EW 512 C Search Results

EW-512 hall effect sensor

Abstract: EW-512 EW-412 512 hall EW512 5000PCS ASAHI EW-400 EW-500 512 hall effect sensor
Contextual Info: EW-412, EW-512 20 SUPPLY VOLTAGE DERATING CURVE 15 BIPOLAR HALL EFFECT LATCHES Vcc V (Fig. 1) 10 5 EW-512 –40 ASAHI HALL EFFECT ICs –20 20 40 60 80 100 120 80 100 120 Ambient Temperature. Ta (˚C) ASAHI KASEI ELECTRONICS Hall Effect ICs are composed of a Ultla-high sensitive InSb Hall element and a signal processing IC

Contextual Info: Hybrid Hall Effect ICs EW-series EW-512 Shipped in bulk 500pcs/Bag EW-512 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 4.5~18Ｖ Hall Element Continuous

EW-512 hall effect sensor

Abstract: EW-512 4518 APPLICATION CIRCUITS 512 hall 512 hall effect sensor
Contextual Info: Hybrid Hall Effect ICs EW-series EW-512 Shipped in bulk 500pcs/Bag EW-512 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 4.5~18Ｖ Hall Element Continuous

74LS170

Abstract: 74LS670 SN54LSXXXJ SN74LSXXXD SN74LSXXXN
Contextual Info: SN54/74LS170 4 x 4 REGISTER FILE OPEN-COLLECTOR The TTL / MSI SN54 / 74LS170 is a high-speed, low-power 4 x 4 Register File organized as four words by four bits. Separate read and write inputs, both address and enable, allow simultaneous read and write operation.

Contextual Info: 4x4 REGISTER FILE DESCRIPTION The T54LS170/T74LS170 is a high speed, lowpower 4 x 4 Register File organized as four word by four bits. Separate read and write inputs, both address adn enable, allow simultaneous read and write operation. Open collector outputs make it possible, to connect

Contextual Info: ses 4 x 4 REGISTER FILE WITH 3-STATE OUTPUTS D E S C R IP T IO N The TTL/MSIT54LS670/T74LS670 is a high speed, low-power 4 x 4 Register File organized as four words by four bits. Separate read and write inputs, both address and enable, allow simultaneous read

Contextual Info: CAT35C204H Preliminary CAT35C204H - High Endurance 1MHz OPERATION 4K BIT SERIAL E2PROM DESCRIPTION FEATURES The CAT35C204H is a high endurance 4K bit Serial E2PROM memory device organized in 256 registers of 16 bits ORG pin at Vcc or 512 registers of 8 bits each (ORG pin at GND). Each

307-600

Abstract: 385-1 Texas
Contextual Info: 8 0 0 2 8 8 -S o n y Sony Component Products Company Sales Offices Sales Representative Offices: Alabam a: Rep, Inc., 205/881-9270 Alaska: Sony, 408/432-0190 Arkansas: B-P S ale s, 214/234-8438 Arizona: R eptronix, 602/230-2630 California: (San Diego) A ddern, 619/729-9216

Oriole

Abstract: nu-horizons Oriole Electronics contrans J*M Microtek 876-3132 94-4980 supertex catalog
Contextual Info: ChapterB Worldwide Representatives9 Distributors, and Supertax Sales Offices Supertexinc. Representatives - North America W estern U S T errito ries A rizona Summit Sales 7802 East Gary Road, Suite 600 Scottsdale, A Z 85260 Tel: 480 998-4850 Fax: (480) 998-5274

oximetr

Abstract: magnetic stripe data conversion interfacing 8051 with magnetic stripe readers "Phase locked loops" glucose sensor
Contextual Info: A passion for performance. Mixed-Signal solutions from Aeroflex Colorado Springs Standard products Custom ASICs Mixed-Signal modules Circuit card assemblies Mixed-Signal From ICs to Systems R adHard AS I Cs M I X E D-S I G NAL S O LUTI O N S ~ F R O M I Cs TO SYSTE M S

Contextual Info: S G S-THOHSON 45^ » ' ' W 7^237 003343Ô SGS-THOEV1SO»"! ltL i * i 4 SGTH~ T74LS170 -r - v é - ô ? - o q - 4 x 4 R EG ISTER FILE • ■ ■ •a SIMULTANEOUS READ/WRITE OPERATION EXPANDABLE TO 512 WORDS OF n-BIT TYPICAL ACCESS TIME OF 20 ns LOW LEAKAGE OPEN COLLECTOR OUT­

CHN 530

Abstract: chn 723 chn 448 CHN 727 CS4125 CS4130 chn 711 TSMC sram1 CS4100 CS4110
Contextual Info: CS4100 ADPCM Speech Coders Virtual Components for the Converging World The CS4100 family of adaptive differential pulse code modulators ADPCMs is designed to provide high performance solutions for a broad range of applications requiring speech compression and decompression. These

chn 723

Abstract: TSMC 180nm dual port sram chn 448 CHN 727 chn 501 chn 711 CHN 450 TSMC 180nm single port sram tsmc 180nm sram TSMC 180nm
Contextual Info: CS4100 TM ADPCM Speech Coders Virtual Components for the Converging World The CS4100 family of adaptive differential pulse code modulators ADPCMs is designed to provide high performance solutions for a broad range of applications requiring speech compression and decompression.

01XXXXXXXXX

Abstract: CSSK
Contextual Info: HOLTEK f r HT93C76/C86 CMOS 8K /16K-Bit Serial EEPROM Features • • • • • • W ord/chip e ra se a n d w rite o p era tio n A u to -in crem en t re a d o p eratio n P ro g ram m in g S ta tu s In d ica to r S oftw are a n d h a rd w a re controlled w rite

stk14c88-3nf35i

Contextual Info: STK14C88-3 256 Kbit 32 K x 8 AutoStore nvSRAM Functional Description • 35 ns and 45 ns Access Times ■ Automatic nonvolatile STORE on power loss ■ Nonvolatile STORE under hardware or software control ■ Automatic RECALL to SRAM on power up ■ Unlimited Read/Write endurance

Contextual Info: HOLTEK r r HT93L C66 4K 3-Wire CMOS Serial EEPROM Features • • • • • A utom atic erase-before-w rite operation Word/chip erase an d w rite operation Write operation w ith built-in tim er Softw are controlled w rite protection 10-year d ata retention afte r 100K rewrite

CDIP32

Abstract: STK14C88-NF35I
Contextual Info: STK14C88 32 K x 8 AutoStore nvSRAM Description • 25 ns, 35 ns, and 45 ns read access and R/W cycle time ■ Unlimited read/write endurance The Cypress STK14C88 is a 256 Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each

C254D

Contextual Info: KM416V254DT ELECTRONICS CMOS DR AM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

tic 41c

Contextual Info: jjjm iM W ÆmSmmkjjjjjj jmSSm «HHH •!—mmmm DEVICES INCORPORATED FEATURES □ First-In/First-Out FIFO using Dual-Port Memory □ Write and Read Clocks can be synchronous or asynchronous □ □ □ □ Advanced CMOS Technology High Speed — to 15 ns Cycle Time

01XXXXXXXXX

Abstract: 1024X16
Contextual Info: HOLTEK r r HT93L C76/L C86 CMOS 8 K / 16K-BH Serial EEPROM Features • • • • • • • • • Wide range operating voltage - W rite: 2.4~5.5V - Read: 2.0~5.5V Low power consumption - O perating: Max. 5mA - Standby: Max. 2|_lA U ser selectable in te rn a l organization

Contextual Info: Self-Cooled High Power Amplifier 50Ω 50W 20 to 512 MHz Features Applications • • • • • • • • • • • • • • • LZY-1 saturated power 50W typ. high power with low distortion, -32 dBc typ. wide bandwidth, usable 10 - 525 MHz high gain, 42 dB typ.

rbbb

Contextual Info: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: CATAUT5T S E M IC O N D U C T O R IN C . 223J CALLE D E LUNA, SANTA CLARA, CA 95054 Téléphoné: 408 748-7700 CAT35C104 1MHz OPERATION 4K BIT SERIAL E2PROM DESCRIPTION FEATURES The C A T 3 5 C 1 04 is a 4K bit serial E2PROM memory device organized in 256 registers of 16 bits

Contextual Info: C artridge Style LED Panel Indicator Lamps FEATURES INCLUDE • Three lead diode te s t options • Unique front panel replaceability • Tw o/three pin bi­ colours • N ew Sunlight readable LEDs • Integral resistors up to 1 10 VAC • C artridge and wiring sockets