ERIE .33 400 Search Results

Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

ERIE CAPACITORS

Abstract: SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent
Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

graff Thermal conductance across metal joints

Abstract: ceramic tube amplifier TP-105 TP-118 TP-122 7843
Contextual Info: Return To Product Page 7843 Power Tube Conduction-Cooled UHF Beam Power Tube • • • • Cermolox Construction Oxide-Coated Cathode Conduction Cooled Peak Power Output: 400 MHz - 80 W 1215 MHz-40W BURLE 7843 is a compact, conduction-cooled UHF beam power tube designed for applications where air

SP900

Abstract: N5600
Contextual Info: cer4-9.pdf source 7/24/98 4:38 PM Page 1 SPECTRUM CONTROL INC. yer Electrostatic Discharge ESD proof Available from .05 pF - 5,000 pF Standard voltage range of 50-100 VDC Excellent for Broadband and Microwave Applications Custom sizes, values, shapes, tolerances and highest

TP-105

Abstract: TP-118 TP-122 erie ceramic radiator 0,019
Contextual Info: Return To Product Page 4631 Power Tube Beam Power Tube - Cermolox - Ruggedized - Oxide-Coated Cathode - Forced-Air Cooled - 80 Watts CW Power Output at 400 MHz - 40 Watts CW Power Output at 1215 MHz BURLE 4631 is a compact, forced-air cooled uhf beam power

9061-100-1001

Abstract: 9050-100-0000
Contextual Info: EMI SUPPRESSION FILTERS HERMETICALLY SEALED to M IL-F-15733 L o w Pass - LT, LB & Pi Types .350 MAX. BOTH ENDS LTType LB Typo IKS 0^1T57X g PI Typo Part Number 9060-100-0010 9060-100-0000 9060-100-0011 9060-100-0001 9060-100-0012 9060-100-0002 9060-100-0013

Contextual Info: c erl4-19.pdf source 7/27/98 9:35 AM Page 1 SPECTRUM CONTROL INC. Highest Q chip available 20% performance increase over standard High Q chips on the market Ideal for high performance RF/Microwave applications 500 WVDC High self-resonance Mechanical Capacitance range 1 to 100 pF

AL1510

Abstract: FL4010 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN4007S IN5405 diode AG206 Diode IN5398
Contextual Info: 1. Q U IC K R E F E R E N C E TABLE FOR R EC TIFIE R DIO D E 1-1 1 AMPERE TO 6 AMPERES GENERAL PURPOSE AXIAL LEAD SILICON RECTIFIER VF V @IO (DC) PACKAGE PAGE 50 100 200 300 400 500 600 800 1000 FWD SURGE (A) 1.0 IN4001 IN4002 1N4003 - IN4004 - IN4005 IN4006

560-2 565-1 capacitor

Abstract: capacitor B101K f472m capacitor 472M 222m capacitor 471K CAPACITOR F222M DE7100 DE7090 ac 472m
Contextual Info: SAFETY RECOGNIZED CERAMIC DISC CAPACITORS m tiFfntet PART NUMBERING SYSTEM DE7150 FZ 103 P VA1 t I_ K C/M Y CAPACITANCE VALUE CAPACITANCE VOLTAGE LISTED TYPE CAPACITOR TEMPERATURE CHARACTERISTICS Expressed in picofarads and identified by a TOLERANCE VA1=400 VAC: Europe

ferroxcube 56-590-65

Abstract: UT25 coaxial 2N6439 UT25 VK200
Contextual Info: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

Johanson Piston Trimmer

Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Contextual Info: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

MRF325

Abstract: MRF-325
Contextual Info: MOTOROLA Order this document by MRF325/D SEMICONDUCTOR TECHNICAL DATA MRF325 . . . designed primarily for wideband large–signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts

2n6439

Abstract: UT25 VK200 Ferox
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

Contextual Info: MOTOROLA Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

J023

Abstract: jmc 5201
Contextual Info: MOTOROLA Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts

MRF323

Abstract: ferroxcube 56-590-65
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF323 Product Image Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range.

MRF321

Abstract: ferroxcube 56-590-65
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.

SKC-201

Abstract: RS2353 SKP2-30 sk 3x-5 bv 304 SKl-203 13X1 SKP1-50
Contextual Info: INDUCTORS FOR SMPS, REGULATOR, CONTROL AND ENERGY STORAGE MICROTRAIM SKC SERIES RS SERIES LINEAR INDUCTANCE TO 100kHz. LINEAR INDUCTANCE TO 300kHz. SMOOTHING AND ENERGY STORAGE COILS SMOOTHING AND ENERGY STORAGE COILS SKC-101 5-10 30 0.009 32 18 1.3x1 S K C-102

MRF327

Contextual Info: <^s,m.i-Contiu.ctoi ZPtoauati, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the

Contextual Info: Accelerator Series FPGAs - A C T 3 Family Features Replaces up to twenty 32 macro-cell CPLDs • Replaces up to one hundred 20-pin PAL Packages Up to 10,000 Gate Array Equivalent Gates u p to 25,000equivalent PLD Gates • Up to 1153 Dedicated Flip-Flops

SCI-2160-013

Abstract: SCI-2160-014 SCI-2060-013 SCI-2160-013 spectrum SCI-2160-013, of spectrum control In SCI-2060-014 SCI-2060-007 SCI-2060-009 2360-014 SCI-2360-014
Contextual Info: Product Datasheet for SCl-2360-014 Integrated Search SPECTRÜM CONTROL INC. A Control Producta & Systems Company Product • C M Us BOOKMARK THIS PAG€ BACK | ^CH ECK STOCK |

Contextual Info: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

331J COG 100

Abstract: MT-11
Contextual Info: cer37.pdf source 7/27/98 9:10 AM PiVÍS Ffei'ex blue r>ec. Black neg. Ideal for high humidity applications Excellent bridge for 1C applications Allows space savings on board applications Electrical Specifications S ty le C ode Mechanical Specifications C a p a c ita n c e R ange pF

CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Contextual Info: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM