EPSILAM 10 Search Results

Contextual Info: N AtlER P H I L I P S / DI S C R E T E ObE.D • bb53^31 U □□ISIS? □ ■ PZ1418B15U PZ1721B12U P Z2024B 10U l 77- 3 3 ' 0 7 M ICRO W AVE POWER TR AN SISTO RS FOR BR O AD BAN D A M P LIFIE R S N-P-N transistors for use in common-base, class-B, wideband amplifiers under c.w. conditions in

Contextual Info: j N AMER P H I L I P S / D I S C R E T E DbE D • 0015137 J 3 ■ PZ1418B30U PZ1721B25U lPZ2024B20U T - 33 ''ll MICROWAVE POW ER TRANSISTORS FO R WIDEBAND A M P LIFIER S N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in

transistor M7A

Abstract: philips 33m PZ1418B30U PZ1721B25U PZ2024B20U epsilam 10
Contextual Info: PZ1418B30U PZ1721B25U JÌ P Z 2 0 2 4 B 2 0 U PHILIPS INTERNATIONAL SbE D • 711GÛ2b DCmb47fl ITH ■ PHIN MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS NPN transistors fo r use in common-base, ciass-B, broadband am plifiers under CW conditions in

epsilam 10

Abstract: 5308-2CC M151 SD1893-03 epsilam cdi ic
Contextual Info: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS POUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE

Contextual Info: SGS-THOMSON S D 1 8 9 3 -0 3 It L I C T G » RF & MICROW AVE TR AN SISTO RS 1.6 GHZ SATCOM APPLIC ATIO N S . 1.65 GHz • 28 VOLTS . OVERLAY DIE GEOMETRY . GOLD METALLIZATION * HIGH RELIABILITY AND RUGGEDNESS ■ P o u t = 10 W MIN. WITH 11.0 dB GAIN . COMMON BASE

Contextual Info: / = 7 S G S - T H O M S O N SD1542 ^ 7 / . M Œ m iIêTM M IKêS RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS . 600 WATTS typ. IFF 1030/1090 MHz . 550 WATTS (min.) DME 1025 - 1150 MHz • 5.6 dB MIN. GAIN

epsilam

Abstract: PZ1418B15U PZ1721B12U PZ2024B10U
Contextual Info: JI _ - PHILIPS PZ1418B15U PZ1721B12U PZ2024B10U SbE J> INTERNATIONAL • 7110flEb OOMbMbfl E55 ■ P H I N MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS T ^ ^ 3 -O S NPN transistors for use in common-base, class-B, wideband amplifiers under CW conditions in military

PZ1418B30U

Abstract: PZ1721B25U PZ2024B20U SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U;

SD1423

Abstract: SD1424
Contextual Info: SD1424 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . . 800 - 900 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION POUT = 30 W MIN. WITH 7.5 dB GAIN .250 x .320 4LFL M156 epoxy sealed

ATC100

Abstract: M151 SD1891-03
Contextual Info: SD1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS GOLD METALLIZED SYSTEM POLYSILICON SITE BALLASTING OVERLAY DIE GEOMETRY HIGH RELIABILITY AND RUGGEDNESS P OUT = 5.0 W MIN. WITH 14.0 dB GAIN .230 2LFL M151 hermetically sealed

RF NPN POWER TRANSISTOR 3 GHZ

Abstract: ATC100 M151 SD1891-03
Contextual Info: SD1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS GOLD METALLIZED SYSTEM POLYSILICON SITE BALLASTING OVERLAY DIE GEOMETRY HIGH RELIABILITY AND RUGGEDNESS POUT = 5.0 W MIN. WITH 14.0 dB GAIN .230 2LFL M151 hermetically sealed

SD1899

Contextual Info: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION

Contextual Info: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C

Contextual Info: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

Contextual Info: N AMER PHILIPS/DISCRETE PULSED M ICROW AVE POW ER TR A N S IS TO R NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications. Features • Interdigitated structure; giving a high emitter efficiency

Contextual Info: /IT SGS-THOMSON ^ 7 OifflO Mi[LI gTr^ ROD©i SD1899 RF & MICROWAVE TR AN SISTO RS SATELLITE C O M M U N IC ATIO N S APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EFFICIENCY - 50% TYPICAL - P o u t = 30 W MIN. WITH 9.3 dB GAIN PIN CONNECTION 1 DESCRIPTION

Contextual Info: N AMER PHILIPS/DISCRETE X7 DbE D b b S B ' m aoisaii o RZ1214B35Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

RX1214B150W

Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

Contextual Info: • N AMER PHILIPS/DISCRETE □bE D ■ bbS3T31 D01S1S3 1 ■ PZB16035U _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A r-3 3 -u % MICROWAVE POWER TRANSISTORS N-P-N transistor fo r use in common-base, class-B, am plifier under c.w. conditions in m ilita ry and professional applications up to 1,6 GHz.

Contextual Info: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.

Contextual Info: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.

Contextual Info: N AMER PHILIPS/DISCRETE DbE D ttiS3T31 D01SQ31 1 • LZ1418E100R T -3 S -U M IC R O W AVE LIN EAR POW ER TR AN SISTO R N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 1,4 GHz to 1,8 GHz in c.w. conditions in m ilitary and professional applications.

Contextual Info: N AMER P H I L I P S / D I S C R E T E OLE D bbSBTBl OOISIST 2 DtV tLU H M tN I UAIA PZB16040U T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. y v r - 3 3 - H M ICRO W AVE POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

Contextual Info: N AMER P H I L I P S / D I S CR E T E DhE D m bt,53T31 □015323 7 • RZ1214B125Y r -3 3 - P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.