ERW09 Search Results

Diode 1200V 8A

Abstract: ERW09-120
Contextual Info: ERW09-120 8A/1200V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

ERW09-120

Contextual Info: SPECIFICATION SILICON DIODE DEVICE NAME TYPE NAME : E R W 0 9 - 1 20 SPEC. No. DATE F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE DRAWN NAM E APPROVED Fuji Electric CoJLid < C\ CHECKED 1/6 Y 0257-R“004a Ratings and characteristics of Fuji silicon diode

1MBC15-060

Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
Contextual Info: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V

25FC11

Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME : SILICON DIODE E R W O 9 - 1 20 * SPEC. No. " _ DATE_ ;_ „ F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric C o jid

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

igbt 200v 20a

Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900

tc122 25

Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060

2MBI450U4E-120

Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
Contextual Info: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！

Contextual Info: S P E C I F I C A T I ON SILICON DIODE DEVICE NAME TYPE NAME : E R W O 9-1 2 0 SPEC. No. . DATE Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. DATE DRAWN NAME APPRO VED Fuji Electric C oJjtd I A. CHECKED 1/6 Y 0257-R“004a

Contextual Info: S P E C I F I C A T I ON DEVICE NAME : SILICON DIODE TYPE NAME : E RWO 9 - 1 2 0 - SPEC. Mo. : DATE . Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CoJjtd. DRAWN • CH£CX£D 1/6 Y 0257-R-004a

Contextual Info: S P E C I F I C A T I ON SILICON DIODE DEVICE NAME TYPE NAME : E R W O 9-1 2 0 SPEC. No. . DATE Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric CoJjtd I A. CHECKED 1/6 Y 0257-R“004a

1mbh

Abstract: igbt 200v 30a
Contextual Info: /\°7 —x / W 7s • 1G B T^-«M /K £ < 7 S i U > v ffl i / Power Devices M olded Package Type IGBTs ; 1/K -f 7° / * ¥ H IS]11^ ffl i ^ K ^ < 7° Molded package types, such as microwave ovens / Horizontal deflection circuit V géS fc PC rt,>r-y Volts Volte