ER 900 Search Results

Contextual Info: 3 Am p E ncapsulated Assem blies ER Series Dimensions Inches A U C D t Millimeters 1.31 0.44 1.06 0.47 Notes 33.3 11.1 26.9 11.9 Note 1: l/ 4 " - 2 0 Mounting Stud Microsemi Catalog Number ER*1B1 ER*2B1 ER*3B1 ER*4B1 ER.5B1 ER.6B1 ER*7B1 ER»8B1 ER»9B1 ER*10B1

LM391 equivalent

Abstract: lm391 IC LM391 JE182 JE722 OF LM391 550JA
Contextual Info: LM391 & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio pow er driver is designed to drive external pow er tra n sisto rs in 10 to 100 w att pow er am plifier designs. High pow er supply voltage operation and true high fidelity

p811t

Contextual Info: MP ISO 9001 Registered P ow er , , M anagem ent |LlP Supervisor with Battery Backup Switch The IMP690A/IMP692A/IMP802L/ IMP802M/IMP805L simplify pow er supply m onitoring and control in microprocessor systems. Each circuit implements four functions: Reset control, w atchdog monitoring, batterybackup sw itching and pow er-failure m onitoring. In addition to

2N5915

Abstract: 2N5914 VK20009-3B VK200093B ta7409 rca 632 rca power transistor 14-150 pf 424 VK200-093B C3097
Contextual Info: File No. 424 rotBÆ Solid State RF Pow er Transisto rs Division 2N5914 2N5915 H ig h -P o w er Silicon N -P -N O verlay Transistors 12.E>-Volt, High-Pow er T yp es F o r Class-C A m p lifie rs in

amperex transmitting

Abstract: 300 watts amplifier Amperex Scans-0017356
Contextual Info: AMPEREX TRANSMITTING T UBE 203-H FULLY INTERCHANGEABLE WITH HF-125 R.F. Pow er Am plifier, Oscillator, A.F. Pow er Am plifier, M odulator ^ IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIM ^ MAXIMUM RATINGS AND TYPICAL

"amf st8 dslam ic2"

Contextual Info: MEDIUM POWER AMPLIFIERS CONTJ/POW ER AMPLIFERS r OPERATING GAIN NOISE OUTPUT VSW R MODEL FREQUENCY G A IN FLATNESS FIGURE POW ER IN/OUT NUMBER (G Hz (d B, Min.) (±dB. Max.) ( d B . Max.) ( d B m . Min.) (Max.) 1 DC POW ER m +15 v (m A. N o m .) OUTLINE

lm 383 ic

Contextual Info: 2SB1457 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER Unit in mm M ICRO M OTOR DRIVE, HAM M ER DRIVE APPLICATION S. POW ER SW ITCHIN G A PPLICATIO N S. POW ER AM PLIFIER APPLICATIO N . • • High DC C urrent Gain : hpE = 200 (M in.)(V cE= -2 V , Ic = - 1 A )

1000 WATTS AMPLIFIER

Abstract: 80 watts power amplifier amperex 212 amperex transmitting Amperex Scans-0017355 100 watts power amplifier
Contextual Info: AMPEREX TRANSMITTING TUBE 203-A R.F. Pow er Am plifier, O scillator, A.F. Pow er Am plifier, M odulator ^ iiiiiiiim iiiiiiiiiiiiiiiiiiiim iiiiim MAXIMUM RATINGS AND TYPICAL I OPERATING CONDITIONS GENERAL CHARACTERISTICS

Contextual Info: L 67130/L 67140 DATA SHEET 1Kx8 CMOS DUAL PORT RAM 3.3 Volt FEATURES . SINGLE 3.3 V + 0.3 VOLT POW ER SU P PLY . FAST A C C E S S TIME 45 NS * TO 70 NS . 67130L/67140L LOW POWER 67130V/67140V V ER Y LOW POW ER . EXPAN D ABLE DATA BU S T 0 16 BITS OR MORE

Contextual Info: AWT924S10 TX POW ER MMIC Advanced Product Information Rev. 1 G SM /DCS DUAL BAND GaAs POW ER AM PLIFIER IC DESCRIPTION The A W T924 is a monolithic G a A s Power Amplifier. It can be used in the following dual band handset applications: G SM 900/D C S1800.

2050 tube

Abstract: 200 watt audio amplifier amperex transmitting amperex Scans-0017360 3000 watts audio amplifier
Contextual Info: Audio Frequency Pow er Am plifier or M odulator Radio Frequency Pow er Am plifier or Oscillator MAXIMUM RATINGS AND TYPICAL OPERATING CONDITIONS '|llllll!lim I A.F. Power Amplifier or Modulator—Class A

tube 211

Abstract: amperex Scans-0017360
Contextual Info: FULLY INTERCHANGEABLE WITH AMPEREX HF 140 R .F . Pow er Am plifier, Oscillator, A.F. Pow er Am plifier, M odulator MAXIMUM RATINGS AND TYPICAL I OPERATING CONDITIONS Filament: Voltage Current Amplification Factor A.F. Power Amplifier or Modulator—Class A

ER9.5

Abstract: 5-3F45-S 250 B 340 smd Transistor SMD .A40 5-3C94-A63-S er9,5 3C92 3C96 CBW092
Contextual Info: FERROXCUBE DATA SHEET ER9.5/2.5/5 Planar ER cores and accessories Supersedes data of February 2002 2004 Sep 01 Ferroxcube Planar ER cores and accessories ER9.5/2.5/5 CORE SETS Effective core parameters SYMBOL PARAMETER handbook, halfpage VALUE 1.6 +0.15 UNIT

8030J

Contextual Info: A P T 8030J V F R • R A dvanced W *Æ POW ER Te c h n o lo g y soov 2sa 0.300Q POWER MOS V FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,

Contextual Info: TOSHIBA MIG150Q101H TOSHIBA INTELLIGENT PO W ER MODULE SILICON N CHANNEL IGBT MIG150Q101H HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.

apt50m85jvr

Contextual Info: • R ADVANCED APT50M85JVR W /Æ P o w e r Techno lo g y soov soa o.ossq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

M3X22

Contextual Info: WTL 4/STB Disconnect Terminals lateral disconnect Slide link disconnect terminals offer a superior solution for simple current transform er circuits and measurement transform er test sets using W TL 4 and W TL 6/1 lateral disconnect terminals, WTD 6/1 feed through terminals

2SB1557

Abstract: 2SD2386
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1557 03.2 ±0.2

Lucent receiver

Abstract: 26LS32 BRF1A16E BRF1A16E-TR BRF1A16G BRF1A16G-TR IN4148 BRS2A16G BRR1A A16E
Contextual Info: Data Sheet March 1999 group Lucent Technologies Bell Labs Innovations Quad Differential Receivers BRF1A, BRF2A, BRR1A, BRS2A, and BRT1A Features • Pin equivalent to the g eneral-trade 26LS32 device, w ith im proved speed, reduced pow er consum ption, and significantly low er levels of EMI

cd 1191 acb

Abstract: cd 1191 cb AM7960 PE5156X AM7960DC carrier detect phase shift Am79C900 AM7992 TXC18
Contextual Info: Cl Advanced Micro Devices Am7960 Coded Data Transceiver DISTINCTIVE CHARACTERISTICS Universal N etworking Transceiver High im pedance interface to coupling transform er - User transparent M anchester e n co d ing /d e co din g - G litch-free pow er u p /d o w n

2SC2655 Silicon NPN Epitaxial Type

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS PO W ER AM PLIFIER APPLICATIONS. PO W ER SW ITCH IN G APPLICATIONS. • • • Low Saturation Voltage : VCE (sat) = 0-5V (Max.) (IC = 1A) High Speed Switching Time : tstg = 1.0^s (Typ.) Complementary to 2SA1020.

ITR8102

Abstract: IS09001
Contextual Info: EV ER LIG H T IS 0 9 0 0 1 QS9000 APPROVED General Purpose Photo Interrupter ITR8102 Features: Package Dimensions: IR: • LOW FORWARD VOLTAGE. • PEAK W AVELENGTH Xp=940nm. • HIGH RADIANT POW ER AND HIGH RADIANT INTENSITY. • HIGH RELIABILITY. 24.4+0.2

BU 508 AF

Abstract: til 431 TAG 8534 STI SMART POSITIONER Til 160 ET 81 K ic 8279 TIL 123 et 455 MICK 494 CN
Contextual Info: 7.5” TI-92 Vejledning 10” TI-92 VEJLEDNING TI-92 Geometry er udviklet af TI og forfatterne til Cabri Geometry IIè, der arbejder på Université Joseph Fourier, Grenoble, Frankrig. TI-92 Symbolic Manipulation er udviklet af TI og forfatterne til programmet

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)