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    EUV PHOTODIODE Search Results

    EUV PHOTODIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPT301M
    Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy
    OPT101P-J
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P-JG4
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101PG4
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy
    OPT101P
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy

    EUV PHOTODIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PHOTODIODE 331 mm2 SXUV300C FEATURES • Rectangular active area • Excellent stability after EUV exposure • Windowless package for responsivity to 1nm • Ceramic package Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS


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    SXUV300C AXUV300CTS PDF

    Contextual Info: Ultrafast Laser Systems 2014 Product Catalog Superior Reliability & Performance Ultrafast Laser Systems Introduction Applications: • Pump and Probe Studies • Time-domain Spectroscopy • Surface Sum Frequency Generation • EUV and X-ray Generation • Attosecond Pulse Generation


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    PDF

    Contextual Info: PHOTODIODE 100 mm2 SXUV100 FEATURES • Single active area • Detection to 1 nm • Stable response after exposure to EUV/UV conditions • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area


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    SXUV100 PDF

    On the Compression and Blocking Distortion of Semiconductor-Based Varactors

    Contextual Info: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 On the Compression and Blocking Distortion of Semiconductor-Based Varactors


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