ESM DIODE Search Results

esm diodes

Abstract: ESM 470 esm 30 450 v ESM 650 esm 112-39 esm 200 cb33 p 112220 112180 esm 112 390
Contextual Info: clamping zener diodes diodes zener ecreteuses THOMSON-CSF V BR * 'RM @ V rivi Unidirectional types 1mA) 4 KW ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM 111-15 111-18 111-22 111-27 111-33 111-39 111-47 111-56 111-68 111-82

byx 61 400

Abstract: byx 33 400 BYX61-50 Thomson-CSF rectifier GR606 diodes byt
Contextual Info: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A Types 6 A / Tcase = 85°C ESM ESM ESM ESM ESM 255-50 R 255-100 R 255-200 R 255-300 R 255-400 R 10 20 40 60 80 zzzzz 765-10 765-20 765-40 765-60 765-80 R (R) (R) (R) (R) 1N 3889, (R)

diode ESM 15

Abstract: diode ESM 245-1000 diode ESM 244-600 ESM 244-600 diode 606 esm diodes ESM diode Diodes de redressement DIODE REDRESSEMENT esm 200
Contextual Info: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A Types •o Vr r m ■ fsm 10 ms A (V) (A) 60 A / T ç g j g = 90 °C ESM ESM ESM ESM ESM 243- 50, 243-100, 243-200, 243-300, 243-400, (R) (R) (R) (R) (R) j = 165°C 1■ 60 A / Tçase = 90 °C

byx 200

Abstract: esm diodes byx 65 400 243300 243_400 243400 BYX/400 65400 ESM 244-600 244-600
Contextual Info: rZ7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES FAST RECOVERY RECTIFIER DIODES < 100 A Continued Type •o VRRM •fsm 1 vF iF 10 ms max ESM 765PI-600 ESM 765PI-800 BYX61- 50, BYX 61-100, BYX 61-200, BYX 61-300, BYX 61-400, (R) (R) (R) (R)

esm diodes

Abstract: esm 200 esm 30 450 v esm 112 390 ESM 650 impulsion P005 esm 112-270 SUPPRESSOR cb T0126
Contextual Info: Type V B R T (V) VRm ax (V) / IR T (m A) min V (BR)SM (V) / x D R T 76 'rsm1 (A) Page 369 T (v j | 2 5 ° C T(vj) 25 OC ESM 112-100 80 90 100 165 23 * £ S M 112-120 95 105 100 200 19 369 ESM 112-150 115 130 100 250 15 369 ESM 112-180 145 160 60 300 13 369

Contextual Info: s G S —THOMSON S IC I D • 7 C12,:1237 0 0 0 2 3 2 3 ' 7 59C 02 323 O D T-03 -A.I ESM 245-50, R ESM 245-1000, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE

KDS121E

Abstract: transistor ESM 30
Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC

marking H1

Abstract: BAW56T
Contextual Info: SEMICONDUCTOR BAW56T TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Maximum (Peak) Reverse Voltage Reverse Voltage VR 80 V Continuous Forward Current

Marking H2

Abstract: marking .H2 transistor ESM 30 BAV70T
Contextual Info: SEMICONDUCTOR BAV70T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G H : CT=0.9pF (Typ.). 3 1 SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current

transistor ESM 30

Abstract: kds221e
Contextual Info: SEMICONDUCTOR KDS221E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. B Low Forward Voltage : VF=1.0V Max. . D G H A 2 C 3 1 DIM A B MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +

ESM diode

Abstract: KDS121E
Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). D H : CT=0.9pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES

esm power diodes

Abstract: KDS120E
Contextual Info: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D H : CT=2.2pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES

ESM6045DV

Contextual Info: SGS-THOMSON llO O M iL iC T IM iK S ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

0N06L

Abstract: RFP30N06
Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil

ESM3030DV

Contextual Info: r Z 7 S G S -T H O M S O N ^ 7# M D œ m iC T IfM D Ig ESM 3030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS

0n06

Abstract: mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE
Contextual Info: [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic

IEC601-1

Abstract: transistor ESM 30 EN60601-1 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5 EN61000-4-6
Contextual Info: ESM Series, AC-DC Medical Power Supply Data Sheet Features • EN60601-1, UL2601-1, IEC601-1 approved • 12mm creepage • Low leakage current <300 A • Stackable for up to 2000W output power • 1 to 12 isolated outputs with full user configurability

relay 12 volt

Abstract: diode SM 88A 12 VOLT 2 AMP regulator diode ESM 15 MODEL SA 12 volt 10 amp relay 12 volt relay 100 volt 60 amp to 220
Contextual Info: features Four useful power rails in one package Rugged construction Universal mains input Overvoltage Protection on all 5 volt rails “ Off the shelf” availability description The "ESM" Series of System Power Units have been developed to meet the general requirements of hybrid analogue/digital systems

Contextual Info: nZ Z S G S ‘ T H O M S O N " * 7 i, 5M0 g[MIILICT«fl[](S ESM 765PI-600/800 FAST RECOVERY RECTIFIER DIODES • HIGH VOLTAGE CAPABILITY ■ FAST AND SOFT RECOVERY ■ THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND Irm AT 100 °C UNDER USERS CONDITIONS

Contextual Info: Æwtron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD.• RIVIERA BEACH, FLORIDA 33404 TEL: 407; 840-4311 • TLX: 51-3435 • FAX: (407 863-5946 N-CHANNEL ENHANCEMENT MÜS FET 200V, 50A, 0.051 ABSOLUTE MAXIMUM RATINGS PARAMETER (R esM .O M n) UNITS SYMBOL Drain-source Vo It.(1)

BUS11A PHILIPS SEMICONDUCTOR

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV

ESM379

Abstract: esm diodes
Contextual Info: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal

diode esm

Contextual Info: S ic S G S—THOMSON « i D 1• T H O M S O N -C S F ? ci a ci 5 3 ? E S M MWieiAkl CCàil/*/MirM i m i mo DISCRETS DIVISION SEMICONDUCTEURS 000231b 2 4 4 -5 0 , R " " * ESM 244-600, (R) SU PER SW ITC H f a s t r e c o v e r y r e c t i f i e r d io d e s

esm diodes

Abstract: esm 30 450 v ESM 200 ESM 650 diode ESM 15 esm 112 390 ESM111-150 S-005 SUPPRESSOR cb esm 112 33
Contextual Info: Silicon transient voltage suppressor diodes Diodes de p ro te c tio n au s ilic iu m DO 4 Type ^R m ax V DO ^ V (B R ÎT (V) p 2 4 kW / |rt (mA) min Rectangular puise, t p 10 /¿s, T (vj) 2 5 °C Impulsion rectangulaire, tp 10 ys. T(vp 25 °C V (B R )S M