ES 2015 Search Results

tegra3

Abstract: nvidia tegra 4 arm 9435 nvidia tegra 3 OMAP 4470 tegra 2 1/Z160 gpu Nexus S camera IMX6QUAD tegra 3
Contextual Info: TM September 2013 • • • • • • Graphics in Freescale Introduction to graphics standards OpenGL ES vs OpenGL ES 2.0 vs OpenGL ES 3.0 vs OpenGL Freescale GPU_SDK Boundaries and relationship between layers and tools Benchmarks TM 2 Best Graphics Performance

MIL-STD-1560

Contextual Info: MIL-DTL-38999 Series III 9 99 38 L- III DT es IL- eri S M QPL and COTS Equivalent Industry-Standard • Military / Aerospace • Harsh-Environment MAY 2015 9 99 38 L- III DT es IL- eri S M QPL AND COTS EQUIVALENT MIL-DTL-38999 Series III The industry standard mil/

EMM5077

Abstract: EMM5077VU ED-4701 RO4003 C100p
Contextual Info: ES/EMM5077VU Preliminary C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 31.0 dBm Typ. •High Gain; GL = 26 dB(Typ.) •Wide Frequency Band ; 3.4 – 5.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5077VU is a power amplifier MMIC that

Contextual Info: ES/EMM5075X Preliminary Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω DESCRIPTION The ES/EMM5075X is a MMIC amplifier that contains a three-stage

EMM5069

Contextual Info: ES/EMM5069ZB Preliminary Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=32.5dBm typ. ・High Linear Gain: GL=30.0dB (typ.) ・Impedance Matched Zin/Zout=50Ω ・QFN 20pin Plastic Mold Package(ZB) Device DESCRIPTION The ES/EMM5069ZB is a MMIC amplifier that contains a four-stages

EMM5078X

Abstract: EMM5078 ED-4701
Contextual Info: Preliminary ES/EMM5078X C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 26 dBm Typ. •High Gain; GL = 30 dB(Typ.) •Wide Frequency Band ; 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5078X is a wide band power amplifier MMIC that

EMM5074X

Abstract: power amplifier tone control r 161 705 000 ED-4701 EMM5074
Contextual Info: Preliminary ES/EMM5074X C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 32.5 dBm Typ. •High Gain; GL = 28 dB(Typ.) •Wide Frequency Band ; 5.8 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5074X is a wide band power amplifier MMIC that

EMM5079

Abstract: ku vsat amplifier ED-4701 F14G 450MA
Contextual Info: Preliminary ES/EMM5079X X/ Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 25 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5079X is a wide band power amplifier MMIC that

Contextual Info: ES/EMM5075X Preliminary Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 12.7~15.4GHz Impedance Matched Zin/Zout=50 ✁ DESCRIPTION The ES/EMM5075X is a MMIC amplifier that contains a three-stage

BGY116E

Abstract: BGY116D
Contextual Info: Product specification Philips Semiconductors UHF amplifier modules BGY116D; BGY116E PIN N IN G - S O T 278B FEA TUR ES • 12.5 V nominal supply voltage PIN D ES C R IPTIO N • 6 W output power 1 RF input • Easy control of output power by DC voltage. 2

Contextual Info: System 5000 5021D-ES Wideband Delay Line System with External Spool Installation Manual Revision A Emcore Corporation System 5000 series Table of Contents General .3

Contextual Info: System 5000 5021D-ES Wideband Delay Line System with External Spool Installation Manual Revision A Emcore Corporation System 5000 series Table of Contents General .3

Turn-Key

Abstract: Adapters Sockets Product Presentations Giga-snaP™ BGA SMT Adapters Receptacles Prototyping Adapters Surface Mount Package Emulation Probing and Analysis Adapters BGA Sockets
Contextual Info:  RoHS ISO w i t h 900 d 08 20 i g n : 1 es Certified Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . 2 Catalog 26 Receptacles . . . . . . . . . . . . . . . . . . . . . 22 Package Conversion For Production Applications . . . . 24-25

Contextual Info: Accessories Surface mounting back box extender ring for adjustable microwave sensor 0041593 Range features PRODUCT OVERVIEW Ordering number 0041593 EAN code 5410288415932 Certifications CE Configured without PC Y es Programmable v ia remote handset Dimensions

2015M

Abstract: 2015M-2
Contextual Info: 0182998,. ACRI AN, INC 0D D 1414 2015M D ES C R IP TIO N 15 WATTS - 28 VOLTS 2 OHz The 2015M is an internally matched, common base transistor ' capable of providing 15 Watts of C W RF output power across the 1000-2000 M Hz band. This transistor is specifically designed

EMM5075

Contextual Info: ES/EMM5075VU Preliminary Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=24.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION

EMM5074VU

Abstract: emm5074 Power Amplifier MMIC EMM5074VU ED-4701 RO4003 TCHC11
Contextual Info: ES/EMM5074VU Preliminary C-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 5.9-8.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION

SCL 1058

Abstract: Diclad-522 power amplifier mmic
Contextual Info: ES/FMM5822VU Preliminary K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=32.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band: 17.7~19.7GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION

EMM5079ZB

Abstract: ED-4701 RO4003
Contextual Info: Preliminary ES/EMM5079ZB X/ Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25.5 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB)

SM 686 6V

Abstract: FMM5804YD 5kw power amplifier POWER AMPLIFIER CIRCUIT DIAGRAM 10000 ED-4701 RO4003 ka-band amplifier ES 1373
Contextual Info: ES/FMM5804YD K,Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 24.5 dBm Typ. •High Linear Gain; GL = 17 dB(Typ.) •Frequency Band ; 17.5 - 30.0 GHz •SMT Laminate Package (YD Package) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION

EMM5078ZV

Abstract: ED-4701 RO4003 EMM5078
Contextual Info: Preliminary ES/EMM5078ZV C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 26 dBm Typ. •High Gain; GL = 30 dB(Typ.) •Wide Frequency Band ; 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 24pin Plastic Mold Package(ZV) DESCRIPTION

pc123y22

Abstract: gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK S2S4A00F GP2S24BC GP2Y0A21YK
Contextual Info: ES: Eric Sunderhaus, JD: Jeremy Dietz, RS: Robert Stuart PART NUMBER BS100C BS500B BS520 MKT INT JD JD JD PART DESCRIPTION / REPLACEMENT Blue Sens. PD Blue Sens. PD Blue Sens. PD Lead Free Part Number Lead Free Version of Replacement BS100C0F BS500B0F

YC 27000

Abstract: yc 428 transistor ED-4701 RO4003 FMM5709YC FMM5709
Contextual Info: ES/FMM5709YC K-Band Low-Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=30GHz ・High Associated Gain : Gas = 21dB ( Typ.) @f=30GHz ・Broad Band : 17.5~30GHz ・High Output Power : P1dB = 12｡5dBm ( Typ. ) @f=30GHz ・Laminate SMT Package(YC-pkg)

Contextual Info: Certified Safety Capacitors X2, Y3 & X1, Y2 X2, Y3 LS style and X1, Y2 (ES style) Class Compliant* chip capacitors specifically designed for use in modem, facsimile, telephone and other electronic equipment where lightning or overvoltage surges can occur. Both styles are rated at 250 Vac