EUV PHOTODIODE Search Results
EUV PHOTODIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| OPT301M |
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Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 |
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| OPT101P-J |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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| OPT101P-JG4 |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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| OPT101PG4 |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 |
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| OPT101P |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 |
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EUV PHOTODIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PHOTODIODE 331 mm2 SXUV300C FEATURES • Rectangular active area • Excellent stability after EUV exposure • Windowless package for responsivity to 1nm • Ceramic package Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS |
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SXUV300C AXUV300CTS | |
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Contextual Info: Ultrafast Laser Systems 2014 Product Catalog Superior Reliability & Performance Ultrafast Laser Systems Introduction Applications: • Pump and Probe Studies • Time-domain Spectroscopy • Surface Sum Frequency Generation • EUV and X-ray Generation • Attosecond Pulse Generation |
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Contextual Info: PHOTODIODE 100 mm2 SXUV100 FEATURES • Single active area • Detection to 1 nm • Stable response after exposure to EUV/UV conditions • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area |
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SXUV100 | |
On the Compression and Blocking Distortion of Semiconductor-Based VaractorsContextual Info: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 On the Compression and Blocking Distortion of Semiconductor-Based Varactors |
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