EW SOT Search Results

Hall TLE 4905

Abstract: EW-460 hall sot223 asahi EW-410 tle4905 TLE4905G EW-400 EW-450 EW-510
Contextual Info: Cross reference list Hall IC switches Asahi Part No. Asahi Type Package EW 400 EW 410 EW 450 EW 460 EW 500 EW 510 EW 550 EW 560 Latch Latch Switch Switch Latch Latch Switch Switch SOT223 like SOT223 like SOT223 like SOT223 like P-SSO-3 like P-SSO-3 like P-SSO-3 like

Contextual Info: N ew P r o d u c t BCX70 SERIES SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Suited for low level, low noise, low frequency applications in hybrid circuits. Low Current, Low Voltage.

SFH6941

Abstract: IEC10
Contextual Info: EW SFH6941 N LOW CURRENT INPUT MINI OPTOCOUPLER Preliminary Data Sheet FEATURES • Transistor Optocoupler in SOT223 Package • End Stackable, 1.27 mm Spacing • Low Current Input • Very High CTR, 150% Typical at IF=1 mA, VCE=0.5V • Good CTR Linearity Versus Forward Current

SFH6941T

Contextual Info: EW SFH6941T N LOW CURRENT INPUT MINI OPTOCOUPLER Preliminary Data Sheet Package Dimensions in mm FEATURES • • • • • • • • • • • • Transistor Optocoupler in SOT223 Package End Stackable, 1.27 mm Spacing Low Current Input Very High CTR, 150% Typical

power darlington npn transistor

Abstract: 7239 CZTA27 VEBo-10V
Contextual Info: N EW Central CZTA27 TM Semiconductor Corp. NPN HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

HMC197

Abstract: 74HC04 74HCT04 HMC221 FR4 dielectric
Contextual Info: '9 9 n ew ! HMC197 MICROWAVE CORPORATION GaAS MMIC SOT26 SPDT SWITCH DC - 3 GHz FEBRUARY 2001 V01.0700 Features General Description LOW INSERTION LOSS: 0.4 dB The HMC197 is a low-cost SPDT switch in a 6lead SOT26 plastic package for use in general switching applications which require very low

142-0701-806

Abstract: HMC226 74HC04 74HCT04
Contextual Info: '9 9 n ew ! HMC226 MICROWAVE CORPORATION GaAs MMIC +3V TRANSMIT / RECEIVE SWITCH DC - 2.0 GHz FEBRUARY 2001 V01.0700 Features General Description LOW INSERTION LOSS: 0.6 dB The HMC226 is a low-cost SPDT switch in a 6-lead SOT26 package for use in transmitreceive applications which require very low

HMC221

Abstract: 74HC04 74HCT04 HMC197 spdt switch dbm
Contextual Info: '9 9 n ew ! HMC221 MICROWAVE CORPORATION GaAS MMIC SOT26 SPDT SWITCH DC - 3 GHz V01.0700 FEBRUARY 2001 Features General Description LOW INSERTION LOSS: 0.4 dB The HMC221 is a low-cost SPDT switch in a 6lead SOT26 plastic package for use in general switching applications which require very low

74HC04

Abstract: 74HCT04 HMC195 FR4 dielectric
Contextual Info: '9 9 n ew ! HMC195 MICROWAVE CORPORATION GaAS MMIC SOT26 T/R SWITCH DC - 2.5 GHz FEBRUARY 2001 V01.0700 Features General Description LOW INSERTION LOSS: 0.4 dB The HMC195 is a low-cost SPDT switch in a 6-lead SOT26 package for use in transmitreceive applications which require very low

"Silicon Controlled Rectifier"

Abstract: CZS5064 current sensing 400V
Contextual Info: N Central EW TM Semiconductor Corp. CZS5064 SILICON CONTROLLED RECTIFIER DESCRIPTION The CENTRAL SEMICONDUCTOR CZS5064 type is an epoxy molded PNPN Silicon Controlled Rectifier manufactured in an epoxy molded surface mount package, designed for control systems and sensing circuit

Contextual Info: That H EW LETT WL'EM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High P erform ance, M edium Pow er, and Low N oise A p p lications 4-lead SC-70 SOT-343 Surface Mount Plastic

HSMP-381

Contextual Info: WhoI k "EM H EW LETT PACKARD Surface Mount PIN Diodes in SOT-323 SC-70 3-Lead Technical Data HSM P-381B/C/E/F HSM P-386B/C/E/F HSM P-389B/C/E/F HSMP-481B, -482B, -489B F eatures • D iodes Optimized for: Low Current Switching Low Distortion Attenuating

MARKING d5 SOT363

Abstract: sot863 46 sot363 11BASIC
Contextual Info: H EW LET T * PA CK A RD 1.5 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-52063 F eatu res • Ultra-Miniature Package • Single 5 V Supply 30 mA Surface M ount SOT-363 (SC-70) Package • 2 2 d B G a in • 8 dBm PidB • Unconditionally Stable

Contextual Info: T h at H EW LETT miltim PACKARD Infrared IrDA Compliant Transceiver Technical Data HSDL-2100 Features • Small Module Package - height o f 5.5 mm max. • Integrated EMI Shield - excellent Noise Immunity • Lower Ileda Current • IEC825-Class 1 Eye Safe

Contextual Info: H EW LETT PACKARD MSA-0711 M O D A M P C a sca d a b le Silicon Bipolar Monolithic M icrow ave Integrated Circuit A m plifiers Features SOT-143 Package • Cascadable 50 Q. Gain Block LO W PR O F ILE • 3 dB Bandwidth: DC to 1.9 GHz 0.92 0.036 0.78 (0.031)

2N2222AUB

Abstract: 2n2222aub 3-pin 2N2221AUA 2N2907AUB sot-40 2N2221AUB 2N2222AUA 2N2906AUA 2N2906AUB 2N2907AUA
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL SURFACE MOUNT NPN PACKAGE 4-PIN H SOT 3-PIN H SOT DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N2221AUA 40 0.8 40/120@A50/10 0.4@150/15 8 250 2N2222AUA 40 0.8 100/300@150/10 0.4@150/15 8 250 2N2221AUB 40 0.8 40/120@l 50/10

1B60

Abstract: AT31011
Contextual Info: Whpïï mitiM H EW LETT PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011:0.9 dB NF, 13 dB GA

Contextual Info: Features E37 M SA-0611 M O D A M P C a sca d a b le S ilico n Bipolar M onolithic M icrow ave Integrated Circuit Am plifiers □ □lOO'J? H EW LETT PACKARD «HPA Hi* SOT-143 Plastic Package • Cascadable 50 £2 Gain Block LOW PROFILE 4447504 • 3 dB Bandwidth: DC to 0.7 GHz

rce marking

Abstract: 2dd2098r 4A SOT89 MARKING CODE
Contextual Info: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A

Contextual Info: Wfinl H EW LETT m L rJk PACKARD 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features • Ultra-Miniature Package • Internally Biased, Single 5 V Supply 12 mA • 20.5 dB Gain • 3 dB NF • Unconditionally Stable Applications • Amplifier for Cellular,

Contextual Info: A d van ced R ew ork P ractice K it This kit was designed especially for rew ork stations. Low cost way to evaluate equipment and employee training or class room practice. Convenient parts storage box holds all o f the parts you need in one place. Rework Practice

sot 363 marking J IX

Contextual Info: W Â^ Ê H EW LETT ItfS l PACKARD Surface Mount RF Schottky Diodes in SOT-363 SC-70, 6 Lead Technical Data HSM S-280L/M/N/P/R HSMS-281L HSM S-282L/M/N/P/R Features • Surface Mount SOT-363 Package • Low Turn-On Voltage (A s Low as 0.34 V at 1 mA) • Low FIT (Failure in Tim e)

Contextual Info: Wha\ H EW LETT WÍEMP A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTO/CJTC 1023 Series Features Description Pin Configuration • F requency Range: 10 to 1000 MHz The 1023 Series is a thin-film bipolar RF amplifier for higher

12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: stereo amplifier 400W permedia TLC320AD55 TVP4020 3Dlabs tsl230 color sensor permedia 3dlabs 400w mono amplifier circuit TLC8044
Contextual Info: MIXED SIGNAL & LINEAR A U GU S T V O L U M E N • 1 9 9 7 2 3 EW Showcase ! See page 4 Inside ■ Single chip solution from CCD output to digital domain ■ ADC provides high speed, resolution with low power consumption ■ Single-channel PCMCIA power distribution switch