F 43 E Search Results

Contextual Info: TYPE 43 Series 75 ohm SMB Printed Circuit Board P lu gs Fig u re 1 (11.4) r— I 20 -1 (5.08) ^ •.04 DIA (0.9) .24 DIA (6 .2 ) . .31 (8.0) SQ UARE RECOM M ENDED MOUNTING HOLE F ig u re 2 Fig u re B T R e fe re n c e 1 Plug 43/1 D B67 N08 T999 XTY 2 Plug 43/1E

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL43B474KBFNNNF  Description : CAP, 470㎋, 50V, ±10%, X7R, 1812  Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series CL 43 B 474 K B F N N N F ① ② ③

EM488M1644VBA

Contextual Info: 128Mb Mobile SDRAM Ordering Information EM 48 8M 16 4 4 V B A – 75 F EOREX Logo EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : Power Blank : Standard I : Industrial 40 41 42 43 46 48 F: PB free package Density 16M : 16 Mega Bits 8M : 8 Mega Bits

SPS-43-GB-P2-CDFC

Abstract: SPS-4 SPS-43-GB
Contextual Info: SPS-4 43-GB-P2-CD DFC F Features z Support IEEE 8 802.3ah -20 004 1000BASE-PX20 a GEPON OLT side application z Single fiber f bi-directional data a links with h symmetricc 1.25Gbp ps upstream and downstrream z Integrate ed with m micro-optics WDM filter

semikron IGBT skiip

Abstract: SKIIP 25AC12T4V1 miniskiip 2 25AC12T4v semikron skiip 33 miniskiip2 semikron skiip IGBT
Contextual Info: SKiiP 25AC12T4V1  * +,    "  Absolute Maximum Ratings Symbol Conditions IGBT -%. / * )( +  / * 24( + 6 2)33 - 4'   * 43 + (5  2(3  8)3 - / * 2(3 + 23 <  * )( + (&   * 43 + (  2(3  )&(  233  A 3$$$B24(

Contextual Info: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Unit : mm Package : 2F D4F60 + 600V 4A Ü 43 f i 2.5 PyHa-t W • B s t t ic f f ln s f lis t t 6.1 Date code Standard soldering pad O iS I fsm C0.8 («fiLtCDSnîEOLYCB:, }£EP tt«£C !B 18<

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL43B226KPJNNNF  Product : Multi-layer Ceramic Capacitor  Description : CAP, 22㎌, 10V, ±10%, X7R, 1812 A. Samsung Part Number ① Series CL 43 B 226 K P J N N N F ① ② ③

0816-1X4T-43-F

Contextual Info: INTEGRATED CONNECTOR MODULES 0816-1X4T-43-F Gigabit Ethernet MagJack 1 x 4 2006 Bel Fuse Inc. Bel Fuse Inc. 206 Van Vorst Street, Jersey City, NJ 07302 • Tel 201-432-0463 • Fax 201-432-9542 • www.belfuse.com Specifications subject to change without notice. 03.06

2042A

Abstract: 2039 transistor SC-46 220kf 2049B
Contextual Info: TRANSISTOR CASE OUTLINES Case Outline 2003A unit: mm Case Outline 2042A T0126M L Case Outline 2039 Case Outline 2049B (unit: mm) T0220M F Case Outline 2048A {unit: mm) 0,44 2.0 0.» ob \ -»C *4.0— B: Base Cr Collector E: Emitter JEDEC : TO-92 EIAJ : SC-43

lm 458 ic

Contextual Info: SIEMENS HFG :C Fab.-Gr.: 545 Date: 17.03.97 Datasheet Preliminary Department: HL OCD VIS AT Name: F. Schellhorn GF: 43 Edition: 1 2 3 4 5 6 X BLUE LINE Hyper 3mm Typ: Unicolored X SMT LB 3336 Die-Technology: MultiLED □ Radial X m in ( If = 10 mA)

37AC12T4V1

Abstract: semikron skiip 3 SKIIP semikron skiip 33
Contextual Info: SKiiP 37AC12T4V1  * +,    "  Absolute Maximum Ratings Symbol Conditions IGBT -%. / * )( +  / * 24( + 7 2)33 - 5&   * 43 + 46  )(  9)3 - 23 = 7 * '8 1 3-phase bridge inverter SKiiP 37AC12T4V1 " - * &33 -: - % ; )3 -:

semikron skiip 33

Contextual Info: SKiiP 11AC12T4V1  * +,    "  Absolute Maximum Ratings Symbol Conditions IGBT -%. / * )( +  / * 24( + 6 2)33 - 25   * 43 + 2&  )  8)3 - 6 * '7 1 MiniSKiiP 1 3-phase bridge inverter " - * &33 -9 - % : )3 -9

Contextual Info: Rev DATF: Description AW 0# • APPROVFD: A T IT I F : Date 10/4/04 5/28/10 RELEASED CHANGED DESIGN Appr .638 [ 16 .20 ]' .469 [ 11 .90 ] ^ X— -650 [ 16.50 ] ^ X— .450 [ 11 .43 ] .630 [ 16 .00 ] SPECIFICATIONS: Material: Insulator: Insulator Contacts:

Contextual Info: MIC631/32/33 and MIC641/42/43 S rn r _ 'l—- l GlÉjM •-j Ü K G J lP L JM jjw j |l^ KÜi f P j| ^ f ijB n J Step-Up Switching Regulators g g |j|ghg j|i|fl| General Description The MIC631/641, MIC632/642, and MIC633/643 are fixed frequency, hysteretic-mode, step-up boost regulators.

Contextual Info: TAIWAN LITON ELECTRONIC L I T E M mie t> m 'T 'L\\'V ? Î I FEATURES • .43 INCH 11.0m m D IG IT HEIG HT. • CO NTINUO US U N IFO R M SEGMENTS. • CHOICE OF F IV E BRIG HT CO LO RS-RED/BRIG HT R E D /G R E E N /Y E LLO W /O R A N G E . • LOW POWER R EQ U IR E M E N T.

Contextual Info: 7 TH 5 DRAWING CO PY R IG H T IS 19 U N P U B L IS H E D . RELEASED BY AMP IN CO RP O RA TE D. ALL FOR PUBLICATION R IG H T S 6 5 ,19 R ES ER V ED . 11.68- Q •SEE DETAIL A D ■27 . 43±0 . 3 8 C B A , 11 - F E B 3-D I MENS I O N A L NTS AMP 97 4805 REV

D-Sub 9 pol

Abstract: d-sub-37 D-Sub 9 pol 90 25-pol D-Sub 9 pol Datasheet 6755L mo331 sub 135 5525L 15-POL
Contextual Info: A Contents of bracket range 9 9 9 9 9 9 9 9 9 9 9 15 15 15 15 15 C 9 page PCI 7 KHPC 27-29 8 9 30-33 34-36 37-39 40 B 15 25 15 9 25 15 10 11 12 41 42 43-44 13 45 46 14 47-49 50-51 52 D 15 25 25 37 37 E 50 50 25 F page PCI KHPC 53 15 16 17 54-56 57-58 59-61

lm 4011

Abstract: lambda lm series Lambda lm regulated power supply 16X4 LCD LM-E-48 Lambda LM LM228 LME24 LM-229 Lambda LCS
Contextual Info: 5 YEAR GUARANTEED UNEAR Lambda LM series Features—LM series 7 package sizes Rugged convection-cooied chassis 5-year guaranteed MIL-R-26 type wire wound resistors Lambda M1L-T-27C grade 6 magnetics layer wound with electrostatic shield MIL-W-16878 Wire UL approved

Silicon Photocells

Abstract: S1010 photocell encoder silicon photocell Silicon Sensors, Inc s05025 s1020 S0520
Contextual Info: Silicon Photocell Sensors Texas Optoelectronics, Inc. SILICON PHOTOCELL SENSORS TOI silicon photocells are employed in photometer, switching, position detection, tape and disc EOTBOT sensing, solar energy conversion, and other numerous applications. Silicon photosensors with

Contextual Info: Thal H e w lett WilEM P A C K A R D - Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 F eatures • Low N oise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz

zkb 470

Abstract: zkb 480
Contextual Info: M A G N ETSCH U LTZ S O L E N O ID S A N D S O L U T IO N S QUALITY SINCE 1912 D.C. High Duty Solenoids 1 Built-in rectifier for A.C. supply Range up to 30 mm and 1296 Ncm Product group Type GTC A • According to VDE 0580 and ISO 9001 conform with article 10 of direction 73/23/EEC according to CENELEC memorandum no. 3 of March 1987 .

Contextual Info: SHF-0500 DC- 8 GHz, 2 Watt AIGaAs/GaAs HFET Preliminary Data Features - AIGaAs/GaAs Heterostructure FET Technology - +33dBm Output Power at 1dB Compression - High Power Added Efficiency: Up to 40% - +43dBm Output 3rd Order Intercept Point - Low Cost Copper Tungsten Package

2016D

Contextual Info: RSHN SERIES High-Attenuation Type Single-Phase Filter with Various Variations and Functions • FEATURES ● Self-tightening screws and an open/close type cover make wiring work easier. ● 3 to 300A wide range lineup. ● Optional low-leakage current characteristic type and DIN rail installation compatible type are also available.

POE-15

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Contextual Info: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP