AP AA M in. 625 636 30 2 .9 5 v F<V ) T yp. M ax. Ad H T -P 1 7 8 U S D J Red A lIn G a P 100 2 .2 0 2 .7 9 H T -P 1 7 8 U Y J Am ber A lIn G a P 100 2 .2 0 2 .7 9 595 600 30

Contextual Info: / / Part N um ber Em ission C olor V F V LED M aterial l F(m A ) T yp. M a x. Ad F lu x (Im ) T yp. A (n m ) AP AA M in. R ed A lIn G a P 100 2 .2 0 2 .7 9 625 636 30 2 .9 5 H T -P 1 7 6 U Y J Am ber A lIn G a P 100 2 .2 0 2 .7 9 595 600 30 2 .9 5 H T -P 1 7 6 N G H

Contextual Info: U n it: mm i i C_ 5.25 Polarity reference for Part Num ber Em ission C olor LED M aterial . O' Cathode — ‘ ^ Anode @ Cathode © , © , © M ax. Ad A nm) AP F lu x (Im ) AA M in. T yp. Red A lIn G a P 100 2 .2 0 2 .7 9 625 636 30 2 .9 5 H T -P 1 7 8 U Y J

Contextual Info: Part N um ber Em ission C olor V F V LED M aterial l F(m A ) T yp. M a x. Ad F lu x (Im ) T yp. A (n m ) AP AA M in. R ed A lIn G a P 100 2 .2 0 2 .7 9 625 636 30 2 .9 5 H T -P 1 7 6 U Y J Am ber A lIn G a P 100 2 .2 0 2 .7 9 595 600 30 2 .9 5 H T -P 1 7 6 N G H