MA110
Abstract: topologies pulse transformer driver IGBT APPLICATION igbt with pulse transformer driver igbt driver circuit diagram cut off voltage edfa rise time specifications FS450R12KE3 ma110 eupec eupec igbt pwm igbt dc-dc converter bi-directional switch IGBT driver
Contextual Info: eupec IGBT EiceDRIVER IGBT Driver for medium and high power IGBT Modules Michael Hornkamp eupec GmbH Max-Planck-Straße 5 D-59581 Warstein/ Germany www.eupec.com Abstract While considering technical high-quality IGBT drive circuits, a team worked out the basic
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d-595812ed30c170v/15mama110+10ff600r17kf6b2topologies pulse transformer driver igbt applicationigbt with pulse transformer driverigbt driver circuit diagram cut off voltageedfa rise time specificationsfs450r12ke3ma110 eupeceupec igbtpwm igbt dc-dc converterbi-directional switch igbt driver
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eupec igbt
Abstract: MA110 2ED30C17 ECONOPACK IGBT EUPEC eupec igbt driver sixpack eupec igbt Eupec Power Semiconductors pwm igbt dc-dc converter FF600R17KF6B2
Contextual Info: eupec IGBT EiceDRIVER IGBT Driver for medium and high power IGBT Modules Michael Hornkamp eupec GmbH Max-Planck-Straße 5 D-59581 Warstein/ Germany www.eupec.com Abstract While considering technical high-quality IGBT drive circuits, a team worked out the basic
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d-595812ed30c170v/15mama110+8ff600r17kf6b2eupec igbteconopackigbt eupeceupec igbt driversixpack eupec igbteupec power semiconductorspwm igbt dc-dc converter
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Epcos
Abstract: IGBT cross reference IGBT cross reference semikron box capacitor marking code IGBT cross reference semikron eupec IGBT cross capacitor cross reference semikron IGBT snubber IGBT Guide B32656S7474K565
Contextual Info: Cross Reference for IGBT Snubber Capacitors Module / Capacitors Film Capacitor Division FK PM, January 2005 IGBT Module / Capacitor Cross USER GUIDE 1 : Choose a modul 1 Modul / Terminal list Fuji Eupec eg.: FS225R12KE Semikron 2 : Take a terminal no. 3 : Choose a C-value
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fs225r12ke18x39b32656s7474k565kmk0789-h+10kmk0792-2epcosigbt cross referenceigbt cross reference semikronbox capacitor marking codeigbt cross reference semikron eupecigbt crosscapacitor cross referencesemikron igbt snubberigbt guide
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6-pulse power module
Abstract: 170H0235 3KM17 Gleichrichter mikroschalter DIN57558 FUSE 170M B6C 500/670 1260F K0.17F-6T878N-LRCT 170M "bridge rectifier" active switch control circuit
Contextual Info: Technical information Module Stacks Introduction: eupec offers module stacks for all well-known kinds of circuits for the lower and medium power range. For the reason of the insulated construction of the modules, the heatsinks do not conduct any voltage and can be earthed in the unit
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6-pulse power module170h02353km17gleichrichter+6mikroschalterdin57558fuse 170mb6c 500/670 1260f k0.17f-6t878n-lrct170mbridge rectifier" active switch control circuit
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CT-Concept
Abstract: CT-Concept Technology FD200R65KF1-K FZ200R65KF1 ISO3116 65039-032 77315-101-05 1SD210FI-FX200R65KF1 eupec igbt igbt types
Contextual Info: 1 SD 210 FI Data Sheet SCALE High Voltage IGBT Driver 1SD210FI-FX200R65KF1 Plug-and-play, compact, high performance, single channel driver for two-level converters Abstract The SCALE HVI 1SD210FI-FX200R65KF1 is a compact single-channel intelligent gate driver designed for EUPEC’s high-voltage IGBTs type
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1sd210fi-fx200r65kf1fd200r65kf1-kfz200r65kf11sd210fi-+9fx200r65kf1ch-2504ct-conceptct-concept technologyiso311665039-03277315-101-05eupec igbtigbt types
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bi-directional switches IGBT
Abstract: siemens igbt eupec matrix EconoMAC econoMac IGBT IGBT based voltage source converter "bi-directional switches" IGBT siemens rectifier pwm igbt matrix converter siemens igbt inverters bidirectional switch
Contextual Info: EconoMAC the first all-in-one IGBT module for matrix converters Eupec: Hr. M. Hornkamp; Hr. M. Loddenkötter; Hr. M. Münzer; Siemens A&D: Hr. O. Simon ; Hr. M. Bruckmann Abstract: Searching for new alternatives to the state of the art technology of voltage
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ch2721-9/89/0000-0360bi-directional switches igbtsiemens igbt eupec matrixeconomac+7economac igbtigbt based voltage source converterbi-directional switches" igbtsiemens rectifier pwm igbtmatrix convertersiemens igbt invertersbidirectional switch
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heatsink catalogue
Abstract: FS450R12KE3 3rd Generation of 1200V IGBT Modules FS300R12KE3 Econo PIM The internal structure module IGBT FS300R12KE3 FS150R12KE3G half bridge converter 2kw High Voltage Busbar inverter techniques
Contextual Info: EconoPACK+ A new IGBT module for optimized inverter solutions M. Münzer, M.Hornkamp eupec GmbH & Co.KG, Warstein 08.2000 So called EconoPACK and EconoPIM modules with solderable pin terminals have changed the structure of inverters in application up to 20kW. Above 100 kW IHM modules have set a new
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heatsink cataloguefs450r12ke33rd generation of 1200v igbt modulesfs300r12ke3+6econo pimthe internal structure module igbt fs300r12ke3fs150r12ke3ghalf bridge converter 2kwhigh voltage busbarinverter techniques
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FZ600R65KF1
Abstract: CT-Concept Technology 1SD210FI-FZ600R65KF1 65039-032 HFBR-2522 power supply for igbt driver ISO3116I HFBR-1522 "IGBT Drivers" iso31
Contextual Info: 1 SD 210 FI Data Sheet SCALE High Voltage IGBT Driver 1SD210FI-FZ600R65KF1 Plug-and-play, compact, high performance, single channel driver for two-level converters Abstract The SCALE HVI 1SD210FI-FZ600R65KF1 is a compact single-channel intelligent gate driver designed for EUPEC’s high-voltage IGBTs type
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1sd210fi-fz600r65kf1fz600r65kf11sd210fi-ch-2504+8ct-concept technology65039-032hfbr-2522power supply for igbt driveriso3116ihfbr-1522igbt driversiso31
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EUPEC Thyristor
Abstract: T588N16TOF tt92n16kof TT162N16KOF TZ500N16KOF TT106N16KOF TT500N16KOF eupec scr thyristor scr scr 106
Contextual Info: BACK NEXT HIGH POWER THYRISTORS AND DIODES Diode Thyristor 2 Features: 2 5 Features: 4 • Reverse Voltage up to 2800 Volts • Metal Ceramic Package • Reverse Voltage up to 4900 Volts • Metal Ceramic Package 1 Applications: • DC Motor Control for machine tools
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641-t218n16tof641-t358n16tof641-t588n16tof641-t879n16tof+16641-t1189n18tof641-d428n18tof641-d798n16tof641-tt92n16kof641-tt106n16kof641-tt162n16kofeupec thyristort588n16toftt92n16koftt162n16koftz500n16koftt106n16koftt500n16kofeupec scrthyristor scrscr 106
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automotive power inverter bus bar
Abstract: improved IGBT structure allows PC board mounted m
Contextual Info: r ik* B 'g jttn n n H B w / Wf WMWiWHWtfy f T^nmawiwhicm .'. POW EnCONVERSION & INTELLIGENT M O TIO N • M ic a C a p a c it o r s ■ M O S F E T ESD ■ A ir C y lin d e r ■ DSP in V a r i a b l e S p e e d D r iv e s ■ N P T IG B T M o u n t s o n P.C. B o a r d
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b6-4190automotive power inverter bus barimproved igbt structure allows pc board mounted m |
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EUPEC DD 105 N 16 L
Abstract: all type of thyristor EUPEC tt 162 n 16 EUPEC Thyristor thyristor tt 162 n EUPEC Thyristor TT thyristor tt 162 n 12 tt 162 n 16 module bsm 25 gp 120 Eupec bsm 25 gb 120
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 96 Type designations Presspacks IGBT Modules T 930 S 18 T M C T D A 930 1 4 6 7 8 9 3 thyristor diode asymmetric thyristor average on state current A standard ceramic disc high power ceramic disc
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eupec dd 105 n 16 lall type of thyristoreupec tt 162 n 16eupec thyristor+6thyristor tt 162 neupec thyristor ttthyristor tt 162 n 12tt 162 n 16module bsm 25 gp 120eupec bsm 25 gb 120
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7471
Abstract: IEC749
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 98 N ND 98 N screwing depth max. 9,0 for fillister head screw M5x11 Z4-1 III II I 10 15,5 1 AK 2 20 3 A K 3 DD. 20 80 92 2 3 K A ND. VWK February 1996 DD 98 N Elektrische Eigenschaften
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EUPEC powerblock "DD 151 N 12"
Abstract: EUPEC DD 151 N 14 k dd 55 n 14 powerblock EUPEC powerblock N1
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 151 N screwing depth max. 12 for fillister head screw M6x15 Z4-1 14 15 25 25 80 94 AK K A March 1998 DD 151 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte
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m6x15800iderstandesdd151n7eupec powerblock "dd 151 n 12+3eupec dd 151 n 14 kdd 55 n 14 powerblockeupec powerblock n1
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EUPEC DD 600 N K
Abstract: v0215
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 600 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 600 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische Spitzensperrspannung
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EUPEC DD 31 N 1200 k
Abstract: DD 31 N 800 K IEC749
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 540 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 540 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values
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surg40dd540n7eupec dd 31 n 1200 kdd 31 n 800 k+1iec749
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IGBT EUPEC FZ 1800 R
Abstract: IGBT FZ 1000 KF423 IGBT FZ 1800 fz 79 1500 eupec FZ 1800 G1 TRANSISTOR FZ 101
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E
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igbt eupec fz 1800 rigbt fz 1000kf423igbt fz 1800+4fz 79 1500eupec fz 1800g1 transistorfz 101
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fz 79 1500
Abstract: KF423
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E
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EUPEC dd 106 N 12
Abstract: JE 33
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 106 N for fillister head screw screwing depth max. 8,5 M5x11 Z4-1 12 15 20 20 80 92 AK K A March 1998 DD 106 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte
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EUPEC DD 90 N 16 K
Abstract: EUPEC DD 31 N 1200 k EUPEC DD104N08 EUPEC powerblock JE 33 EUPEC DD 600 N K DD104N2 eupec powerblock ND
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 104 N ND 104 N screwing depth for fillister head screw max. 9,0 M5x11 Z4-1 10 15,5 20 20 14,5 80 92 1 AK 2 3 A K 3 DD. 2 3 K A ND. VWK February 1996 DD 104 N Elektrische Eigenschaften
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m5x11dd104n9eupec dd 90 n 16 keupec dd 31 n 1200 k+6eupec dd104n08eupec powerblockje 33eupec dd 600 n kdd104n2eupec powerblock nd
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EUPEC DD 89
Abstract: JE 33 EUPEC DD 600 N K EUPEC powerblock N1
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 89 N screwing depth for fillister head screw max. 9,0 M5x11 Z4-1 10 15,5 20 20 14,5 80 92 AK K A March 1998 DD 89 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte
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EUPEC DD 600
Abstract: eupec dd 90 n 12 L
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 101 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 101 F, TD 101 F, DT 101 F
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EUPEC TT 106 N 12
Abstract: eupec dd 115 EUPEC tt 95 n 14 EUPEC dd 106 N 12 eupec dd 76 n 12 l D-59581 uas 111
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 111 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 111 F, TD 111 F, DT 111 F
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m6x15eupec tt 106 n 12eupec dd 115eupec tt 95 n 14+4eupec dd 106 n 12eupec dd 76 n 12 ld-59581uas 111
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diode F4
Abstract: IGBT f4 eupec igbt F4-400R12KS4 diode F4 11
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules F4-400R12KS4 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V IC,nom.
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f4-400r12ks4diode f4igbt f4eupec igbt+1diode f4 11
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eupec igbt
Abstract: IGBT f4 F4-400R12KS4
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules F4-400R12KS4 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V IC,nom.
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