ESN 234 Search Results

XO-53B

Contextual Info: ALPHABETICAL CONTENTS TYPE PRODUCT 3 0 0 SERIES . APD-016M040 . .Plasm a Display Modules . APD -32A026. .Plasm a Display M odules. APD-192O088 . Plasm a Display Modules . APD-192G068-1 .Plasm a Display Modules . APD-240M028 . .Plasm a Display Modules .

Contextual Info: Am29DS323D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. Please contact a Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications

Contextual Info: Am29LV320D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Security on Silicon (SecSi Sector) — Current version of device has 64 Kbytes; future versions will have 256 bytes (e.g. MirrorBit)

Contextual Info: Am29DS323D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV DUH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG )XMLWVX

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Contextual Info: Am29DS323D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

TS044

Abstract: AMD AM29F010B PACKAGE SA20-SA23 SA14-SA11 SA26-SA23 AM29F010 AM29F032
Contextual Info: Table of Contents Product Selector Guide Am30LV0064D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Am29LV010B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Am29F160D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: PRELIMINARY Am29DS323D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

AM29DS320GB70

Abstract: AM29DS320GT70 562 H 2500 V
Contextual Info: Am29DS320G Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: ADVANCE INFORMATION Am29DS320G 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

Contextual Info: n I 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. DIST FT BY TYCO ELECTRONICS CORPORATION. REVISIONS LTR B DATE DWN APVD 7 /2 7 /0 4 SS CR DESCRIPTION REVISED PER 0 G 3 B - 0 6 2 8 - 0 4 - 1, Application and Features!

Contextual Info: Data Sheet AS3932 3 D L o w F r e q u e n c y Wa k e u p R e c e i v e r 1 General Description The AS3932 is a 3-channel low power ASK receiver that is able to generate a wakeup upon detection of a data signal which uses a LF carrier frequency between 110 - 150 kHz. The integrated correlator

AMD 29LV800

Contextual Info: PRELIMINARY Am29DS323D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

s323dt

Contextual Info: PRELIMINARY Am29DS323D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

hy 1418

Abstract: AS3932 AS3932-BQFT AS3932-BTST J-STD-033A 4X4 HEX KEY PAD
Contextual Info: Data Sheet AS3932 3 D L o w F r e q u e n c y Wa k e u p R e c e i v e r 1 General Description The AS3932 is a 3-channel low power ASK receiver that is able to generate a wakeup upon detection of a data signal which uses a LF carrier frequency between 110 - 150 kHz. The integrated correlator

Contextual Info: Datasheet AS3932 3 D L o w F r e q u e n c y Wa k e u p R e c e i v e r 1 General Description The AS3932 is a 3-channel low power ASK receiver that is able to generate a wakeup upon detection of a data signal which uses a LF carrier frequency between 110 - 150 kHz. The integrated correlator

amd part marking

Abstract: S29JL064H S29PL064J
Contextual Info: Am29DL640D Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640D and is the

AS3932

Abstract: AS3932-BQFT AS3932-BTST J-STD-033A RFID preamble source code
Contextual Info: Datasheet AS3932 3 D L o w F r e q u e n c y Wa k e u p R e c e i v e r 1 General Description The AS3932 is a 3-channel low power ASK receiver that is able to generate a wakeup upon detection of a data signal which uses a LF carrier frequency between 110 - 150 kHz. The integrated correlator

Contextual Info: PRELIMINARY Am29DS323D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

Contextual Info: Am29DL640D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

Contextual Info: PRELIMINARY Am29PDL640G 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 64 Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4

S29DS032J

Abstract: SSTL-18 11x9mm
Contextual Info: S29DS032J 32 Megabit, 3.0 Volt-only DDR Burst Mode Flash Memory featuring 110 nm Floating Gate Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development

pdl128g70

Abstract: 11C00 00111100XX
Contextual Info: ADVANCE INFORMATION Am29PDL128G 128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 128Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4

pdl128g70

Abstract: SA90 1D400
Contextual Info: ADVANCE INFORMATION Am29PDL128G 128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 128Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4