F 115 025 Search Results

Contextual Info: F -198-1 mtec TFM-115-31-S-D T F M -1 20-01-S -D TFM-115-31-S-D mi M a te s v .n it. SFM ,^PM C Materials: *jk% Insulator Material: * Black Liquid Crystal Polyme' Terminal Material: Phosphor Bronze Current Rating: 2A @ 8 0 'C ambient Operating Temp Range:

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 2754 INITIAL RELEASE 3/8/13 TT .610±.015 15.49±0.38 .420 10.67 F F .190 4.83 .330 8.38 E E .115 2.92 A .345 8.76 INSERTION DEPTH D .431 10.95 D .420 10.67 .115 2.92 .200±.025 5.08±0.64 .028 0.71

M7216

Abstract: M8175 m7232 M6211 M6810 M7218 M7233 m8102 M8602 CM8102
Contextual Info: .125 MAX . .250 MAX . 1.00 MIN. P art Number Des ign V oltage A mps MS C P L ife Hours F ilament T ype C M6151 C M6211 5.0 5.0 .060 .080 .150 .150 5,000 15,000 C -2R C -2R C M7214 C M7215 C M7216 C M8175 5.0 5.0 5.0 5.0 .115 .115 .125 .125 .220 .190 .250 .250

M7216

Abstract: M8729 M8111 M6810 M6211 M7219 M8602 M7249 M8179 m7220
Contextual Info: .125 MAX . .250 MAX . 1.00 MIN. P art Number Des ign V oltage A mps MS C P L ife Hours F ilament T ype C M6151 C M6211 5.0 5.0 .060 .080 .150 .150 5,000 15,000 C -2R C -2R C M7214 C M7215 C M7216 C M8175 5.0 5.0 5.0 5.0 .115 .115 .125 .125 .220 .190 .250 .250

W-30

Abstract: EE-70
Contextual Info: Silicon Controlled Rectifier/Inverter Series 035 Dim. In c h e s Minimum A B C D E F G H J K M N P R S Note 1: 1 / 4 -2 8 U N F-3A Note 2: Full thread within 2 1/2 threads 03508G 2 F 03510G(2)F 03512G(2)F - 1.200 .427 .115 - .200 .120 - .065 .145

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 2060 RELEASE 10/14/2009 TT .430 10.92 F F .100 2.54 .100 2.54 .115 2.92 .370 9.40 E E .050 1.27 TYP .788±.015 20.02±0.38 A .025 0.63 D .690 17.53 .190±.025 4.83±0.64 .045 1.14 C D .515 13.08

hu 0950

Contextual Info: 1. D im e n s i o n s : 3. E l e c t r i c a l A Iso la tio n ; ,115 Maxs * U cN ^ 0.004 Min 0 . 025 M a x - a - H I — 0 -0 3 0 Y Y W W ^l □ if] d o m ^l^ ^ XF0013Q4C F im H H I F F F W F F W r 0 . 0 1 8 —4 — ± 0.002 0.050 ± 0.006 - ° I o 00 CD

Contextual Info: RoHS PCIT40 Power Chip Shielded Inductors Dimensions In. A F A B C D E F G H I C 1st E 2nd B 3rd D I G Features H PCIT40 .510 Max. .370 Max. .200 Max. .100 .100 .300 .290 .115 .110 SRF Inductance* Rated Max. Energy Max. Typical Switching Storage Current*

Contextual Info: Heavy Duty Enclosure Coupling Cast aluminum. Large thrust flange. Fastens with 4 hex socket screws. Adjustable torque resistance. Features a rotation range of 300°. Ship Wt. Part No. System A B C D E F lbs. R147-025-000R 50 115 50 R147-025-200R 80 145 80

2X40

Abstract: FST8130 FST8135 FST8140 FST8145 FST 460
Contextual Info: Schottky MiniMod FST 81 Dim. Inches A C E F G H J K L M N P Millimeter Minimum Maximum Minimum Maximum Notes 1.180 .027 .350 1.490 .695 .088 .240 .115 .460 .065 .151 .015 1.195 .037 .370 1.510 .715 .098 .260 .135 .480 .085 .161 .025 Microsemi Catalog Number

40c208

Contextual Info: Silicon Controlled Rectifier Series 40C D im In c h e s M in im u m A B C E F G H J K M N P R S Note 1: 1 / 4 - 2 8 U N F-3A Forward k Reverse Repetitive Blocking M a xim um N o te s 1 .677 -1.200 .427 .115 - .200 .120 - .065 .145 .055 .025 17.20 .685

UFT70

Abstract: UFT7005 UFT7010 UFT7015 UFT7020 UFT7120 UFT7130 UFT7140 UFT7150 UFT7250
Contextual Info: U lt r a f a s t Recovery Modules UFT70, 71 & 72 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A C E F G H J K L M N P 1.180 .027 .350 1.490 .695 .088 .240 .115 .460 .065 .151 .015 Microsemi R epetitive Peak Working Peak Reverse Voltage Catalog Number

Contextual Info: Schottky MiniMod FST 81 Dim. Inches A C E F G H J K L M N P Millimeter Minimum Maximum Minimum Maximum Notes 1.180 .027 .350 1.490 .695 .088 .240 .115 .460 .065 .151 .015 1.195 .037 .370 1.510 .715 .098 .260 .135 .480 .085 .161 .025 Microsemi Catalog Number

EPC3078-6

Abstract: EPC3078-7 EPC3078-1 EPC3078-2 EPC3078-3 EPC3078-4 EPC3078-5
Contextual Info: Off-Line PC Mount Transformer EPC3078-X ELECTRONICS INC. • Dual Primaries : 115 V / 230 V • UL 94V-0 Recognized Components • UL 1446 Class F Insulation System • Meets or exceeds CSA/TUV/VDE Specifications for Creepage, Clearance and Dielectric Strength

EPC3079-1

Abstract: EPC3079-2 EPC3079-3 EPC3079-4 EPC3079-5 EPC3079-6 EPC3079-7
Contextual Info: Off-Line PC Mount Transformer EPC3079-X ELECTRONICS INC. • Dual Primaries : 115 V / 230 V • UL 94V-0 Recognized Components • UL 1446 Class F Insulation System • Meets or exceeds CSA/TUV/VDE Specifications for Creepage, Clearance and Dielectric Strength

MA141WA

Abstract: 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’ 152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q MAI 11 MA112 MAI 13 M A 115 MAI 16 MA132A MA13ZK MA132WA MA132WK MAI 3 3 « Vrrm töT fö"F » T tt s m ffl * Ct pF 0. 6 2 15 2 2 1.2

Contextual Info: Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A C E F G H J K L M N P 1.180 .027 .350 1.490 .695 .088 .240 .115 .460 .065 .151 .015 1.195 .037 .370 1.510 .715 .098 .260 .135 .480 .085 .161 .025 29.97 0.69 8.89 37.85 17.65 2.24 6.10 2.92 11.68

ASI10672

Abstract: UHBS60-1 transistor 355
Contextual Info: UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for PACKAGE STYLE .230 6L FLG FEATURES: A .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 9.0 A VCBO

ASI10580

Contextual Info: CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI CBSL6 is Designed for A .040x45° FEATURES: B C 2XØ.130 4X .025 R • • • Omnigold Metalization System .115 .430 D E F .125 G H I MAXIMUM RATINGS J K 2.4 A IC DIM

ASI10669

Abstract: UHBS15-2
Contextual Info: UHBS15-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-2 is Designed for PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 2.0 A VCBO

ASI10668

Abstract: UHBS15-1
Contextual Info: UHBS15-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-1 is Designed for PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 2.0 A VCBO

05010G0F

Abstract: 05002GOF 05004GOF 05006GOF 05008GOF 05012G0F
Contextual Info: Silicon Controlled Rectifier Series 050 Dim. Inches Minimum A B C D E F G H J K M N P R S Note 1: 1 / 4 -2 8 UN F-3A Note 2: Full thread within 2 1/2 threads Microsemi Catalog Number Maxim um Minimum M axim um N o tes 1 .677 - 1.200 .427 .115 - .220

ph byw29 100

Abstract: UF810 VHE1402
Contextual Info: Ultra Fast Recovery Rectifiers UF810 - UF820 —C Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes —B .390 .045 .180 .245 .550 .139 .100 A B C D E F G H J K L M N P Base Cathode _1 .415 .055 .190 .260 .650 .155 .120 .250 .580 .210 .025 .115

cbsl30 application note

Abstract: ASI10582 CBSL30
Contextual Info: CBSL30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI CBSL30 is Designed for A .040x45° B C 2XØ.130 4X .025 R FEATURES: .115 .430 D • • • Omnigold Metalization System E F .125 G H I J K MAXIMUM RATINGS 7.5 A IC 48V