EXTERNAL CHARGE PUMP ON FPC 3X Search Results

Contextual Info: Philips Semiconductors Objective specification 2.5GHz low voltage fractional-N synthesizer SA8016 Separate power and ground pins are provided to the analog and digital circuits. The ground leads should be externally short-circuited to prevent large currents flowing across the die and thus causing

Contextual Info: IN TEG R A TED CIR C U ITS SA8016 2.5GHz low voltage fractional-N synthesizer Objective specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 16 PHILIPS Objective specification Philips Semiconductors 2.5GHz low voltage fractional-N synthesizer

k3131

Contextual Info: Philips Semiconductors Objective specification 1.3GHz low voltage fractional-N dual synthesizer FEATURES SA7026 Separate power and ground pins are provided to the analog and digital circuits. The ground leads should be externally short-circuited to prevent large currents flowing across the die and thus causing

SA8016

Abstract: philips pocket radio SR00602 TSSOP16
Contextual Info: INTEGRATED CIRCUITS SA8016 2.5GHz low voltage fractional-N synthesizer Objective specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 13 Philips Semiconductors Objective specification 2.5GHz low voltage fractional-N synthesizer SA8016

philips pocket radio

Abstract: TSSOP16 SA7016 SR00602
Contextual Info: INTEGRATED CIRCUITS SA7016 1.3GHz low voltage fractional-N synthesizer Objective specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 13 Philips Semiconductors Objective specification 1.3GHz low voltage fractional-N synthesizer SA7016

SA8016

Abstract: SR00602 TSSOP16 25-kHz
Contextual Info: Philips Sem iconductors O bjective specification 2.5GHz low voltage fractional-N synthesizer SA8016 Separate power and ground pins are provided to the analog and digital circuits. The ground leads should be externally short-circuited to prevent large currents flowing across the die and thus causing

Contextual Info: INTEGRATED CIRCUITS SA8027 2.5 GHz low voltage, low power fractional-N dual frequency synthesizer Preliminary specification Philips Semiconductors 2000 Sep 11 Philips Semiconductors Preliminary specification 2.5GHz low voltage, low power fractional-N dual frequency synthesizer

Contextual Info: INTEGRATED CIRCUITS SA8027 2.5 GHz low voltage, low power fractional-N dual frequency synthesizer Preliminary specification Supersedes data of 2000 Sep 11 Philips Semiconductors 2000 Nov 29 Philips Semiconductors Preliminary specification 2.5GHz low voltage, low power

SA7016

Abstract: TSSOP16 POWER DIVIDER 3GHz
Contextual Info: Philips Sem iconductors O bjective specification 1.3GHz low voltage fractional-N synthesizer SA7016 Separate power and ground pins are provided to the analog and digital circuits. The ground leads should be externally short-circuited to prevent large currents flowing across the die and thus causing

passive RF divider

Abstract: PHP12 philips N7
Contextual Info: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional–N dual frequency synthesizer Preliminary specification Philips Semiconductors 1997 Aug 07 Philips Semiconductors Preliminary specification 2.5GHz low voltage fractional–N dual synthesizer SA8026

pocket Scale block diagram

Contextual Info: IN TEG R ATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Preliminary specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 16 PHILIPS Philips Semiconductors Preliminary specification 2.5GHz low voltage fractional-N dual synthesizer

SA7026

Abstract: SA7026DK SR00602
Contextual Info: INTEGRATED CIRCUITS SA7026 1.3GHz low voltage fractional-N dual frequency synthesizer Objective specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 13 Philips Semiconductors Objective specification 1.3GHz low voltage fractional-N dual synthesizer

SA8026

Abstract: SA8026DH SR00602
Contextual Info: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional–N dual frequency synthesizer Preliminary specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 13 Philips Semiconductors Preliminary specification 2.5GHz low voltage fractional–N dual synthesizer

SA8028

Abstract: tcxo 13MHz philips
Contextual Info: INTEGRATED CIRCUITS SA8028 2.5 GHz sigma delta fractional N synthesizer and 750 MHz auxiliary synthesizer Objective specification Philips Semiconductors 2000 Sep 21 Philips Semiconductors Objective specification 2.5 GHz sigma delta fractional N synthesizer and

N15 ICP

Abstract: SA8016 SR00602 TSSOP16 tcxo philips
Contextual Info: INTEGRATED CIRCUITS SA8016 2.5GHz low voltage fractional-N synthesizer Product specification Supersedes data of 1999 Mar 08 Philips Semiconductors 1999 Apr 16 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N synthesizer SA8016 GENERAL DESCRIPTION

tcxo 13MHz

Abstract: SA7016 SA7016DH SR00602 TSSOP16
Contextual Info: INTEGRATED CIRCUITS SA7016 1.3GHz low voltage fractional-N synthesizer Product specification Supersedes data of 1999 Apr 20 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 GENERAL DESCRIPTION

SA8016

Abstract: TSSOP16
Contextual Info: Philips Sem iconductors O bjective specification 2.5GHz low voltage fractional-N synthesizer FEATURES SA8016 The synthesizer operates at VCO input frequencies up to 2.5 GHz. The synthesizer has fully programm able main and reference dividers. All divider ratios are supplied via a 3-wire serial

Contextual Info: INTEGRATED CIRCUITS SA7016 1.3GHz low voltage fractional-N synthesizer Product specification Supersedes data of 1998 Oct 16 Philips Semiconductors 1999 Apr 20 Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 GENERAL DESCRIPTION

Contextual Info: IN TEG R A TED C IR C U ITS [ M m g y n iT SA7026 1.3GHz low voltage fractional-N dual frequency synthesizer Objective specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 16 PHILIPS Objective specification Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer

SA7016

Abstract: SR00602 TSSOP16
Contextual Info: INTEGRATED CIRCUITS SA7016 1.3GHz low voltage fractional-N synthesizer Product specification Supersedes data of 1998 Oct 16 Philips Semiconductors 1999 Apr 20 Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 GENERAL DESCRIPTION

SA7016

Abstract: TSSOP16
Contextual Info: Philips Sem iconductors O bjective specification 1.3GHz low voltage fractional-N synthesizer FEATURES SA7016 Separate power and ground pins are provided to the analog and digital circuits. The ground leads should be externally short-circuited to prevent large currents flowing across the die and thus causing

tcxo philips

Abstract: philips pocket radio 19.44MHz TCXO philips tcxo SA8016 SA8016DH SA8016WC SR00602 TSSOP16
Contextual Info: INTEGRATED CIRCUITS SA8016 2.5GHz low voltage fractional-N synthesizer Product specification Supersedes data of 1999 Apr 16 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N synthesizer SA8016 GENERAL DESCRIPTION

SA8026

Abstract: SA8026DH SR00602
Contextual Info: Philips Sem iconductors Prelim inary specification 2.5GHz low voltage fractional-N dual synthesizer FEATURES SA8026 The synthesizer operates at VCO input frequencies up to 2.5 GHz. The synthesizer has fully programm able main, auxiliary and reference dividers. All divider ratios are supplied via a 3-wire serial

SR01800

Abstract: SA7026 SA7026DH SR00602
Contextual Info: INTEGRATED CIRCUITS SA7026 1.3GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1999 Apr 16 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 1.3GHz low voltage fractional-N dual synthesizer