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F54-03
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Weinschel
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Fixed Coaxial Attenuator |
Original |
PDF
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73.19KB |
1 |
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F54-06
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Weinschel
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Fixed Coaxial Attenuator |
Original |
PDF
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73.19KB |
1 |
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F540L
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Fox Electronics
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2.5V 5 x 3.2mm Hcmos Ceramic SMD w/ Standby |
Original |
PDF
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79.01KB |
1 |
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F540L
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Fox Electronics
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HCMOS 5x3.2mm 2.5V SMD Oscillator |
Original |
PDF
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131.31KB |
2 |
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F540LR
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Fox Electronics
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HCMOS 5x3.2mm 2.5V SMD Oscillator |
Original |
PDF
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131.31KB |
2 |
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F540LR
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Fox Electronics
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2.5V 5 x 3.2mm Hcmos Ceramic SMD w/ Standby |
Original |
PDF
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79.01KB |
1 |
UF5400
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SUNMATE electronic Co., LTD
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Ultrafast recovery rectifier diodes in DO-201AD package, 50 to 1000V reverse voltage, 3.0A average rectified current, 150A non-repetitive surge current, low forward voltage drop, operating junction temperature from -65 to +125°C.Ultrafast recovery rectifier diodes in DO-201AD package, 50-1000V reverse voltage, 3.0A average rectified current, 150A peak surge current, low forward voltage drop, and operating junction temperature from -65 to +125°C. |
Original |
PDF
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UF5403
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Microdiode Semiconductor
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Reverse voltage 50-1000V, forward current 3.0A, ultra fast switching, low reverse leakage, high forward surge, DO-201AD. |
Original |
PDF
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UF5408
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AK Semiconductor
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3A surface mount silicon rectifier in DO-201AD package with reverse voltage ratings from 100 to 1000V, low forward voltage drop, and operating temperature range of -55 to +150°C. |
Original |
PDF
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IRF540NS
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SLKOR
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Fast switching, 100% avalanche tested, VDSS 100V, ID 33A, IDM 120A, VGSS ±20V, EAS 335mJ, PD 110W, TJ -55~+150ºC. |
Original |
PDF
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UF5408
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JCET Group
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3.0A average forward current, 50V to 1000V repetitive peak reverse voltage, high surge current capability, DO-27 plastic-encapsulated rectifier diode suitable for high-efficiency rectification applications. |
Original |
PDF
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UF5401
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Microdiode Semiconductor
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50-1000V, 3.0A, DO-201AD, UL 94V-0, high surge, low leakage, 250°C/10s soldering. |
Original |
PDF
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UF5406
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AK Semiconductor
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High efficiency silicon rectifier in DO-201AD/DO-27 package, with reverse voltage ratings from 100 to 1000 V, forward current of 3.0 A, and surge current up to 150 A.3A high efficiency silicon rectifier in DO-201AD package with reverse voltage ratings from 100 to 1000V, low forward voltage drop, and lead-free construction for surface mount applications. |
Original |
PDF
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UF5405
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Microdiode Semiconductor
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Reverse voltage 50-1000V, forward current 3.0A, UL 94V-0, ultra fast switching, low reverse leakage, high surge current, 250°C/10s, DO-201AD, 1.10g. |
Original |
PDF
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UF5407
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Microdiode Semiconductor
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Ultra fast rectifiers, 50-1000V reverse voltage, 3.0A forward current, UL 94V-0, DO-201AD case, solderable terminals, 1.10 grams. |
Original |
PDF
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UF5408
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SUNMATE electronic Co., LTD
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Ultrafast recovery rectifier diodes in DO-201AD package, 50 to 1000V reverse voltage, 3.0A average rectified current, 150A non-repetitive surge current, low forward voltage drop, operating junction temperature from -65 to +125°C. |
Original |
PDF
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UF5400
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Microdiode Semiconductor
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Reverse voltage 50-1000V, forward current 3.0A, DO-201AD, UL 94V-0, high temp soldering 250°C/10s. |
Original |
PDF
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UF5403
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SUNMATE electronic Co., LTD
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Ultrafast recovery rectifier diodes in DO-201AD package, 50-1000V reverse voltage, 3.0A average rectified current, 150A peak surge current, low forward voltage drop, and operating junction temperature from -65 to +125°C. |
Original |
PDF
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UF5406
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SUNMATE electronic Co., LTD
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Ultrafast recovery rectifier diodes in DO-201AD package, 50 to 1000V reverse voltage, 3.0A average rectified current, 150A non-repetitive surge current, low forward voltage drop, operating junction temperature from -65 to +125°C. |
Original |
PDF
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UF5404
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SUNMATE electronic Co., LTD
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Ultrafast recovery rectifier diodes in DO-201AD package, 50 to 1000V reverse voltage, 3.0A average rectified current, 150A non-repetitive surge current, low forward voltage drop, operating junction temperature from -65 to +125°C. |
Original |
PDF
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UF5400
