ESD AAL Search Results

wacker P12

Abstract: Wacker din 6798 SEMITOP thermal grease p12 Semikron Semitop 3 wacker rubber Thermal grease wack
Contextual Info: SEMITOP Mounting instructions ESD protection IGBT and MOS circuits in SEMITOP® modules are sensitive to electrostatic charges. All SEMITOP® modules are ESD protected during transport, storage and mounting process with an ESD cover. During the handling and assembly of the modules use a conductive grounded wristlet and working

max3379

Abstract: AAKS SOT23-8 Nippon capacitors MAX3372E-MAX3379E
Contextual Info: 19-2328; Rev 1; 4/02 ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage

MAX3391EETD T

Abstract: MAX3375 MAX3393E MAX3372E MAX3373E MAX3379E MAX3390E SOT-23 AAKS MAX3377EETD MAX3393EETD
Contextual Info: 19-2328; Rev 4; 1/06 ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage

UCSP8

Contextual Info: MAX3372E–MAX3379E/ MAX3390E–MAX3393E ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP General Description The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage

MAX3372E

Abstract: MAX3373E MAX3379E MAX3390E MAX3393E
Contextual Info: 19-2328; Rev 4; 9/05 ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage

MAXIM AAKS SOT23-8

Abstract: aar sot23-8 TDFN-14
Contextual Info: MAX3372E–MAX3379E/ MAX3390E–MAX3393E ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP General Description The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage

marking aaks

Abstract: TDFN-14 MAX3392EEBC MAX3372E MAX3373E MAX3379E MAX3390E MAX3393E 2031* maxim marking AQG
Contextual Info: 19-2328; Rev 2; 11/07 ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage

TDFN-14

Abstract: ELS 300 E-T MAX3374E Voltage Level Translators MAX3372E MAX3373E MAX3379E MAX3390E MAX3393E
Contextual Info: 19-2328; Rev 1; 12/06 ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage

Contextual Info: MAX3372E–MAX3379E/ MAX3390E–MAX3393E ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP General Description The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage

MAX13202E

Abstract: MAX13204E MAX13204EALT MAX13206E MAX13206EALA L1022 8AAD 6-PIN PACKAGE MARKING 205 MAXIM
Contextual Info: 19-3855; Rev 1; 4/06 2-/4-/6-/8-Channel, ±30kV ESD Protectors in µDFN The MAX13202E/MAX13204E/MAX13206E/MAX13208E low-capacitance ±30kV ESD-protection diode arrays are designed to protect sensitive electronics attached to communication lines. Each channel consists of a pair

130nm CMOS

Abstract: 130nm tsmc cmos model 130-nm tsmc cmos TSMC IO
Contextual Info: Data sheet IO ESD protection Low capacitive IO protection for TSMC 130nm CMOS technology Sofics has verified its TakeCharge ESD protection clamps on TSMC 130nm CMOS technology. The devices are product proven in several hundreds mass produced 130nm products. The cells provide competitive advantage

130nm CMOS

Abstract: tsmc cmos model tsmc cmos silicon footprint ESD
Contextual Info: Data sheet IO ESD protection Low capacitive IO protection for TSMC 130nm CMOS technology Sofics has verified its TakeCharge ESD protection clamps on TSMC 130nm CMOS technology. The devices are product proven in several hundreds mass produced 130nm products. The cells provide competitive advantage

Contextual Info: 19-3855; Rev 0; 10/05 4-/6-/8-Channel, ±30kV ESD Protectors in µDFN The MAX13204E/MAX13206E/MAX13208E low-capacitance ±30kV ESD-protection diode arrays are designed to protect sensitive electronics attached to communication lines. Each channel consists of a pair of diodes that

KG3B-35-5

Abstract: WIMA MKP 10 MKT wima wacker general purpose silicone THERMISTOR KG3B Wacker Silicones P-12 igbt 6.5 kv snubber wima 2.2 uF MKP10 WIMA MKP 4 MKP10 0,1
Contextual Info: Mounting Instructions and Application Notes for IGBT modules V1.0 ESD handling instructions SEMiXTM IGBT modules are devices sensitive to electrostatic discharge on the gates. To avoid electrostatic discharge on the gate which could destroy the IGBT-MOS gate, the module is

Contextual Info: Application Note µPD98405 155M ATM Integrated SAR Controller TM NEASCOT-S20 Document No. S13369EJ1V1AN00 (1st edition) Date Published June 2002 NS CP(N) 1998 Printed in Japan [MEMO] 2 Application Note S13369EJ1V1AN NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

PTI 30 040 pa

Abstract: t04 68 3 pin diode sg ag20 LP1 K06 1LPN3 AC03 nec ae02 marking HT15 22 marking ag01 TWN AA 427
Contextual Info: User’s Manual µPD98412 NEASCOT-X15 Advanced ATM Switch LSI Document No. S14169EJ2V0UMJ1 (2nd edition) Date Published October 2000 N CP(K) Printed in Japan 1999 [MEMO] 2 User’s Manual S14169EJ2V0UM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

USB Transceivers

Abstract: 3mm ir receiver MAX3450E MAX3450EETE MAX3450EEUD MAX3451E MAX3451EETE MAX3451EEUD MAX3452E MIC2550A
Contextual Info: 19-2843; Rev 2; 10/08 ±15kV ESD-Protected USB Transceivers The MAX3450E/MAX3451E/MAX3452E USB-compliant transceivers interface low-voltage ASICs with USB devices. The devices fully comply with USB 1.1 and USB 2.0 when operating at full 12Mbps and low (1.5Mbps) speeds. The MAX3450E/MAX3451E/

PD8282

Abstract: UPD8282
Contextual Info: Preliminary User’s Manual µP82821 2-PORT 25M ATM PHY LSI Document No. U14840EE1V0UM00 Date Published Mai 2000 NEC Corporation 2000 µPD82821 Notes for CMOS Devices 1 Precaution against ESD for Semiconductors Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate

Contextual Info: r r u n m LTC1323 TECHNOLOGY Single 5V AppleTalk Transceiver K R T U IK S DCSCRIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk Port ■ Operates From a Single 5V Supply ■ ESD Protection to ±1OkV on Receiver Inputs and Driver Outputs ■ Low Power: Ice = 2.4mA Typ

Contextual Info: USER’S MANUAL PPD98402A LOCAL ATM SONET FRAMER 1996 1995 Document No. S10673EJ1V0UM00 Date Published January 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

74AHC541

Abstract: 74AHC541D 74AHC541PW 74AHCT541 74AHCT541D
Contextual Info: Philips Semiconductors Product specification Octal buffer/line driver; 3-state 74AHC541 ; 74AHCT541 FEATURES DESCRIPTION • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V The 74AHC/AHCT541 is a high-speed Si-gate CMOS

L2 SOT23

Abstract: MAXIM AAKS SOT23-8 MAX3379E l2 sot23-8 MAX3372E MAX3373E MAX3390E MAX3393E MAX3379EEUD aar tssop 8
Contextual Info: 19-2328; Rev 2; 10/02 ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP Features ♦ Guaranteed Data Rate Options 230kbps 8Mbps +1.2V ≤ VL ≤ VCC ≤ +5.5V 10Mbps (+1.2V ≤ VL ≤ VCC ≤ +3.3V) 16Mbps (+1.8V ≤ VL ≤ VCC ≤ +2.5V and +2.5V ≤

MAXIM AAKS SOT23-8

Abstract: SOT23-8 AAKS MAX3377E MAX3391E MAX3391EEUD L2 SOT23-8 MAX3392E aba sot MAX3378E aar sot23-8
Contextual Info: 19-2328; Rev 0; 1/02 ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP Features ♦ Guaranteed Data Rate Options 230kbps 8Mbps +1.2V ≤ VL ≤ VCC ≤ +5.5V 10Mbps (+1.2V ≤ VL ≤ VCC ≤ +3.3V) 16Mbps (+1.8V ≤ VL ≤ VCC ≤ +2.5V and +2.5V ≤

MAX3372E

Abstract: MAX3373E MAX3379E MAX3390E MAX3393E L2 SOT23 Nippon capacitors
Contextual Info: 19-2328; Rev 3; 9/03 ±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP Features ♦ Guaranteed Data Rate Options 230kbps 8Mbps +1.2V ≤ VL ≤ VCC ≤ +5.5V 10Mbps (+1.2V ≤ VL ≤ VCC ≤ +3.3V) 16Mbps (+1.8V ≤ VL ≤ VCC ≤ +2.5V and +2.5V ≤