EUPEC OUTLINE M5 Search Results

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

T235N

Abstract: T308N
Contextual Info: EUPEC 52E T> 34035^7 T 308 N 0D00743 SSI MUPEC - P Z Ö - / ? iypenreihe/iype ränge T 308 N Elektrisch« Eigenschaften Electrical properties Höchstzulässiqe Werte Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom

DIODE S2E

Abstract: s2e transistor
Contextual Info: 7 ^ 3 < ? - 3 / F F 100 R 10 K 52E EUPEC Transistor Transistor ]> • aM D SST? Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 100 A 751 MUPEC Thermal properties DC, pro Baustein / per module

Contextual Info: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

Contextual Info: 7 ^3 4 -3 / FF 300 R 06 KF E U P EC 52E Transistor "Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values • BMOBET? 0000240 T78 ■UPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module

Contextual Info: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

Eupec bsm 25 gb 120

Contextual Info: eu p ec Technische Information / Technical Information BSM 50 GB 60 DLC «£££. vorläufige Daten preliminary data Höchstzulässige Werte Elektrische Eigenschaften / Maximum rated values / Electrical properties K o lle k to r-E m itte r-S p e rrs p a n n u n g

transistor 1BW 57

Abstract: IGBT EUPEC
Contextual Info: FF 200 R 06 KF EUPEC S2E ]> G G 00232 TTl •UPEC Thermische Eigenschaften Thermal properties 0,08 °C/W Rthjc DC, pro Baustein / per module 0,16 °C/W DC, pro Zweig / per arm 0,03 °C/W RthCK pro Baustein/per module 0,06 °C/W Transistor Transistor Elektrische Eigenschaften

J975

Abstract: 1BW TRANSISTOR 733transistor
Contextual Info: EUPEC S2E • 34032^7 000020b flOT » U P E C FF 75 R 10 K 7 =3 « / Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 75 A lc Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

Contextual Info: 7=3 4’ 3 FF 75 R 06 KF EUPEC S5E 34035^7 Rth jc Elektrische Eigenschaften 00Q 02G 5 Thermische Eigenschaften Transistor Transistor D Electrical properties RthCK 1 b 1! / MUREC Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Pro Baustein /p e r module

din 7985

Abstract: din 6900 push switch 6mm c-series IGBT instructions din 46244 A 100N DIN46244 IGBT AS switch SCREW din 7985 AN2002
Contextual Info: APPLICATION NOTE Date:2002-07-09 Page 1 of 6 AN-Number: AN2002-08 Mounting instructions 62mm C-series IGBT - modules half-bridges and single switches 1. Heat sink The mounting surface must be clan and free of particles. Flatness ≤ 25µm on a length of 100 mm

vqe 24 d

Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
Contextual Info: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

DIODE BZ

Abstract: EUPEC tt 95 n t93 eupec transistor r06 BU 500 DT
Contextual Info: ’7 3 3 ^ " 3 / F 6 -1 5 R 06 KF SSE EUPEC Transistor D Transistor 34032^7 Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 600 V 15 A le ÜÜ Ü G2b T 'H S BIUPEC Thermal properties

8 A 123

Abstract: DIODE BZ F6-8R10K
Contextual Info: 7 = 3 9 -3 / F6-8R10K EUPEC SEE Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces •c D • 3M032T7 GDDDEb? 110 H U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p er module

Contextual Info: 0 U p 0 T e c h n i s c h e In f o r m a t io n / T e c h n ic a l In f o r m a t io n £ £ £ £ . C B S M 1 0 0 G D 1 2 0 D L C vorläufige Daten preliminary data H öchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties

Eupec BSM

Contextual Info: Technische Information/Technical Information IGBT-Module IGBT-Modules BSM 30 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values K o lle k to r-E m itte r-S p e rrs p a n n u n g c o lle c to r-e m itte r v o lta g e

Eupec BSM

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 30 GD 60 DLC E3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values K o lle k to r-E m itte r-S p e rrs p a n n u n g c o lle c to r-e m itte r v o lta g e

TT 46 N 12

Abstract: tt 25 n powerblock EUPEC TT 105 N 12 TT56N EUPEC tt 18 n 14 TT46N EUPEC DD 105 N 16 L tt 36 n powerblock TT93N EUPEC tt 162 n 16
Contextual Info: European PowerSemiconductor and Electronic Company Marketing Information DD 31 N screwing depth max. 8,5 fillister head screw M5 x 11 Z4 - 1 marking 68 15,5 20 20 80 92 AK K A VWK February 1996 DD 31 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES