F 2601 Search Results

Contextual Info: 2101-F • 2101-1-F • 2101-2-F • 2601-F DESCRIPTION PIN CONFIGURATION The 2101 series and the 2601 are 1024-bit high performance, low power static read/write RAMs organized as 256 words by 4 bits. F PACKAGE F The 2101 series and the 2601 are fu lly static and no refresh operations, sense amplifiers, or

k612

Abstract: 2601M
Contextual Info: Han-Modular Number of contacts 2 Han® Axial screw module Part No. Identification Male insert M Female insert (F) Drawing Dimensions in mm Axial screw terminal M 09 14 002 2601 Han Modular F 09 14 002 2701 M F Contact arrangement View from termination side

k612

Contextual Info: Han-Modular 1000 V 40 A Number of contacts 2 Han® Axial screw module 40 Part No. Identification Male insert M Female insert (F) Drawing Dimensions in mm Axial screw terminal M 09 14 002 2601 Han Modular F 09 14 002 2701 M F Contact arrangement View from termination side

Contextual Info: TC58F10OOP/F/J-15 TC58F1000P/F/J-20 T C 5 8 F 1 0 0 0 P /F /J 131,072W ORD X 8BIT C M O S FLASH E2 P R O M D ESC RIP TIO N The TC58F1000P / F / J is a 1,048,576 bits, Flash Electrically Erasable and Programmable Read Only Memory FE2PROM organized as 131,072 words by 8 bits. The TC58F1000P / F / J is fabricated

TC58F1001P

Contextual Info: $*,Í\R i 0 TOSHIBA MOS INTEGRATED CIRCUIT INTEGRATED CIRCUIT T C 5 8 F 1 0 0 1 P /F - 1 5 , T C 5 8 F 1 0 0 1 P /F -2 0 TO SHIBA TECHN1CAL DATA SILICON STACKED GATE MOS TENTATIVE DATA TC 58F1001P /F 131.072W O RD x 8BIT CMOS FLASH E2 PROM DESCRIPTION

F16 - 100 HIP

Abstract: 58F1001
Contextual Info: TENTATIVE DATA TC58F1001P/F 131,072WORD x 8BIT CMOS FLASH E2 PROM DESCRIPTION T he T C 5 8 F 1 0 0 1 P /F is a 1,048,576 bits, F la sh E lectrically E ra sa b le a n d P ro g ram m ab le R ead O nly M em ory FE 2PROM organized as 131,072 w ords by 8 bits. T he T C 5 8 F 1 0 0 1 P /F is fab ricated by

401C

Abstract: D150 VIA141
Contextual Info: YFLEX YFLEX IB llig W IC L C P 0 M 7K U V - ^ f f l U ^ 7 U + Í/^ b ^ 'J V h ÍE íB M I < Y F L E X > c m w k b * -r v tf-^ v x M ê is i+ ô ^ ^ o G b p s b ^ U O s S IË ^ R lig i£ iiS ) S tt- ü ^ S Æ tÊ ic ffin r u ^ fc * f c ^ f f l A ° ^ - >

Contextual Info: 2601 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300p C1/C2 Min. Capacitance Ratio6.5 V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.40 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-14

FX507

Abstract: FX407A DHKG FX407S FX507A FX507S FX607N 047mfd CML FX407A FX105
Contextual Info: CONSUMER MICROCIRCUITS LTD P R O D U C T IN F O R M A T IO N F X 4 0 7 A - F X 407S - F X 5 0 7 A - F X 507S - F X 607N 5 -T o n e S e q u e n tia l C o d e T ra n s c e iv e rs fo r S e le c tiv e C all S y ste m s Obsolete Product - For Information Only -

Contextual Info: Ille Rechte Vorbehalten/ -L _ HU rights risani 5 f ü r L i t z e 2 , 5 . . . 10mm2 f e i n d r ä h t ig f e i n s t d r ä h t ig 2 , 5 . . . 6mm2 f o r standed wire 2 , 5 . . . 10mm2 f i n e wire ( s u perfin e wire 2 , 5 . . . 6rm2 ) All Diiensions in •

Contextual Info: 2601A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300p C1/C2 Min. Capacitance Ratio6.5 V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.40 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-14

diode avalanche DSA 42-16

Contextual Info: JD A S E A B R O ùJN/ABB S E H I C O N Netzdioden 42-04 A 42-08 A 42-12 A 42-14 A 42-16 A DS I DS(I) DSQ) DSfl) V r r m If r m s ' f a v i If a v m (To) T c - J Tk 10CPC 8,3 ms V 80-04 F 80-08 F 80-12 F 80-14 F 80-16 F DSO) DSO) DSO) DSO) DSfl) 110-04 110-08

TC58257A

Abstract: TC58F1001P 0A000-0AFFF 18XXX EPROM sop 40
Contextual Info: TOSHIBA MOS INTEGRATED CIRCUIT IN T E G R A T E D C IR C U IT T O S H IB A TC 58F1001P/F- 15 , T C 58F 1001P /F -20 T E C H N |CAL D A T A SILICON STACKED GATE MOS TENTATIVE DATA TC58F1001P/F 131.072W ORD x 8BIT CMOS FLASH E2 PROM DESCRIPTION T he TC 58F1001P / F is a 1,048,576 bits, F lash E lectrically Erasable and Programmable Read

Contextual Info: $*,Í\R i 0 TOSHIBA MOS INTEGRATED CIRCUIT TC 58F1001P/F- 1 5 , T C 58F1001P/F-20 SILICON STACKED GATE MOS INTEGRATED CIRCUIT T O S H IB A TECHN1CAL D A TA TENTATIVE DATA TC58F1001P/F 131.072W ORD x 8BIT CMOS FLASH E2 PROM DESCRIPTION The TC58F1001P / F is a 1,048,576 bits, Flash Electrically Erasable and Programmable Read

Contextual Info: 1 2 Alle Hechte Vorbehalten/ Ml rights resem i 3 I 5 4 U ,6 41,8 A m Harf Axial screw mo du 1e / 09 U 002 2601 3 ,iO A 1000V 8kV 3 c^ üs 600V c ^ S HARTING • ■ «I xxxxxxxxx JA für L it z e 2,5-8mm2 , AWGU-8, f e i n d r ä h t i g f o r s t r a n d e d w i r e 2 , 5 - 8 m m 2, AWG16-8,

SC1741

Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL
Contextual Info: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ | lr o c r ^ ig Î5 f e l U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2

TANTALUM capacitor 685 35K

Abstract: 335 35K 685k 100v capacitor a564 transistor capacitor 336 35K 102 capacitor 226 35K 022 electrolytic cat 7199 ca K277 capacitor 685 35K 106 16k
Contextual Info: F-3100C 5/99 KEMET CAPACITORS Parts shown are actual size KEMET also manufactures Ceramic Leaded, and Surface Mount Capacitors — Tantalum and Ceramic. Refer to Catalog F-3101 — Ceramic Leaded, and F-3102 — Surface Mount Capacitors for detailed information on these products. GR500

j001 1003

Abstract: 74LS00 TTL Signetics 2650 VCU 2136 j001 1003 ic signetics hand book signetics 2650 8k ram ic j001 1003 strz 2026 pss 3056
Contextual Info: > l b l IC I I V » 2650 flllCROPROCEftOR CONTENTS I IN T R O D U C T IO N IN T R O D U C IN G T H E 26 50 F A M I L Y . 3 F E A T U R E S OF T H E 26 50 F A M IL Y 4 4 Microprocessor F e a tu re s .

tfk d3 43

Abstract: 18XXX
Contextual Info: TC58F1 OOOP / F / J 131,072WORD x 8B!T CMOS FL ASH t" FROM D ESCR IPTIO N The TC58F1000P / F / J is a 1,048,576 bits, Flash Electrically Erasable and Programmable Read Only Memory FE^PROM organized as 131,072 words by 8 bits. 'The TC58F1000P / F / J is fabricated

Contextual Info: TC54H1024P/F-85 TC54H1024P/F-10 1 M EGA BIT 65,536 W O RD X 16 BIT CMOS ONE TIME PROGRAM M ABLE READ ONLY M EM O RY PRELIMINARY DESCRIPTION The TC54H1024P/F is a 65,586 word X 16 bit one time programmable read only memory, and molded in a 40 pin plastic package.

TC58257A

Abstract: 13000-13FFF 1A13 D-19 D-20 TC58F1001P TC58257
Contextual Info: K 1 8 !» U i TENTATIVE DATA TC58F1001P/F 131,072WORD x 8BIT C M O S FLASH E2 PROM DESCRIPTION The TC58F1001P / F is a 1,048,576 bits, Flash Electrically E rasable and Program m able Read Only Memory FE2PROM organized as 131,072 words by 8 bits. The T C 58F1001P/F is fabricated by

Motoren und Antriebssysteme

Abstract: motors M3G084
Contextual Info: Antriebstechnik_2011_01_18_Finale_DE_:Vorlage 18.01.2011 16:42 Seite 1 Antriebstechnik für Gleich- und Wechselspannung Die Wahl der Ingenieure Ausgabe 2011 Antriebstechnik_2011_01_18_Finale_DE_:Vorlage 18.01.2011 16:42 Seite 2 Innovationen für die Zukunft

BTA204 smd

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guaranteed commutation Product specification December 1998 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation

BT136 motor

Abstract: BTA204 Series D 500D 500E 600D 600E 800E BTA204M BTA204S
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guaranteed commutation Product specification December 1998 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation