ES 40 GF SWITCH Search Results

ES 40 GF switch

Abstract: pedal switch switch SNAP ACTION Pedal GFM, iec EN 60947-5-1 6AGL
Contextual Info: Foot switches // Series GF Features/Options - Without protective shield - Max. 4 contacts - Metal enclosure - High level of stability - Low pedal height - Wiring compartment - Ex version available - Available with mechanical interlock only for slow action S

M36DR432AD

Abstract: M36DR432BD
Contextual Info: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM

Contextual Info: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • Multiple Memory Product – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM

M36DR432AD

Abstract: M36DR432BD
Contextual Info: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM

torque m5x0.8

Abstract: ES 40 GF switch
Contextual Info: Issued July 1995 020-076 Data Pack G Pneumatic grippers and autoswitches Data Sheet RS stock numbers 182-5838, 182-5850, 182-5866, 182-5872, 182-5888, 182-5894, 182-5917, 182-5923, 777-003, 777-019, 777-025 Double acting – Parallel - ø10 to ø25 Holding point

15GL series

Abstract: C2580 automatic switch over circuit diagram ambit
Contextual Info: LIGHTED PUSH BUTTON SWITCHES 15GLseries 15GL series is a surface illuminated type lighted push button switch incorporating high-brightness LED chips. It provides colorful clear, uniform, semi-permanent illumination. The conductive rubber ensures sure operation with a light click feel.

RIA 250

Abstract: IRF40N03 04WDV S600C
Contextual Info: IRF40N03 ! N-CHANNEL Power MOSFET APPLICATION FEATURES ‹Fast Switching ‹ Low ON Resistance ‹Simple Drive Requirement ‹ Low Gate Charge ‹Low Gate Charge ‹ Peak Current vs Pulse Width Curve ‹ Inductive Switching Curves VDSS RDS ON Max. 30V .17.0mȍ

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . 4.80 [.189] 4.20 [.1 65] D 1.70 [.067] 4.80 [.189] 0 .6 0 [.024] C a i 4.60

M36DR432A

Abstract: M36DR432B
Contextual Info: M36DR432A M36DR432B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = VDDS =1.65V to 2.2V ■ – VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns

M36DR232A

Abstract: M36DR232B M36DR232
Contextual Info: M36DR232A M36DR232B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit (128K x16) SRAM, Multiple Memory Product FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = VDDS =1.65V to 2.2V ■ – VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns

M36DR432C

Abstract: M36DR432D
Contextual Info: M36DR432C M36DR432D 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = VDDS =1.9V to 2.1V ■ – VPPF = 12V for Fast Program (optional)

marking code gf

Abstract: diode marking H2
Contextual Info: SC211 0.8A ( 200V to 400V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GF Applications

ns 4150 da

Contextual Info: GP600DHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR S upersedes March 1997 version, DS4335 - 5. DS4335 - 5.7 Decem ber 1998 TYPICAL KEY PARAMETERS VCES 1600V VCE(sa„ 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS.

PEC11S

Abstract: C 039
Contextual Info: PL IA NT Features C OM n Push switch option standard *R oH S n Compact, rugged design n High reliability n Metal bushing/shaft LE AD F RE E n Surface mount version PEC11S Series - 12 mm SMD Incremental Encoder Electrical Characteristics Ro VE LEA HS RS D C ION FRE

Contextual Info: International IQ R Rectifier PD - 5.047B PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Fe at ur es • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

2MBI100L-120

Contextual Info: 2 M B I 1 OOL-1 2 0 1 OOA IGBT W ftfó rh iÈ : Outline Drawings (L SERIES) IGBT MODULE : Features • High Sp eed Switching "j + ' s ? Low Saturation Voltage •V E E tt (M O S * - H # i6 ) •M V a r i e t y Voltage Drive of Po w er Capacity Series

MULTIMASTER

Abstract: REMOTE OPERATED MASTER SWITCH siemens C167 siemens C167 spi C167 boot C167 loader LED for visible communication master ssc 1 SE11R type b mcb
Contextual Info: Microcontrollers ApNote AP1632 þ additional file AP163201.EXE available Using the SSC SPI Interface in a Multimaster System In the SAB C165 and C167, an internal High-Speed Synchronous Serial Interface is implemented providing serial communication between C167 / C165 or other

2824I

Abstract: FUJI DS-100
Contextual Info: 2SK901 ">1 FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S ^ HOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • UPS • DC DC converters • General purpose power amplifier

2N6783

Contextual Info: POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 2N6783 JTX, JTXV 2N6784 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

MG75Q2YS11

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .0[is Max. • Low saturation: V CE tn- = 0.5 n s (Max.)

Contextual Info: S DM8958 S amHop Microelectronics C orp. P reliminary May ,26 2004 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6.2A R DS (ON) P R ODUC T S UMMAR Y (P -C hannel) ( m W ) Max V DS S ID -30V

fuji igbt module

Contextual Info: 6-Pack IGBT 1200 V 50 A FUJI IGBT MODULE F series Outline Drawings • Features • Low Saturation Voltage • V o lta g e D rive • V a rie ty o f P ow er C apacity Series ■ A pplications • In ve rte r fo r M o to r D rive • AC and DC Servo Drive Am plifier

omron reed relay

Abstract: omron water level motor control wiring diagram omron reed EE-SX671 EE-SX672 RELAY OMRON 1n EE-1001-1 51 ti jbr
Contextual Info: Selection Guide-• Microdisplacement Sensor Sensing distance Appearance and dimensions 4 ± 0 .3 mm Output configuration Model Z4D-F04A Optical modulation Modulated Analog Features Page 44 Compact High performance at the resolution of 5 |xm. ON/OFF Z4D-F04D

FS5I

Contextual Info: 2SK951-MR FUJI POWER MOS-FET n -: hannel silico n p o w e r m o s -fet F -II SERIES Outline Drawings • Features • High speed switching • l ow on-resistance • No secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee