EPSILAM 10 Search Results

Contextual Info: N AtlER P H I L I P S / DI S C R E T E ObE.D • bb53^31 U □□ISIS? □ ■ PZ1418B15U PZ1721B12U P Z2024B 10U l 77- 3 3 ' 0 7 M ICRO W AVE POWER TR AN SISTO RS FOR BR O AD BAN D A M P LIFIE R S N-P-N transistors for use in common-base, class-B, wideband amplifiers under c.w. conditions in

Contextual Info: ^ PHILIPS international PZ1418B15U PZ1721B12U p Z2024B10U I 5bE J> m 7110flEb OGMbMbfl 25S •PHIN MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS T ^ -3 3 -O S N PN transistors for use in common-base, class-B, wideband amplifiers under CW conditions in military

Contextual Info: j N AMER P H I L I P S / D I S C R E T E DbE D • 0015137 J 3 ■ PZ1418B30U PZ1721B25U lPZ2024B20U T - 33 ''ll MICROWAVE POW ER TRANSISTORS FO R WIDEBAND A M P LIFIER S N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in

PZ1418B30U

Abstract: PZ1721B25U PZ2024B20U
Contextual Info: N AMER PHILIPS/DISCRETE DbE D • LbSBTBl DD1S137 3 ■ " PZ1418B30U PZ1721B25U PZ2024B20U J T - 3 3 - U MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in m ilitary and professional applications.

transistor M7A

Abstract: philips 33m PZ1418B30U PZ1721B25U PZ2024B20U epsilam 10
Contextual Info: PZ1418B30U PZ1721B25U JÌ P Z 2 0 2 4 B 2 0 U PHILIPS INTERNATIONAL SbE D • 711GÛ2b DCmb47fl ITH ■ PHIN MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS NPN transistors fo r use in common-base, ciass-B, broadband am plifiers under CW conditions in

epsilam

Abstract: PZ1721B12U PZ1418B15U PZ2024B10U 7Z92941
Contextual Info: ObE .D N AMER PHI LIPS /D ISCR ET E [^ 5 3 ^ 3 1 A □□ISIS? □ • PZ1418B15U PZ1721B12U PZ2024B10U MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS N-P-N transistors fo r use in common-base, class-B, wideband am plifiers under c.w. conditions in m ilita ry and professional applications and intended to drive PZ1418B30U/PZ1721B25U/PZ2024B20U

epsilam 10

Abstract: 5308-2CC M151 SD1893-03 epsilam cdi ic
Contextual Info: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS POUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE

5308-2CC

Abstract: 6 pin cdi epsilam 10 epsilam InMarSat power M151 SD1893-03 cdi ic
Contextual Info: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS P OUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE

12W92

Abstract: 4.25mhz s0151 25CC M105 SD1511-08 SD1511-8 sd1151 SD11511-8 12w 92
Contextual Info: M í ^Products M l l f f / v f j-im -i r - S f Jl P rog resa P o w ered b y T e c h no log y 140 Com merce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W TYPICAL CW 15W TYPICAL PULSED

5308-2CC

Abstract: M151 SD1893
Contextual Info: H m ; t^tPa n 'r-tSj-» «rar». S f It P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive n Montgomeryville, rPA 18936-1013 Tel: 215 631-9840 iiiu iH u u n ic i y v iiiu , A M A A A SD1893 RF & MICROWAVE TRANSISTORS MARISAT APPLICATIONS • FREQUENCY

Contextual Info: m mmPJ Prouvas M m ic r o s e m i 140 Commerce Drive Montgomeryviile, PA 18936-1013 Tel: <215> 631-9840 SD1868 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FR E Q U EN C Y 1.6-1 ,£5GHi PO W ER OU'!' 30W PO W ER GAIN S.7uB 28 0V V O L 'A G t

44w TRANSISTOR

Abstract: BV 1351 24V epsilam 10 mb 8936 M147 TCC1417-25 sd1066 1029f 1417-25
Contextual Info: H * : I f/ lv f T»j-m ! fII P ro g re s s P o w e re d b y T ec h no log y "*4 Commerce Drive Montgom ery ville, PA 18936-1013. Tel: 215 631-9840 TC C 1417-25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4 1.7GHz POWER OUT

SD1891

Abstract: baw 92 S98S MIS1 5308-2CC ATC100 M151
Contextual Info: m m m RF Products M m ic r o s e m i P ro g re s s P o w e re d b y T ec h no log y 140 Com merce Drive Montgomery ville, PA 18936-1013 Tel: 215 631-9840 SD1891 RF & MICROWAVE TRANSISTORS MARISAT APPLICATIONS FREQUENCY I.65GHz POWER OUT 3.0W POWER GAIN I I ,5dB

SD1887

Abstract: transistor 2Fn M147 TCC2023-16
Contextual Info: H M «-» J IV II C r O S e m i Progress Powered by Technology 140 Commerce Drive M ontgom eryville, PA 1 8936-1013. Tel: 215 631-9840 T C C 20 2 3 -1 6 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 2.0-2.3GHz POWER OUT 16.0W

Contextual Info: SGS-THOMSON S D 1 8 9 3 -0 3 It L I C T G » RF & MICROW AVE TR AN SISTO RS 1.6 GHZ SATCOM APPLIC ATIO N S . 1.65 GHz • 28 VOLTS . OVERLAY DIE GEOMETRY . GOLD METALLIZATION * HIGH RELIABILITY AND RUGGEDNESS ■ P o u t = 10 W MIN. WITH 11.0 dB GAIN . COMMON BASE

Contextual Info: / = 7 S G S - T H O M S O N SD1542 ^ 7 / . M Œ m iIêTM M IKêS RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS . 600 WATTS typ. IFF 1030/1090 MHz . 550 WATTS (min.) DME 1025 - 1150 MHz • 5.6 dB MIN. GAIN

RX1214B170W

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEA TU R ES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK R E F E R E N C E DATA

epsilam

Abstract: PZ1418B15U PZ1721B12U PZ2024B10U
Contextual Info: JI _ - PHILIPS PZ1418B15U PZ1721B12U PZ2024B10U SbE J> INTERNATIONAL • 7110flEb OOMbMbfl E55 ■ P H I N MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS T ^ ^ 3 -O S NPN transistors for use in common-base, class-B, wideband amplifiers under CW conditions in military

MX1011B200Y

Abstract: SC15 transistor list
Contextual Info: Philips Semiconductors Product specification Microwave power transistor MX1011B200Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, 10% duty factor Microwave performance up to T mb = 25 °C in a common base class C

PZ1418B30U

Abstract: PZ1721B25U PZ2024B20U SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U;

40511

Abstract: SD1501 400MS l band radar
Contextual Info: H ftm'nanr-*s*-*rt j-»-»S 140Commerce Drive Ifl/C ii f M i i iontgom u m y u i i iery c i y ville, v i i i c , PA r n 18936-1013 Tel: 215 631-9840 W "l-4 r A 4 S U I 50 1 P ro g re s s P o w e re d b y T e c h no log y RF & MICROWAVE TRANSISTORS L BAND RADAR APPLICATIONS

MF1011B900Y

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C

HUGHES mcw 550

Abstract: discharge capacitor welding hughes welder welder hughes mcw 550 hughes capacitor discharge welder mcw-550 VTA90 welding "application note" MAXY90
Contextual Info: Beam Lead Device Bonding to Soft Substrates Application Note 993 Introduction The hard gold surface on standard PC boards combined with soft substrate materials makes it almost impossible to successfully bond beam lead devices onto the boards with normally recommended

HUGHES mcw 550

Abstract: hughes welder mcw-550 hughes capacitor discharge welder VTA90 discharge capacitor welding welder hughes mcw 550 HUGHES tungsten electrodes MAXY90
Contextual Info: Beam Lead Device Bonding to Soft Substrates Application Note 993 Introduction The hard gold surface on standard PC boards combined with soft substrate materials makes it almost impossible to successfully bond beam lead devices onto the boards with normally recommended thermocompression