EUTECTIC 157 B Search Results

Contextual Info: LGA/BGA SMT Adapter 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 • Email info@advintcorp.com • Internet http://www.advintcorp.com LGA/BGA SMT Adapter Typical Applications LGA Adapter De-balled BGA Adapter

Contextual Info: ADVANCED aKJA« INTERCONNECTIONS. LGA/BGA SMT Adapter 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850/401-823-5200 » Fax 401-823-8723 •Email info@advintcorp.com • Internet http://www.advintcorp.com LGA/BGA SMT Adapter Typical Applications

FRO 021

Abstract: NLT4532 NLT4532T-S14R3 NLT4532T-S6R2 NLT4532T-S3R6 NLT4532T rc 3150
Contextual Info: Leadless LC Traps NLT Series TDK Leadless LC Traps Wire wound LC Chip Traps let you achieve high-density parts mounting onto printed circuit boards. The LC traps can be precisely mounted since they are manufactured with high precision, and their shape is specifically designed to meet the handling requirements of

SW-200

Abstract: SW200
Contextual Info: 5 b 45177 0003102 3 14E D M/A-COM INC/ ANZAC DIV •7 = 5 1 - 1 1 Low Insertion Loss, 0.5 dB Typical Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* F ro m - 5 5 ° C to + 8 5 ° C Frequency Range

Contextual Info: g 'SSLSRÈTSK CMM-10 2.0 to 20.0 GHz GaAs MMIC Power Amplifier Prelim inary P roduct In fo rm atio n Decem ber 1991 Features □ Small Size: 43 x 92 mils □ High Gain □ Directly Cascadable □ Medium Power: +23 dBm □ Ion-Implanted Active Layers □ Silicon Nitride Passivation

AMS104W

Abstract: AMS104Y NaPICa
Contextual Info: Light Sensor AMS1 Light Sensor Cadmium-free sensor with spectral response FEATURES TYPICAL APPLICATIONS 1. Built-in optical filter for spectral response similar to that of the human eye. Peak sensitivity wavelength is 580 nm 1. Brightness detection for LCD backlight

HMC266

Contextual Info: y2 k n ew ! HMC266 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 20 - 40 GHz V01.0300 FEBRUARY 2001 Features General Description INPUT IP3 : UP to +17 dBm The HMC266 chip is a broadband sub-harmonically pumped x2 balanced MMIC passive mixer which can be used as an upconverter

Contextual Info: HIGH POWER FYLP FYLP-1W1W-UWS UWS Features: Radiation Pattern （ Package Dimensions Instant light less than 100ns Applications 15(.59) + - + + - 4(.157) 60° 2(.0787) 8(.315)±0.1(.004) 6(.236)±0.1(.004) 20(.787) 1.3(.05)±0.1(.004) Reading lights (car,bus,aircraft)

FYLP-1W-UWB

Abstract: FYLP-1W eutectic 157
Contextual Info: HIGH POWER FYLP FYLP-1W1W-UWB UWB Features: Radiation Pattern Long operating life Highest flux Available in White Lambertian radiation pattern More energy efficient than incandescent and most halogen lamps Low voltage DC operated Cool beam,safe to the touch

AS 15 f

Contextual Info: Whol H E W L E T T PACKARD Silicon Bipolar Monolithic Am plifiers Technical Data HPMA-0400 HPMA-0435 Features CHIP OUTLINE HPMA-0400 HPMA-0400 • 3 dB Bandwidth: DC to 4.2 GHz ■ 8.3 dB Gain at 1 GHz ■ Unconditionally Stable k>l ■ Cascadable 50 O Gain Block

Contextual Info: 17.0-27.0 GHz GaAs MMIC Receiver R1000-BD May 2007 - Rev 02-May-07 Features Fundamental Integrated Receiver 10.0 dB Conversion Gain 3.5 dB Noise Figure 15.0 dB Image Rejection 60.0 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

R300 diodes

Abstract: b1002 100 XP1001 B1002 XB1002 XU1001
Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias

transistor s11 s12 s21 s22

Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002-BD May 2007 - Rev 02-May-07 Features High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias

B1000

Abstract: Mimix xb1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

9701455-S-J1

Abstract: APH184C
Contextual Info: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps

EFC240B

Contextual Info: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

Contextual Info: SPDT FET Switch TGS8630-XCC DC to 12-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collector TTL Typical Insertion Loss: 2.3-dB at 12-GHz High Isolation: 46-dB through 12-GHz Useable Bandwidth through 18-GHz 3,454 x 2,007 x 0,102 mm 0.136 x 0.079 x 0.004 in.

TGA8622-SCC

Contextual Info: Product Data Sheet June 4, 2001 2 - 20 GHz Gain Block Amplifier TGA8622-SCC Key Features and Performance • • • • • • 2 to 20 GHz Frequency Range 7.5 dB Gain with Greater than 30dB Gain-Control Capability 20 dBm Output Power at 1 dB Gain Compression

q8632

Abstract: TGS8632-XCC
Contextual Info: TGS8632-XCC SPST FET Switch ● ● ● ● ● ● 8632 DC to 18-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collector TTL Typical Insertion Loss 2.3-dB at 18-GHz 1.5:1 Input/Output SWR High Isolation; 43-dB Across Band 2,489 x 1,803 x 0,102 mm 0.098 x 0.071 x 0.004 in.

MMA60

Abstract: 8 mu 0833 MCE Metelics
Contextual Info: MMA601 High Linearity HBT Die FEATURES • • • • + 44 dBm IP3 at 2.1 GHz + 26 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 5000 MHz Operation The MMA601 is an InGaP Heterojunction Bipolar Transistor (HBT) provided

olin 7025

Abstract: 7025 alloy lead frame CDA 194 X10-4 eftec-64t Eftec 64t resistivity table sn 8400 PHYSICAL CONSTANTS OF IC PACKAGE MATERIALS
Contextual Info: Physical Constants of IC Package Materials 5 Table 5-1 through Table 5-3 list typical values for selected properties of materials used in IC packages. Table 5-1. Case Material Characteristics Properties Density Modulus of Elasticity Tensile Strength Units

X01016

Contextual Info: SPDT FET Switch TGS8630-XCC DC to 12-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collector TTL Typical Insertion Loss: 2.3-dB at 12-GHz High Isolation: 46-dB through 12-GHz Useable Bandwidth through 18-GHz 3,454 x 2,007 x 0,102 mm 0.136 x 0.079 x 0.004 in.

Contextual Info: DC to 18-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collect or TTL Typical Insertion Loss 2.3-dB at 18-GHz 1.5:1 Input/ Output SWR High Isolation; 4 3 -dB Across Band 2,489 x 1,803 x 0,102 mm 0.098 x 0.071 x 0.004 in. PHOTO ENLARGEMENT

4288

Abstract: TA 8644 12VV TGS8630-XCC
Contextual Info: TGS8630-XCC SPDT FET Switch ● ● ● ● ● ● 8630 DC to 12-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collector TTL Typical Insertion Loss: 2.3-dB at 12-GHz High Isolation: 46-dB through 12-GHz Useable Bandwidth through 18-GHz 3,454 x 2,007 x 0,102 mm 0.136 x 0.079 x 0.004 in.