ERW10 Search Results

power Diode 200V 10A

Abstract: ir igbt 1200V 10A "Power Diode" diode Vr 1200v ERW10-120 power diode 10a 10a 1200v diode
Contextual Info: ERW10-120 10A/1200V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current

Contextual Info: S P E C I F I C A T I O DEVICE NAME : TYPE NAME : N SILICON DIODE ERW1 0-1 2 0 SPEC. No. . DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED DRAWN Fuji Electric CouUd L CHECKED r 1/6 Y 0257-R-004a

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

Contextual Info: S P E DEVICE NAME TYPE NAME C I F I C A T I O N SILICON DIODE E R W 1 0 - 1 2 0 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric C odici DRAWN, CHECKED r o ' ac o ' a 1 / 6

Contextual Info: S P E DEVICE NAME TYPE NAME C I F I C A T I O N SILICON DIODE E R W 1 0 - 1 2 0 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric C odici DRAWN, CHECKED r o ' ac o ' a 1 / 6

1MBC15-060

Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
Contextual Info: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

83C795

Contextual Info: 83C795 GENERAL DESCRIPTION 1.0 GENERAL DESCRIPTION 2.0 The SMC 83C795 Ethernet System Controller implements the IE EE 802.3 protocol for networks such as Ethernet, Cheaper net, a x i l OBas eT. Itis a highly i ntegated device that s hri nks theessenceof aLAN adapter cardontoasincjepeceofsilioon. It

igbt 200v 20a

Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900

U3 5080A

Abstract: Zl02
Contextual Info: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NAME : E R W 1 0 -1 20 SPEC. No. . DATE F u j i E l e c t r i c Co., Ltd. This S p e cifica tio n is subject to change without notice. DATE NAM E APPROVED DRAWN F u ji E l e c t r i c C o J j t d _ i CHECKED

tc122 25

Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060

2MBI450U4E-120

Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
Contextual Info: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！

LA 7673 diagrams

Abstract: 83C790 transistor ga62 83C690 ga48 LA 7673 RB1-2X 83C795 GA59 ct08 series
Contextual Info: Ethernet System Controller • 83C 795 Data Book 83C795 TABLE OF CONTENTS TABLE OF CONTENTS 1.0. GENERAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2.0. FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

RF LNB C band chipset

Abstract: rfw102 RFW488C RFW24-A1 RFW488 white noise Generator 1GHz RFW102 front end RFW24 RFW-102 RF transceiver 2.4GHz wireless charging
Contextual Info: Datasheet October 2002 Rev. 1.03 RFWaves Ltd. RFW102 ISM Transceiver Chipset Key Features • • • • • • • • Designed for short range wireless communication in 2.4GHz - world wide license free band Data rate – up to 1Mb per second Simple interface – 3 line digital interface