ESH B 001 12 Search Results

IC Pin 7476

Abstract: XDM32
Contextual Info: PRELIMINARY MICRON MT8LD264 X 2 M EG x 64 DRAM M ODULE 1 DRAM MODULE 2 MEG x 64 16 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JE D E C - and industry-standard pinout in a 168-pin, dual-in-line m em ory m odule (D IM M )

upd72120

Abstract: up down counter using IC 7476 PD72120 UPD72120R hj 4094 MPD72120 B7094 b7050
Contextual Info: NEC NEC Electronics Inc. Description The jiPD72120 Advanced Graphics Display Controller AG DC displays characters and graphics on a raster scan device from commands and parameters received from a host processor or CPU. Features of the AG DC include high-speed graphics drawing capabilities, video

Contextual Info: PRELIMINARY MT4C16256/7/8/9 S 256K X 16 WIDE DRAM I^ IIC Z R O N WIDE DRAM 256K x 16 DRAM FEATURES • SE L F REFRESH , or "S lee p M o d e " • In d ustry -stan dard x l6 pin ou ts, tim ing, functions an d p a ck a g e s • H igh -perform an ce C M O S silicon-gate process

Contextual Info: 16 15 14 13 12 11 10 8 SYMBOL DEFINITION THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER M MISSING NUMBERS TOTAL NO, OF SYMBOLS ON DRAWING 9 LAST NO. USED 9 DWG STATUS DATE STG REV N/P CHG 21DE99 R 001

Contextual Info: • R ADVANCED W .\A p o w e r Te c h n o lo g y " APT5017SVR 500v 30a 0.170q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: DENSE-PAC 16 Megabit CMOS DRAM D P D 1M X 16 M 2 H 3 M ICROSYSTEM S PRELIMINARY D E S C R IP T IO N : The D PD 1M X1 6M 2H3 "S T A C K ” module is a re vo lu tio n ary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCO stacked and leaded for surface

t41l

Abstract: LC256 41LC256K32D4
Contextual Info: ADVANCE MT41 LC256K32D4 S 256K x 32 SGRAM p iC Z R O iS J 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM PULSED RAS, DUAL BANK, PIPELINED, 3.3V OPERATION FEATURES • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; colum n address can be

3055t

Abstract: diode zd 22
Contextual Info: APT20M45SVFR • R ADVANCED W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

A4151

Abstract: A7151 "Frequency To Voltage" 4151 ua7151 voltage to frequency converter "frequency to Voltage Converter" UA4151TC vfc 4151 MA7151 Frequency-To-Voltage Conversion
Contextual Info: /¿ A 4 1 5 1 • /¿ A 7 1 5 1 VOLTAGE-TO-FREQUENCY CONVERTER FAIRCHILD LINEAR INTEGRATED CIRCUITS DESCRIPTION - The /¿A4151 is a monolithic building block used to convert dc voltage to digital pulses. The frequency of the output pulses is proportional to the dc input voltage.

KA5Q0765RT

Abstract: ka5q0765 resh KA5Q0765* an
Contextual Info: KA5Q0765RT S P S S P S TO -22 0F -5L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under

Contextual Info: PRELIMINARY MICZRON I 16 MEG X 4 FPM DRAM H R AM LSHMIVI MT4LC16M4A7 MT4LC16M4T8 FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 13 row, 11 column addresses (A7) 12 row, 12 column addresses (T8)

Contextual Info: ADVANCE M • ir S D N MT4 LD T 164 B(N ), MT8LD264 B(N ), MT16LD464 B(N ) 1 ,2 ,4 M EG X 64 B U R S T EDO DRAM M O D U LES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (D IM M )

mm74c2

Contextual Info: Revised January 1999 SEMICONDUCTOR TM MM74C221 Dual Monostable Multivibrator General Description Pulse stability w ill be lim ited by the accuracy o f external tim ing com ponents. The pulse w idth is approxim ately The MM74C221 dual m onostable m ultivibrator is a m ono­

Contextual Info: 5 LF2242 12/16-bit Half-Band Interpolating/ Decimating Digital Filter devices incorporated DESCRIPTION FEATURES □ 40 M H z Clock Rate □ Passband 0 to 0.22:fs Ripple: ±0.02 dB □ Stopband (0.28/s to 0.5/s) Rejection: 59.4 dB □ User-Selectable 2:1 Decim ation or

Fluke 75 Multimeter

Abstract: FLUKE 75 "Fluke 75" Multimeter ECJ-1VC1H680J FLUKE 1520 bq25010 bq25011 bq25012 ECJ2FB0J106M ic j901
Contextual Info: bq25010/11/12/15/17 bqHYBRID EVM for Single-Chip Charger and DC-DC Converter for Bluetooth Headsets and Other Portable Applications User's Guide June 2007 SLUU214A bq25010/11/12/15/17 (bqHYBRID) EVM for Single-Chip Charger and DC-DC Converter for Bluetooth Headsets and Other Portable Applications

IHLP2020CZER3R3

Contextual Info: User's Guide SLUU476 – December 2010 bq24133EVM Stand-Alone Synchronous, Switch-Mode, Battery-Charge Controller With Integrated N-MOSFETs and Power Path Selector This user's guide describes the features and operation of the bq24133EVM Evaluation Module EVM . The

ATTL7542

Abstract: LB127
Contextual Info: Jl%ATs»T Preliminary Data Sheet ' Microelectronics ATTL7542 Tip Ring Access Switch Features • Small size/surface-mount packaging ■ Monolithic 1C reliability ■ Clean, bounce-free switching ■ Low, matched ON-resistance ■ Built-in current limiting, thermal shutdown, and

HPA172

Abstract: bq24153 bq2415x A004 sot23 MURATA LQM2HPN1R0MJ0 GRM155R61C103K 6060B HPA256 Fluke 6060B Synchronous Buck Charger
Contextual Info: User's Guide SLUU321B – June 2008 – Revised May 2010 bq2415x YFF EVM 1 2 3 4 Contents Introduction . 1 1.1 EVM Features . 1

IHLP2020CZER3R3

Abstract: bq24712 BQ24172RHL R29-R33 BQ24171RHL CSD25401 wsl2010r0100fea HPA706 IHLP2020CZER BSS13
Contextual Info: User's Guide SLUU462A – November 2010 – Revised February 2011 bq24171EVM JEITA Compliant and bq24172EVM Stand-Alone Synchronous, Switch-Mode, Battery-Charge With Integrated N-MOSFETs and Power Path Selector This user's guide describes the features and operation of the bq24171 and bq24172 Evaluation Module

Contextual Info: MITSUBISHI LSIs MH25609J-85,-10,-12,-15/ MH25609JA-85,-10,-12,-15 PAGE MODE 2 6 2 1 4 4 -WORD BY 9-BIT DYNAMIC RAM DESCRIPTION The MH25609J, JA is 262144 w ord x 9 b it dynam ic RAM PIN CONFIGURATION TOP VIEW and consists o f nine industry standard 256K x 1 dynamic

2N7002DICT

Abstract: BQ24640
Contextual Info: User's Guide SLUU410 – February 2010 bq24600/20/40 EVM HPA421 Multi Cell Synchronous Switch-Mode Charger 1 2 3 4 5 6 Contents Introduction . 2

Contextual Info: P r e l i m i n a r y A d v a n c e In f o r m a t i o n •,wynmix -a c ts ^ Actel’s Reprogrammable SPGAs Features • SRA M -based SPGA G e n e r a l D e s c r ip t i o n System Program m able G ate A rray • Efficient silicon target for reusable V H D L and V erilog

schematic diagram 180v dc motor speed controller

Contextual Info: Centrifugal Fans direct driven with scroll Issue 1.3 November 2012 2 The overall picture will decide Complete systems by Nicotra Gebhardt Depending on the model of the fan, the efficiency grade “N” set in accordance with the ErP Directive must be achieved from 2013 and

bq24355

Abstract: fluke 75 SCHEMATIC BQ24355DSG
Contextual Info: User's Guide SLUU365 – June 2009 bq2435x DSG EVM for Li-Ion Charger Front-End Protection IC This user's guide describes the features, setup, and operation of the bq2435xEVM evaluation module. Included are the bill of materials, board layout, and schematic.