EUDYNA GAAS FET AMPLIFIER Search Results

FLL410IK-4C

Abstract: ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers
Contextual Info: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is

L-Band

Abstract: FLL410IK-3C
Contextual Info: FLL410IK-3C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is

L-Band

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

Eudyna Devices

Abstract: eudyna fet FLL810IQ-3C
Contextual Info: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.

L-Band

Abstract: 842 FET
Contextual Info: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which

Eudyna Devices power amplifiers

Abstract: eudyna GaAs FET Amplifier FLL1200IU-2 Eudyna high power
Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that

Contextual Info: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium

FLL1500IU-2C

Abstract: imt 901 FLL1500
Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that

L-Band

Abstract: FLL410IK-4C
Contextual Info: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is

FLL21E004ME

Contextual Info: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION

FLL21E010MK

Abstract: R104-5
Contextual Info: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION

601 121

Abstract: FLL800IQ-2C
Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that

FLL1500IU-2C

Abstract: eudyna GaAs FET Amplifier
Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that

FLL810IQ-3C

Contextual Info: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.

eudyna GaAs FET Amplifier

Abstract: FLL2400IU-2C Eudyna Devices
Contextual Info: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that

Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,

ED-4701

Abstract: FLL21E135IX
Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,

FLL1200IU-2

Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that

Eudyna Devices power amplifiers

Abstract: FLL600IQ-2 eudyna GaAs FET Amplifier
Contextual Info: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which

magS12

Abstract: fll21 4-10-107 FLL21E004ME L-Band
Contextual Info: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION

FLL21E090IK

Contextual Info: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,

7824 TO-3 package

Abstract: high power FET transistor s-parameters FLL21E040IK MA 7824. to-3 Eudyna Devices power amplifiers
Contextual Info: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency,

FSX027WF

Abstract: fsx027w
Contextual Info: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium

FLL21E060IY

Abstract: FLL21E06 diode gp 421 ED-4701 ED 17642
Contextual Info: FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E060IY is a high power GaAs FET that offers high efficiency,