ES 95 SB Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2YJ50 Silicon epitaxial planar type For rectification • Package  Forward current (Average) IF(AV) = 3.0 A rectification is possible.  Low forward voltage VF : 0.55 V (max.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3DD82 Silicon epitaxial planar type (cathode common) For switching power supply • Package  Forward current (Average) IF(AV) = 20 A rectification is possible

7555-T

Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct

Contextual Info: fax id: 2006 «f CYM1471 CYM1481 c y pr es s 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access tim e of 70 ns • Low active power are constructed from eight 1471 or sixteen (1481) 128K x 8

Contextual Info: TOSHIBA LOGIC/MEMORY TC74HC423P/F r - 5 M ^ TC74HC423P/F DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR The TC74HC423 i s a h ig h sp e ed CMOS MONOSTABLE MULTIVIBRATOR f a b r i c a t e d w ith s i l i c o n g a te C^MOS te c h n o lo g y . I t a c h ie v e s t h e h ig h sp e ed o p e r a t io n s i m i l a r t o e q u iv a le n t

Contextual Info: T O S H IB A THMY6416H1 EG-75f-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416H1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

STP2012

Abstract: SuperSPARC STP2016QFP
Contextual Info: STP2016 S un M ic r o e l e c t r o n ic s J u ly 1997 Clock-2 Generator DATA SHEET System Clock Generator D e s c r ip t io n The STP2016 Clock-2 Chip generates clock signals for components on the SBus and MBus. The MBus and SBus are used by SPARC processors, such as SuperSPARC™. The MBus is designed for multiprocessing MP , operating at

250DC15

Abstract: 203PJLA250 250FC15 250GC15 250JC15 250MA100 250MA80 TT 2200 300EXH21
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

300FXD13

Abstract: 203PJLA250 250DC15 250FC15 250GC15 250JC15 250MA100 250MA80 250MA160
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

se012

Abstract: CF455 ni 6008 rom 512x4 se022 LC587204A kd 503 transistor SE012 diagram SE603 lopg
Contextual Info: Ordering number : EN*6008 CM OS 1C LC587208A, 587206A, 587204A, 587202A ¡S A ftY O i 4-Bit Single-Chip Microcontroller LCD Driver ROM: 2,4,6, or 8 K x 16 bits, RAM: 512 x 4 bits Preliminary Overview The LC587202A through LC587208A are 4-bit CMOS microcontrollers that integrate RO M , R A M , and an

oma2541 servo

Abstract: 5962-9083802HXX SKB 7 / 12 D-12 OMA2541SDB OMA2541SKB OMA2541SKCB
Contextual Info: OMA2541SKB OMA2541SKCB OMA2541SDB DUAL HIGH POWER OPERATIONAL AMPLIFIER APPROVED TO DESC DRAWING 5962-90838 8-Pin TO-3 And 12-Pin DIP, Dual 5 Amp Operational Amplifier FEATURES • • • • • • Approved to DESC Drawing 5962-90838. Available In Isolated Standard TO-3, “Copper Slug” TO-3 And

TSS ISI

Contextual Info: Voltage Regulators AN8016NSH Single-channel 1.8-volt step-up DC-DC converter control IC • Overview 0.625±0.1 0.5 +0.1 0.625±0.10 4.3±0.30 0.15–0.05 Overall height 1.7 max. 0.5±0.2 ■ Features 6 di p Pl lan nclu ea e se pla m d m des ne ain ain foll

TMS44C256

Contextual Info: TMS44C256, TMS44C257 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES JUNE 1 9 8 6 - • 2 6 2 ,1 4 4 X 4 Organization • Single 5-V Supply 10% Tolerance (TO P V IEW ) L 1 ^ 2 0 3 V SS 19 ] D Q 4 DQ2C 2 18 ] D Q 3 w [ 3 d q i Performance Ranges: TM S 4 4 C 2 5 _-1 0

Contextual Info: MN101CA5 Series MN101CA5F MN101CFA5G Mask ROM FLASH ROM byte 96K 128K RAM (byte) 4K 10K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time LQFP112-P-2020 (ES (Engineering Sample) available) 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.24 µs (at 2.7 V to 5.5 V, 8.4 MHz)

Contextual Info: su GEC PLESSEY ADVANCE INFORMATION S C M 1 C O I N D U C T O R S VP520S PAL/NTSC TO CIF/QCIF CONVERTER Supersedes version in June 1995 Digital Video & DSP 1C Handbook, HB3923-2 FE A T U R E S D E S C R IP T IO N • Lower Power, pin compatible replacement for VP520

Contextual Info: fax id: ^ T C Y P P g g « f PREUMINARY 64K X 1 1 1 0 CY7C1344 36 Synchronous Flow-Through 3.3V Cache RAM Features Functional Description • S u p p o rts 117 -M H z m ic ro p ro c e s s o r c a ch e sy ste m s w ith zero w ait states T he C Y 7 C 1 344 is a 3 .3 V 64K by 36 synch ron ous cach e RAM

54L157

Abstract: 325J2 cotco 93L09
Contextual Info: MIL-M-38510/46B 21 Marci; QUALIFICATION REQUIREMENTS REMOVED MIL-M-38510/46A 24 M a y 1 9 8 2 MILITARY DATA M I C R O C I R C U I T S , DIGITAL, T T L , LOW POWER, SELECTORS/MULTIPLEXERS, MONOLITHIC SILICON INACTIVE FOR NEW DESIGN T h i s s p e c i f i c a t i o n is

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

7860CSG

Abstract: romance de amor 7910CM happy birthday 7920Q 7860CSF 7930C music box dancer 7910CH 7860Csc
Contextual Info: S-M 0 S SYSTEMS INC IDE D | 7 E132e1[H DDOObTT T | -7= 11-/3 _ 0 M ELODY 1C TABLE* Powered by ICminer.com Electronic-Library Service CopyRight 2003 S-M 0 S SYSTEMS INC IDE D | 7^32^0^ DOODbSO 5 | - it T-77-13 M ask option G-2 Powered by ICminer.com Electronic-Library Service CopyRight

Contextual Info: Preliminary bq2060 U N IT 1 3 0 0 E SBS v1.1-Compliant Gas Gauge IC Features General Description >- Provides a ccu rate m e a su re m en t of availab le charge in NiCd, NiM H, Li-Ion, a n d L ead Acid b a tte rie s T h e b q 2 0 6 0 S B S -C o m p lia n t G as

Contextual Info: STK10C68 CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM SlfTlTEH FEA TU R ES DESCRIPTION 25,30, 35 and 45ns A ccess Times 12,15, 20 and 25ns Output Enable A ccess Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STO flETim ing

SuperSPARC

Abstract: STP1020 mbus sparc IEEE754 STP1021A instruction set Sun SPARC T4 instruction set Sun SPARC T6
Contextual Info: ST P 1021A S un M icro electro nics J u ly 1997 SuperSPARC -ll DATA SHEET SPARC v8 32-Bit Superscalar Microprocessor D e s c r ip t io n T h e ST P 1021A is a n e w m em b er o f the SuperSP A R C -II fam ily o f m icro p ro cesso r prod u cts. L ik e its p red eces­

Contextual Info: PRELIM INARY CY82C692 Pentium hyperCache™ Chipset Data-Path Controller with Integrated Cache Features • Supports ail 3.3V Pentium™-class processors, AMD K5, K6 and Cyrix M1 CPUs • Two-bit wraparound counter supporting Intel Burst or Linear burst sequence

C3JW

Abstract: 2246H5C 2246h5 marking D3G TMC2246 TMC2301 C2581 TMC2246H5C1 93C36 TMC2246H5C
Contextual Info: TMC2246 JH ^ M iM UM W M V V W CMOS Image Filter 11 x 10 Bit, 40M Hz The TM C2246 is a video speed convolutional array composed of four 1 1 x 1 0 bit registered multipliers followed by a summer and an accumulator. All eight multiplier inputs are accessible to the user and may be