ER 900 Search Results

Contextual Info: 3 Am p E ncapsulated Assem blies ER Series Dimensions Inches A U C D t Millimeters 1.31 0.44 1.06 0.47 Notes 33.3 11.1 26.9 11.9 Note 1: l/ 4 " - 2 0 Mounting Stud Microsemi Catalog Number ER*1B1 ER*2B1 ER*3B1 ER*4B1 ER.5B1 ER.6B1 ER*7B1 ER»8B1 ER»9B1 ER*10B1

diode 10b1

Abstract: ER 900 4b1 diode diode 6b1 6B1 DIODE
Contextual Info: 3 Amp Encapsulated Assemblies ER Series D im e nsio ns Inches A B C t Microsemi Catalog Number 1.31 0.44 1.06 0.47 Millimeters 33.3 11.1 26.9 11.9 - Notes 1 Max. PRV Rating Per Circuit Arm ER»1B1 ER*2B1 ER*3B1 ER*4B1 ER*5B1 ER*6B1 ER.7B1 ER.8B1 ER*9B1

Contextual Info: Corcom is a recognized ISO 9001 registered firm. ISO 9001 A3256 A4003 POW ER ENTRY PRODUCTS A complete line of power entry modules solves a variety of pow er' entry needs by combining functions to reduce cost, space and labor. RFI POW ER LINE FILTERS FILTERED

LM391 equivalent

Abstract: lm391 IC LM391 JE182 JE722 OF LM391 550JA
Contextual Info: LM391 & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio pow er driver is designed to drive external pow er tra n sisto rs in 10 to 100 w att pow er am plifier designs. High pow er supply voltage operation and true high fidelity

p811t

Contextual Info: MP ISO 9001 Registered P ow er , , M anagem ent |LlP Supervisor with Battery Backup Switch The IMP690A/IMP692A/IMP802L/ IMP802M/IMP805L simplify pow er supply m onitoring and control in microprocessor systems. Each circuit implements four functions: Reset control, w atchdog monitoring, batterybackup sw itching and pow er-failure m onitoring. In addition to

Contextual Info: Proud to be ISO 9001:2008 Certified 41I nt er s t at eLane Wat er bur y ,CT06705USA P:203. 755. 5629 F:203. 755. 0659 Emai l :s al es @f i l mc apac i t or s . c om www. f i l mcapaci t or s. com Ser i esHV1313TC Met al l i z edPol yest er Feat ur es:Fl amer

a417b

Contextual Info: CY7B1094 CY7B1095 CY7B1096 . ä PRELIMINARY s O s r# " ‘Y P P F . Ç . ^ — SEMICONDUCTOR Features • H igh speed — tAA = 6 ns • B iC M O S fo r o p tim u m speed/pow er • Low active pow er — 900 mW • Low stan d b y pow er — 350 mW • A utom atic power-down w hen

2N5915

Abstract: 2N5914 VK20009-3B VK200093B ta7409 rca 632 rca power transistor 14-150 pf 424 VK200-093B C3097
Contextual Info: File No. 424 rotBÆ Solid State RF Pow er Transisto rs Division 2N5914 2N5915 H ig h -P o w er Silicon N -P -N O verlay Transistors 12.E>-Volt, High-Pow er T yp es F o r Class-C A m p lifie rs in

Contextual Info: Corcom is a recognized ISO 9001 registered firm. ISO 9001 A3256 A4003 POW ER ENTRY PRODUCTS RFI POW ER LINE FILTERS FILTERED MODULAR JACKS Corcom’s Signal Sentry filtered modular jacks com bing different levels of filtering with RJ45 and RJ11 jacks to solve,

Contextual Info: SOT143 4-PIN SMT Package • • • • ISO-9001 Registered Several standard schematics Small, industry standard package Ratio tolerances to ±0.05% Custom circuits available Specifications Value Package Pow er Dissipat ion 0.25 Watt s @ 70°C Elem ent Pow er Dissipat ion

amperex transmitting

Abstract: 300 watts amplifier Amperex Scans-0017356
Contextual Info: AMPEREX TRANSMITTING T UBE 203-H FULLY INTERCHANGEABLE WITH HF-125 R.F. Pow er Am plifier, Oscillator, A.F. Pow er Am plifier, M odulator ^ IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIM ^ MAXIMUM RATINGS AND TYPICAL

Contextual Info: PRELIMINARY JS9P12A-AS Apr. 1999 1. RF PERFORMANCE SPECIFICATIONS Ta= 25«C 1 CHARACTERISTICS O utp ut Pow er at ldB Com pression Point Pow er G ain a t ldB Com pression Point D rain C u rren t Pow er A dded Efficiency SYMBOL CONDITION MIN. TYP. MAX. U N IT

aaBO

Contextual Info: TOSHIBA 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. 5.1 MAX PO W ER SWITCHING APPLICATIONS. PO W ER AM PLIFIER APPLICATION. High DC Current Gain : hpE = 200 (Min.) (V(jE = —2V, Iç; = —1A)

Contextual Info: APT10M07JVR A d van ced P o w er Te c h n o l o g y 100V 225A 0.007Q POWER MOS V‘ Pow er M OS V® is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

ScansU9X26

Abstract: amperex transmitting
Contextual Info: AMPEREX TRANSMITTING FORCED-AIR 220-R TUBE COOLED R.F. Pow er Am plifier, Oscillator, A.F. Pow er Am plifier, or M odulator |‘ MAXIMUM RATINGS AND TYPICAL OPERATING CONDITIONS

"amf st8 dslam ic2"

Contextual Info: MEDIUM POWER AMPLIFIERS CONTJ/POW ER AMPLIFERS r OPERATING GAIN NOISE OUTPUT VSW R MODEL FREQUENCY G A IN FLATNESS FIGURE POW ER IN/OUT NUMBER (G Hz (d B, Min.) (±dB. Max.) ( d B . Max.) ( d B m . Min.) (Max.) 1 DC POW ER m +15 v (m A. N o m .) OUTLINE

lm 383 ic

Contextual Info: 2SB1457 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER Unit in mm M ICRO M OTOR DRIVE, HAM M ER DRIVE APPLICATION S. POW ER SW ITCHIN G A PPLICATIO N S. POW ER AM PLIFIER APPLICATIO N . • • High DC C urrent Gain : hpE = 200 (M in.)(V cE= -2 V , Ic = - 1 A )

epm7032v

Contextual Info: Features. □ □ Preliminary Information □ □ □ □ □ 3.3-V version of the popular EPM7032 EPLD Combinatorial speeds with tPD = 12 ns Clock frequencies up to 90.9 M Hz Innovative pow er-saving features 30% to 50% pow er savings over 5-V operation Power-down m ode controlled by a pow er-down pin to allow

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC2235 NPN SILICON TRANSISTOR AU DI O POWER AM PLI FI ER APPLI CAT I ON S DRI V ER ST AGE AM PLI FI ER APPLI CAT I ON S ̈ FEAT U RES * Complimentary to UTC 2SA965 Lead-free: 2SC2235L Halogen-free: 2SC2235G ̈ ORDERI N G I N FORM AT I ON

1000 WATTS AMPLIFIER

Abstract: 80 watts power amplifier amperex 212 amperex transmitting Amperex Scans-0017355 100 watts power amplifier
Contextual Info: AMPEREX TRANSMITTING TUBE 203-A R.F. Pow er Am plifier, O scillator, A.F. Pow er Am plifier, M odulator ^ iiiiiiiim iiiiiiiiiiiiiiiiiiiim iiiiim MAXIMUM RATINGS AND TYPICAL I OPERATING CONDITIONS GENERAL CHARACTERISTICS

Contextual Info: plerowTM APM0950-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 32.0 dB @ 900 MHz = 30.0 dB @ 1000 MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply

Contextual Info: What wL'tiM HEW LETT PACKARD Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC M edium Pow er Am plifier • 150-960 MHz O perating Range • +22 dBm Typ. Phk , +23 dBm Typ. P sat @ 900 MHz • 50 dB Typ. Pow er Control

FEE430

Abstract: FEE 160 FEE532 FEE160-2 25CC PF500 UL-94-V0 FEE425 FEE509 fee 222-3-2
Contextual Info: PT EuC H lN IsT ReO L *C O MEP A EN Y A FEE 100 - 900 Series Low Cost Pow er Inductors , Inductances de puissance série économique K ey Features Caractéristiques Application schematics for Low Cost Pow er Inductors Schém as d'application pour inductance de puissance

d 2822-M

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC0913 900 MHz GaAs Integrated Power Amplifier T h is integrated circuit is intended for G S M c la s s IV handsets. T he d evice is specified for 2.8 watts output pow er and 48% minimum pow er added efficiency