F 10N60 C Search Results

F 10N60 C Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
LM2907MX		Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907N-8/NOPB		Texas Instruments	Frequency to Voltage Converter 8-PDIP -40 to 85
LM2917MX-8/NOPB		Texas Instruments	Frequency to Voltage Converter 8-SOIC -40 to 85
LM2907M		Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917N/NOPB		Texas Instruments	Frequency to Voltage Converter 14-PDIP -40 to 85

F 10N60 C Price and Stock

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onsemi FQPF10N60C MOSFET N-CH 600V 9.5A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQPF10N60C	Tube			1,000	1 - 10 - 100 - 1000 $1.15 10000 $1.15	Buy Now
Avnet Americas	FQPF10N60C	Tube			527	1 - 10 - 100 - 1000 $1.24 10000 $1.18	Buy Now
Newark	FQPF10N60C	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FQPF10N60C		426			1 - 10 - 100 - 1000 - 10000 -	Get Quote
FLIP ELECTRONICS FQPF10N60C MOSFET N-CH 600V 9.5A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQPF10N60C	Tube			426	1 - 10 - 100 - 1000 $2.40 10000 $2.40	Buy Now
onsemi FQPF10N60CT MOSFET N-CH 600V 9.5A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQPF10N60CT	Tube			1,000	1 - 10 - 100 - 1000 $0.73 10000 $0.73	Buy Now
Alpha & Omega Semiconductor AOWF10N60C N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AOWF10N60C	Reel			1,000	1 - 10 - 100 - 1000 $0.75 10000 $0.65	Buy Now
onsemi FQPF10N60CF MOSFET N-CH 600V 9A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQPF10N60CF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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F 10N60 C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10N60G Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	10N60 10N60 O-220 O-220F O-220at QW-R502-119	PDF
10N60L Abstract: 10N60G Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60L 10N60G	PDF
10N60G TO-220F Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	10N60 10N60 QW-R502-119 10N60G TO-220F UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l	PDF
tf 10n60 Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	10N60 10N60 QW-R502-119 tf 10n60 MOSFET 10n60 equivalent+of+10N60+mosfet	PDF
10N60A Abstract: IGBT 10N60 10N60 10N60 e N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	10N60A 10N60 10N60 10N60A 10N60U1 IGBT 10N60 10N60 e N60A	PDF
UTC10N60 Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	10N60 10N60 QW-R502-119 UTC10N60 utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10N60G-TQ2-T 10N60L-TQ2-T	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	10N60 10N60 10N60L QW-R502-119	PDF
10N60G TO-220F Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60G TO-220F MOSFET 10n60 utc 10n60l TO-220-F2 10N60G	PDF
Contextual Info: □ IX Y S Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability <> V CES *C 25 V CE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions VCES Tj = 25° C to 150°C 600 V Vtcgr Tj = 25°C to 150°C; RGE = 1 MD	OCR Scan	IXSH10N60 IXSH10N60A O-247	PDF
10N60A Abstract: IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60 Contextual Info: Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability VCES IC 25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	IXSH10N60 IXSH10N60A O-247 10N60A IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS	PDF