EPROM D 2716 D Search Results

intel 2716

Abstract: 2716 EPROM 24 PINS LM6417E eprom 2716 LM6402H LM6402 2716 2k eprom LM6416E LM6416 LM8416
Contextual Info: L M 6 4 P G 9 9 ,9 8 ,9 7 No. 1248 CHIPS FOR EVALUATING N MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LM6400 SERIES SYSTEM SA N Y O 1. General Description The LM64PG99/98/99 are system evaluation chips Intended for application development tools of 4-blt ilngle-chip

eprom 2716

Abstract: 2716 JL 2716 eprom mcm2716 motorola 2716 3A11 MCM68A316E MMD6150 MMD7000 623A
Contextual Info: M O T O R O L A 2048 x 8-BIT UV ERASABLE PROM MOS N -C H A N N E L, S ILIC O N -G A TE The M CM 2716 is a 16,384-bit Erasable and Electrically Reprogram ­ m able PR OM designed fo r system deb ug usage and s im ilar a pp iica tions requiring non vo la tile m em o ry th a t c o u ld be reprogram m ed periodically.

LC6502

Abstract: LC6505C CSB400P LC6502B LC6500 2716 TI eprom LC6599 LC65PG99 KBR-400B eprom 2532
Contextual Info: No. 1247 LC65PG99 I I CHIP FOR EVALUATING C MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LC6500 SERIES S AN VO 1. General Description The LC65PG99 is a simulation chip intended for use in evaluating C MOS 4-bit single-chip microcomputer LC6500 series. With a 24-pin socket for program EPROM provided on the package surface, it is designed to facilitate the develop­

2316 rom

Abstract: 2516 2k eprom 2316 8 bit rom memory rom 2316 2316 EPROM TA-350 ground eeprom 2716 2716 eeprom 27C58 ROM 2316
Contextual Info: MV23SC16 _ ADVANCE INFORMATION P .M T K Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have ‘pre-production’ status. Details given may, therefore, change without notice although we would expect this performance data to

2316 rom

Abstract: eprom 2716 2816 eeprom rom 2716 2816 rom memory EPROM 2708 2708 eprom 2716 eeprom eeprom 2716 2316 EPROM
Contextual Info: MV23SC16 ADVANCEINFORMATIONC M O S A dvance in fo rm a tio n is is s u e d to a d vise C u s to m e rs o f new a d d itio n s to th e P le ssey S e m ic o n d u c to rs range w h ic h , n e ve rth e le ss, s t ill have ‘p re -p ro d u c tio n ’ s ta tu s . D e ta ils g ive n m ay, th e re fo re , ch a n g e w ith o u t n o tic e a lth o u g h w e w o u ld e xp e c t th is p e rfo rm a n c e d a ta to

nec 2716 eprom

Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
Contextual Info: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply

rom 2716

Abstract: eprom 2716 memory 2716 2716 ROM intel 8085 2716s 2716 2716 eprom intel 2716 eprom 2716A
Contextual Info: in te i 16K 2K X m 12716 8 UV ERASABLE PROM INDUSTRIAL Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse Fast Access Time: 450 ns Max • Industrial Grade Temperature Range: - 4 0 8C t o + 8 5 ° C ■ Single + 5V Power Supply

2716A EPROM

Abstract: 2716A eprom 2716a
Contextual Info: SGS-THOMSON *7#. G NMOS 16K 2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525 mW Max ACTIVE POWER, 132 mW Max STANDBY POWER ■ ACC ESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS AND O U TPU TS TTL COMPATIBLE

SDA3010

Abstract: 2716 EPROM 3403AC
Contextual Info: Application-Oriented Single-Chip Microcomputer SDA3010 MOS IC Type Ordering code Package SDA 3010 Q 67120-C 86 Piggyback 40/24 pins SDA 3010 SDA 2010 - ROM-less Features • 8-bit CPU, RAM, I/O in piggyback package with 40/24 pins • Four analog outputs with 6 bit resolution

DMX single chip controller

Abstract: DMX chip 1A60 2SJ 49c 27C64 143C 144F 27C16 lcd 162b rom 2716
Contextual Info: DATA SHEET Auto Display Recognition Serial Interface Up To 256 Stored Messages Parallel Interface Low Power Single +5V Supply DMX C3 This data sheet is to be used in conjunction with module data sheet. The DMX C3 completes the interface between a character or graphic display and the user's system.

GR2732

Abstract: IC 2732 ROM 2764 GREENWICH INSTRUMENTS USA 2732 rom 4K GR2716 GR2764 ROM 2764 2732 eprom
Contextual Info: G R E E N W IC H IN S T R U M E N T S LT» 4 tE 412477*4 0 0 0 0 0 0 4 D SYMBOL MIN -0.3 -0.3 -1 0 Vdd V i/0 Temp. MAX UNIT 7.0 Vdd + 0.3 + 60 Volts Volts deg. C OPERATING CONDITIONS SYMBOL Vdd Vin 1 V in ( 0 ) lin (any pin)* V o u tO ) ( lo u t = _ 1 V o u t( 0 ) ( lo u t

2764 memory

Abstract: 2732A-2 2732A-20 27C128 27C256 27C512 27C64 87C64 LD2732A TD2732A
Contextual Info: 2732A 32K 4K x 8 UV ERASABLE PROMS 200 ns (2732A-2) Maximum Access Time . . . HMOS*-E Technology Low Current Requirement - 1 0 0 mA Active - 35 mA Standby inteligent I d e n t i f i e r T M Mode -A utom atic Programming Operation Compatible with High-Speed

intel 2716 eprom

Abstract: HN48016 eprom 2716 ER5716 ER5716HR ER5716IR B 2716 D EEPROM intel "General Instrument"
Contextual Info: ER5716 ER5716IR ER5716HR .1 NE KAI I NSI Kl ¡Mí N'T PRELIMINARY INFORMATION 16K N-Channel Electrically Erasable and Programmable ROM FEATURES ELEC. ALTER AB LE NON-VOLATILE MEMORY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2048 w ord x 8 bit orga n izatio n , fu lly decoded

N27C128

Abstract: N27C128-200V05 27C128 INTEL 27c128 290127 27c128a
Contextual Info: INTEL CORP flEMORY/LOGIC SOE ]> • 4ö2bl7b 00fcjfci735 0 intel 27C 128 ~ r~ v z ~ / 3 ~ e s 1 2 8 K ( 1 6 K x 8 ) C H M O S P R O D U C T IO N A N D U V E R A S A B LE P R O M s ■ CHMOS Microcontroller and Microprocessor Compatible ■ High Performance

intel 27c512 eprom

Abstract: 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2
Contextual Info: INTEL CORP MEMORY/LOGIC 50E D • 4fl2hl7b GObböOH *4 ■ In te l' T -V L -lS -tS 27C512 *T“-V6-/3 -29 512K (64K x 8) CHMOS PRODUCTION AND UV ERASABLE PROMS ■ Software Carrier Capability ■ 120 ns Access Time ■ Two-Line Control ■ Inteligent identifier Mode

Contextual Info: 79970^76 SANYO SEMICONDUCTOR CORP SANY0 SEMICONMJCTOR CORP 7b 76C 0 1 9 2 6 » Ë J 7eH7G7b DDDnBt 7 | ~j ^V3- 2/ LC3517 204B o j - c-m os LSI C IR C U IT D R A W IN G N o .4 D 0 5 W O R D S X B B IT S C M O S S T A T IC R A M 30.11A The LC3517 is an unclocked high-speed static RAM that is organized as 2048 words x 8 bits and operates

6716

Abstract: ic 2716 eprom 2716 2k eprom HM-6716 2k x 8 EPROM harris QC02 eprom 2716 HM-6758 harris eprom harris hm-6716
Contextual Info: HARRIS U li HM-6716 SEM ICO N D U CTO R P R O D U C T S DIVISION A DIVISION OF HARRIS CORPORATION 2K x 8 C M O S U V E P R O M Preview Pinout Features TO P V IE W SUPER LOW POW ER S T A N D B Y 5 0 0 /iW M A X . IN D U S T R Y S T A N D A R D P IN O U T 1

Contextual Info: NMC27C512AN 524,288-Bit 64k x 8 One Time Programmable CMOS PROM General Description Features The NMC27C512AN is a high-speed 512k UV one time pro­ grammable CMOS EPROM, ideally suited for applications where fast turnaround and low power consumption are im­

00FF

Abstract: DSP56005 LS09 MBD301 MC68000
Contextual Info: Design Considerations Heat Dissipation Design Considerations outside ambient ΘCA . These terms are related by the equation: Heat Dissipation The average chip junction temperature, TJ, in °C, can be obtained from: TJ = TA + (PD x ΘJA) (1) Where: TA = ambient temperature, °C

am9218

Abstract: 2316a intel 2316a rom 2316a
Contextual Info: AMI S6831A/B Features General Description □ Single +5V Power Supply □ Directly TTL Compatible Inputs □ Three-State T T L Compatible Outputs □ Three Programmable Enables The AMI 6831 family of 16,384 bit mask program­ mable Read-Only-Memories offers fully static opera­

pin diagram of ic 27128

Abstract: 27c32b C27C32B
Contextual Info: SEMICONDUCTOR TM NMC27C32B 32,768-Bit 4096 x 8 CMOS EPROM General Description Features T he N M C 2 7 C 3 2B is a 3 2 k UV e ra sa b le and e le c tric a lly reprogram m able CM OS EPROM, ideally suited for applications w here fast turnaround, pattern experim entation and low power

Contextual Info: NMC27C128BN 3 National Sem iconductor PRELIMINARY NMC27C128BN High Speed Version 131,072-Bit 16k x 8 One Time Programmable CM O S PROM G eneral D e scrip tio n Features The NMC27C128BN is a high-speed 128k one time pro­ grammable CMOS PROM, ideally suited for applications

3516D

Contextual Info: SANYO SEMICONDUCTOR CORP 7b DeT| VTTVDTb QGDI TES LC351 6 c -m o s LSI 5 Vè-/£-/3 CIRCUIT OfRAWITslfS N0.4D04 2 0 4 8 WORDS XB BITS CMOS STATIC RAM 301 ÎA The LC3516 is an und o cke d high-speed static CMOS static RAM th a t is organized as 2048 words x 8 bits

27c32

Abstract: EPROM 27C32 27c32 eprom eprom 27C16 27C16* block diagram 27C128 27C256 27C512 27C64 NMC27C1023QE120
Contextual Info: NMC27C1023 yjFJk National fâ /M Semiconductor M Æ Corporation ADVANCED INFORMATION NMC27C1023 1,048,576-Bit 128k x 8 UV Erasable CMOS PROM General Description Features The N M C27C1023 is a high-speed 1024k UV erasable and electrically reprogram m able CM OS EPROM, ideally suited