ESMT M12L16161A Search Results

M12L16161

Abstract: m12l16161a-7t
Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision V1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision V1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision V1.2 (Apr. 25 2000)

Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision V1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision V1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision V1.2 (Apr. 25 2000)

M12L16161A-7TG

Abstract: M12L16161A M12L16161A-5TG
Contextual Info: ESMT M12L16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3

M12L16161A-7TG

Abstract: M12L16161A M12L16161A-5TG M12L16161
Contextual Info: ESMT M12L16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3

SDRAM

Contextual Info: ESMT M12L16161A 2Q Automotive Grade SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs

Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension

SDRAM

Abstract: M12L16161A-7TG2Q
Contextual Info: ESMT M12L16161A 2Q SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )

esmt m12l16161a

Abstract: M12L16161A M12L16161A-7TG 200MHZ M12L16161A-5TG
Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension

Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension

Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension

M12L16161A

Abstract: esmt m12l16161a M12L16161A-7TIG
Contextual Info: ESMT M12L16161A Operation temperature condition -40℃~85℃ SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs

SDRAM

Abstract: M12L16161A-7TIG2Q M12L16161A-7TIG
Contextual Info: ESMT M12L16161A 2Q Operation Temperature Condition -40°C~85°C SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs

0.65mm pitch BGA

Abstract: M52S16161A M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A
Contextual Info: ESMT M52S16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3

M13S2561616A-5TG

Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Contextual Info: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now

Contextual Info: M12L16161A 2Q SDRAM 512K x 16Bit x 2Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESM T M12L16161A 2Q Automotive Grade SDRAM 512K x 16Bit x 2Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )

Contextual Info: ESM T M12L16161A 2Q Operation Temperature Condition -40 C~85 C SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs