EPSILAM 10 Search Results

Contextual Info: N AtlER P H I L I P S / DI S C R E T E ObE.D • bb53^31 U □□ISIS? □ ■ PZ1418B15U PZ1721B12U P Z2024B 10U l 77- 3 3 ' 0 7 M ICRO W AVE POWER TR AN SISTO RS FOR BR O AD BAN D A M P LIFIE R S N-P-N transistors for use in common-base, class-B, wideband amplifiers under c.w. conditions in

Contextual Info: j N AMER P H I L I P S / D I S C R E T E DbE D • 0015137 J 3 ■ PZ1418B30U PZ1721B25U lPZ2024B20U T - 33 ''ll MICROWAVE POW ER TRANSISTORS FO R WIDEBAND A M P LIFIER S N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in

PZ1418B30U

Abstract: PZ1721B25U PZ2024B20U
Contextual Info: N AMER PHILIPS/DISCRETE DbE D • LbSBTBl DD1S137 3 ■ " PZ1418B30U PZ1721B25U PZ2024B20U J T - 3 3 - U MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in m ilitary and professional applications.

transistor M7A

Abstract: philips 33m PZ1418B30U PZ1721B25U PZ2024B20U epsilam 10
Contextual Info: PZ1418B30U PZ1721B25U JÌ P Z 2 0 2 4 B 2 0 U PHILIPS INTERNATIONAL SbE D • 711GÛ2b DCmb47fl ITH ■ PHIN MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS NPN transistors fo r use in common-base, ciass-B, broadband am plifiers under CW conditions in

epsilam 10

Abstract: 5308-2CC M151 SD1893-03 epsilam cdi ic
Contextual Info: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS POUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE

5308-2CC

Abstract: 6 pin cdi epsilam 10 epsilam InMarSat power M151 SD1893-03 cdi ic
Contextual Info: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS P OUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE

m147 transistor

Abstract: 1029F M147 ci m147 SD1868
Contextual Info: Hi f I r l / C lU O J v f I If P ro g re s s P o w ered b y T ec h no log y 140 Com m erce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1868 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.6-1.65GHz POWER OUT

Contextual Info: SGS-THOMSON S D 1 8 9 3 -0 3 It L I C T G » RF & MICROW AVE TR AN SISTO RS 1.6 GHZ SATCOM APPLIC ATIO N S . 1.65 GHz • 28 VOLTS . OVERLAY DIE GEOMETRY . GOLD METALLIZATION * HIGH RELIABILITY AND RUGGEDNESS ■ P o u t = 10 W MIN. WITH 11.0 dB GAIN . COMMON BASE

Contextual Info: / = 7 S G S - T H O M S O N SD1542 ^ 7 / . M Œ m iIêTM M IKêS RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS . 600 WATTS typ. IFF 1030/1090 MHz . 550 WATTS (min.) DME 1025 - 1150 MHz • 5.6 dB MIN. GAIN

epsilam

Abstract: PZ1418B15U PZ1721B12U PZ2024B10U
Contextual Info: JI _ - PHILIPS PZ1418B15U PZ1721B12U PZ2024B10U SbE J> INTERNATIONAL • 7110flEb OOMbMbfl E55 ■ P H I N MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS T ^ ^ 3 -O S NPN transistors for use in common-base, class-B, wideband amplifiers under CW conditions in military

PZ1418B30U

Abstract: PZ1721B25U PZ2024B20U SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U;

40511

Abstract: SD1501 400MS l band radar
Contextual Info: H ftm'nanr-*s*-*rt j-»-»S 140Commerce Drive Ifl/C ii f M i i iontgom u m y u i i iery c i y ville, v i i i c , PA r n 18936-1013 Tel: 215 631-9840 W "l-4 r A 4 S U I 50 1 P ro g re s s P o w e re d b y T e c h no log y RF & MICROWAVE TRANSISTORS L BAND RADAR APPLICATIONS

MF1011B900Y

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C

HUGHES mcw 550

Abstract: discharge capacitor welding hughes welder welder hughes mcw 550 hughes capacitor discharge welder mcw-550 VTA90 welding "application note" MAXY90
Contextual Info: Beam Lead Device Bonding to Soft Substrates Application Note 993 Introduction The hard gold surface on standard PC boards combined with soft substrate materials makes it almost impossible to successfully bond beam lead devices onto the boards with normally recommended

SD1423

Abstract: SD1424
Contextual Info: SD1424 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . . 800 - 900 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION POUT = 30 W MIN. WITH 7.5 dB GAIN .250 x .320 4LFL M156 epoxy sealed

ATC100

Abstract: M151 SD1891-03
Contextual Info: SD1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS GOLD METALLIZED SYSTEM POLYSILICON SITE BALLASTING OVERLAY DIE GEOMETRY HIGH RELIABILITY AND RUGGEDNESS P OUT = 5.0 W MIN. WITH 14.0 dB GAIN .230 2LFL M151 hermetically sealed

SD1423

Abstract: SD1424 180PF
Contextual Info: SD1424 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . . 800 - 900 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION P OUT = 30 W MIN. WITH 7.5 dB GAIN .250 x .320 4LFL M156 epoxy sealed

cdi unit

Abstract: SD1899 MURATA ERIE CAPACITOR
Contextual Info: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METAL LIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION

RF NPN POWER TRANSISTOR 3 GHZ

Abstract: ATC100 M151 SD1891-03
Contextual Info: SD1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS GOLD METALLIZED SYSTEM POLYSILICON SITE BALLASTING OVERLAY DIE GEOMETRY HIGH RELIABILITY AND RUGGEDNESS POUT = 5.0 W MIN. WITH 14.0 dB GAIN .230 2LFL M151 hermetically sealed

SD1899

Contextual Info: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION

Contextual Info: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2L FL M170 epoxy sealed O RDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION

Contextual Info: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C

Contextual Info: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

PZ1418B15U

Abstract: PZ1418B30U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PZ1418B15U FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR